B72M2MD Search Results
B72M2MD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology. |
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b72M2MD MSM514256A 144-WORD MSM514256A | |
514256a-10
Abstract: 514256 514256A 514256A-70 MSM514256A-70 TWC-S5
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24e40 MSM514256A_ 144-WORD MSM514256A lllll/11/lllllllllllh 514256a-10 514256 514256A 514256A-70 MSM514256A-70 TWC-S5 | |
ECHO canceller IC
Abstract: acoustic ECHO cancel ic SM7704 7603B1
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E2U0051-16-Y3 MSM7603B MSM7603B MSM7602. b72M2MD D0EMS75 ECHO canceller IC acoustic ECHO cancel ic SM7704 7603B1 | |
PWM dimming circuit
Abstract: analog dimming circuit KEYSCAN 12bit shift register keypad 3x4 resistor temprature detector circuit diagram for automatic voltage regulator TZ pwm ic generator oki Vacuum Fluorescent Display
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ELt240 MSC1206-XX 34-bit MSC1206-XX 1206-XX 34bit 12bit 36bit PWM dimming circuit analog dimming circuit KEYSCAN 12bit shift register keypad 3x4 resistor temprature detector circuit diagram for automatic voltage regulator TZ pwm ic generator oki Vacuum Fluorescent Display | |
oki m6688
Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
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MSM6688 MSM6688 MSM6791 M6688 XXX-96Q9INSIAI XXX-96S9IAISIAI b72424D oki m6688 M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 | |
Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power |
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MSM5116170 576-Word 16-Bit MSM5116170 42-pin 50/44-pin | |
Contextual Info: O K I Semiconductor MSC23137C-XXBS9/DS9 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23137C-xxBS9/DS9 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs 1M x 4 in SOJ packages |
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MSC23137C-XXBS9/DS9 576-Word 36-Bit MSC23137C-xxBS9/DS9 72-pin MSC23137C-xxBS9 | |
Contextual Info: O K I Semiconductor MSC23232C/C L-xxBS 16/DS16 2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23232C/CL-xxBS16/DS16 is a fully decoded 2,097,152-word x 32-bit CMOS Dynamic Random Access Memory Module composed of sixteen 4-Mb DRAMs 1M x 4 in SOJ |
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MSC23232C/C 16/DS16 152-Word 32-Bit MSC23232C/CL-xxBS16/DS16 72-pin | |
Contextual Info: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5116400 is OKI's CMOS silicon gate process technology. |
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304-Word MSM5116400 cycles/64m QG1733S MSM5116400 GG1733b | |
RC5 IR-E
Abstract: MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM
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242i4Q -zs-ts-MSM514100 304-Word MSM514100 MSIVT514100 26-pin 20-pin 18-pin RC5 IR-E MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM | |
RE52
Abstract: CCA-5 MAS 10 RCD MSM514260 FKS3
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MSC23B33-xxBS4/DