514256a
Abstract: MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80
Text: i O rder this docum ent by M CM 514256A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The 514256A is a 1,0|x CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS
|
OCR Scan
|
14256A/D
256Kx4
MCM514256A
300-mil
100-mil
A23028-2
14256A
51L4256A
514256a
MCM514256AZ10
MCM514256AP70
MCM514256APC80
MCM514256A-10
514256A-70
MCM51L4256A-70
MCM514256A-80
MCM514256AJ80
MCM514256AZ80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 524,288 W O R D S x 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTIO N T he TH M 325120BS/BSC/AS/ASG is a 524,288 words by 32 b its dynam ic RAM m odule w hich assem bled 16 pcs of T C 514256A J/B J on the p rin te d circu it board. T hese m odules can be as w ell used
|
OCR Scan
|
325120BS/BSC/AS/ASG
14256A
B-248
THM325120BS-60,
THM325120AS-70,
THM325120BSG-60,
THM325120ASG-70,
B-249
|
PDF
|
m514256a
Abstract: No abstract text available
Text: 514256A/AL Series 262,144-Word x 4-Bit CM O S Dynamic RAM • DESCRIPTION 514256A/ALP Series The Hitachi HM 514256A/AL is a C M O S dynamic RAM organized 262,144-word x 4-bit. HM 514256A/AL has realized higher density, higher performance and various functions by employing 1.3 jj.m C M O S technology and some new C M O S circuit de
|
OCR Scan
|
HM514256A/AL
144-Word
HM514256A/ALP
14256A/AL
20-pin
m514256a
|
PDF
|
m514256
Abstract: M514256A MCM514256AP70 M514256A-80 MCM514256AP80 MCM514256AJ70 M514 MCM514256AJ70R2 M51425 L42S
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256K x 4 Bit CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The M C M 514256A is a 1 .0 ^ CM OS high-speed dynam ic random access memory. It is organized as 262,144 four-bit w ords and fabricated w ith C M OS silicon-gate pro
|
OCR Scan
|
14256A
40514256AJ70R2
MCM514256AJ80R2
MCM51L4256AJ70R2
MCM51L4256AJ80R2
MCM514256AZ70
MCM514256AZ80
MCM51L4256AZ70
MCM51L4256AZ80
m514256
M514256A
MCM514256AP70
M514256A-80
MCM514256AP80
MCM514256AJ70
M514
MCM514256AJ70R2
M51425
L42S
|
PDF
|
514256
Abstract: 514256A
Text: SEMICONDUCTOR TECHNICAL DATA MCM94256 256K x 9 Bit Dynamic Random Access Memory Module The M CM 94256 is a 2.25M dynam ic random access m em ory DRAM module organized as 262,144 x 9 bits. The module is a 30-lead single-in-line m em ory module (SIM M) consisting of tw o M C M 514256A DRAMs housed in 20/26 J-lead
|
OCR Scan
|
MCM94256
30-lead
14256A
18-lead
MCM94256S70
MCM94256S80
514256
514256A
|
PDF
|
514256A
Abstract: l 7251 3.1
Text: nOTOROLA M SC { N E M O R Y / A S I bSE D • b 3 b ? 5 S l 00flT203 325 M O T O R O LA 514256A Advance Information Commercial Plus and Mil/Aero Applications 256K x 4 CMOS Dynamic RAM Page Mode E L E C TR IC A LLY T E S T E D PER: M P G 514256A The 514256A is a 1.0^ CMOS high-speed, dynamic random access memory.
|
OCR Scan
|
00flT203
14256A
514256A
l 7251 3.1
|
PDF
|
MCM514256A-10
Abstract: MCM514256AP10 MCM514256AJ80 MCM514256AZ80 MCM514256AJ70 CM514256 MCM51L4256A-80 M514256A MCM514256AJ10 MCM51L4256
Text: MOTOROLA SEM ICO ND U C TO R TECHNICAL DATA 514256A MCM51L4256A Advance Information 2 5 6 K X 4 CMOS Dynamic RAM P PACKAGE PLASTIC CASE 738A T h e M C M 514256A is a 1.2p C M O S high-speed, d y n a m ic random access m e m o ry. It is organized as 262,144 fo u r-b it w o rd s a n d fa b ric a te d w ith C M O S silic o n -g a te process te c h
|
OCR Scan
|
MCM514256A
MCM51L4256A
14256A
300-m
Numbers-MCM514256AP70
MCM5142S6AP80
MCM514256AP10
MCM514256A-10
MCM514256AJ80
MCM514256AZ80
MCM514256AJ70
CM514256
MCM51L4256A-80
M514256A
MCM514256AJ10
MCM51L4256
|
PDF
|
514256
Abstract: 514256A
Text: SEMICONDUCTOR TECHNICAL DATA MCM36512 512K x 36 Bit Dynamic Random Access Memory Module The M CM 36512 is an 18M dynam ic random access m em ory DRAM module organized as 524,288 x 36 bits. The module is a 72-lead double-sided single-in-line m em ory module (SIMM) consisting of sixteen M C M 514256A DRAMs housed in 20/26
|
OCR Scan
|
MCM36512
72-lead
14256A
18-lead
MCM36512S70
MCM36512S80
MCM36512SG70
MCM36512SG80
514256
514256A
|
PDF
|
514256A
Abstract: 514256a-10 TCWP HM514256AP
Text: H M 5 1 4 2 5 6 A P I / A J P I / A Z P I - 6 / 7 / 8 / 1 0 / 1 2 — P relim inary Extended Temperature Range Version 262.144-Word x 4-Bit Dynam ic Random Access Memory • DESCRIPTION Th e Hitachi H M 514256A is a C M O S dynam ic RAM organized 262.144-word x 4-bit. H M 514256A has realized higher density,
|
OCR Scan
|
144-Word
14256A
20-pin
HM514256API/AJPI/AZPI-6/7/8/10/12
514256A
514256a-10
TCWP
HM514256AP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSC2330A-XXYS4/KS4_ 524 ,28 8 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e O ki M S C 2 3 3 0 A -x x Y S 4 /K S 4 is a fully decoded, 5 2 4 ,2 8 8 word x 8 bit C M O S dynam ic random access m emory com posed of four 1Mb D R A M s in SOJ M SM 514256A JS . T h e m ounting of four SOJs
|
OCR Scan
|
MSC2330A-XXYS4/KS4_
14256A
30pin
MSC2330A-xxYS4/KS4
//n///T7777X
|
PDF
|
m514256
Abstract: M514256A 514256A
Text: 514256A/AL Series 262,144-Word x 4-Bit C M O S Dynamic RAM • DESCRIPTION HM 514256A /A LP Series The Hitachi H M 514256A/AL is a C M O S dynamic R A M organized 262,144-word x 4-bit. H M 514256A/AL has realized higher density, higher performance and various
|
OCR Scan
|
HM514256A/AL
144-Word
14256A/AL
20-pin
m514256
M514256A
514256A
|
PDF
|
MSM514256
Abstract: msm514256a MSM514256A-70
Text: 4tE OKI D • b724240 O K I 0D0RS4Ô M^T H O K I J SEMICONDUCTOR GROUP semiconductor 514256A_ J - '2-3-17 262 ,14 4 -WORD x 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The M S M 514256A isanew generation dynam ic RAM organized as 262,144 words by 4 bits. The technology
|
OCR Scan
|
b724240
000R54Ã
MSM514256A
144-WORD
MSM514256Aisanew
MSM514256A-70
140ns
MSM514256A-8A/80
160ns
MSM514256
|
PDF
|
HYB514256A
Abstract: No abstract text available
Text: SIEMENS HYB 514256AL-60/-70 256K x 4-Bit Dynamic RAM Low Power Version Advance Information • 262 144 x 4-bit organization • Fast access and cycle lim e 60 ns access tim e 110 ns cycle tim e (HYB 514256AL-60) 70 ns access tim e 130 ns cycle tim e (HYB 514256AL-70)
|
OCR Scan
|
514256AL-60/-70
514256AL-60)
514256AL-70)
cycles/64
514256AL
P-DIP-20-T
20A20DIN41870
P-ZIP-20/19
HYB514256A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' 514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The 514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the 514256A is OKI’s CMOS silicon gate process technology.
|
OCR Scan
|
b72M2MD
MSM514256A
144-WORD
MSM514256A
|
PDF
|
|
|
514256A
Abstract: MCM32256AS70
Text: MU1UHULA • SEMICONDUCTOR TECHNICAL DATA MCM32256 MCM32L256 256K x 32 Bit Dynamic Random Access Memory Module T he M CM 32256 is an 8M dynam ic random access mem ory DRAM module organized as 262,144 x 32 bits. The module is a 72-lead single-in-line mem ory
|
OCR Scan
|
72-lead
14256A
MCM32256AS70
MCM32256AS80
32L256
MCM32256ASG70
MCM32256ASG80
MCM32L256AS70
MCM32L256ASG70
514256A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 256K X 36-Bit Dynamic RAM Module HYM 362500S-80 Advanced Information • 262 144 words by 36-bit organization • Fast access and cycle time 80 ns access time 150 ns cycle time • Fast page mode capability with 55 ns cycle time • Single + 5 V ± 10 % supply
|
OCR Scan
|
36-Bit
362500S-80
L-SIM-72-1000)
362500S-80
256Kx
36-Bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSC2331 A-XX YS3/KS3 262, 144 BY 9 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC2331 A-XX Y S 3 /K S 3 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 9 bit CMOS dynam ic random access m em ory composed of tw o 1 M b DRAMs in SOJ M S M 5 1 4 2 5 6A JS and one 256Kb DRAM in
|
OCR Scan
|
MSC2331
SC2331
256Kb
256JS)
14256A
|
PDF
|
rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
|
OCR Scan
|
|
PDF
|
4256A
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The 514256A is a 1.0^ CMOS high-speed, dynam ic random access memory. II is organized as 262,144 tour-bit words and fabricated with CMOS silicon-gate process
|
OCR Scan
|
256Kx4
MCM514256A
300-mil
100-mil
4256A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM EN S 512K X 36-Bit Dynamic RAM Module HYM 365120S-80 Advanced Information • 524 288 words by 36-bit organization • Fast access and cycle time 80 ns access time 150 ns cycle time • Fast page mode capability with 55 ns cycle time • Single + 5 V ± 10 % supply
|
OCR Scan
|
36-Bit
365120S-80
L-SIM-72-1000)
512Kx
36-Bit
|
PDF
|
514256ALP
Abstract: HM514256A hm514256 HM514256ALP-8
Text: 514256ALP/ALJP/ALZP-8/10/12 — Preliminary 262,144-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi 514256ALP/AUP/ALZP family is a CMOS dy namic RAM organized 262,144-word x 4-bit. 514256ALP/AUP/ ALZP has realized higher density, higher performance and various
|
OCR Scan
|
HM514256ALP/ALJP/ALZP-8/10/12
144-Word
HM514256ALP/AUP/ALZP
HM514256ALP/AUP/
HM514256ALP/ALJP/ALZP
20-pin
514256ALP
HM514256A
hm514256
HM514256ALP-8
|
PDF
|
514256a
Abstract: L1AA MCM514256 MCM51L4256
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit CMOS Dynamic RAM 514256A MCM51L4256A Page Mode, Commercial and Industrial Temperature Range T h e M C M 5 1 4 2 5 6 A is a 1 .On C M O S h ig h -s p e e d d y n a m ic ra n d o m a c c e s s m e m o ry .
|
OCR Scan
|
CM514256A«
CM51L4256A
14256A
51L4256A
514256AJ70
514256AJ80
51L4256AJ70
51L4256AJ80
514256AJ70R
514256AJ80R2
514256a
L1AA
MCM514256
MCM51L4256
|
PDF
|
mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
|
OCR Scan
|
A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
|
PDF
|
MCM514256A-80
Abstract: 514256a MCM514256A-70 MCM514256 MCM51L4256A-80 5Bp power control MCM51L4256A-70 MCM514256AJ70 MCM514256AJ80 514256
Text: MOTOROLA Order this document by 514256A/D SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit CMOS Dynamic RAM 514256A MCM51L4256A Page Mode, Commercial and Industrial Temperature Range The 514256A is a 1.0µ CMOS high-speed dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS silicon-gate process technology. Advanced circuit design and fine line processing provide high
|
Original
|
MCM514256A/D
MCM514256A
MCM51L4256A
MCM514256A
MCM514256A/D*
MCM514256A-80
514256a
MCM514256A-70
MCM514256
MCM51L4256A-80
5Bp power control
MCM51L4256A-70
MCM514256AJ70
MCM514256AJ80
514256
|
PDF
|
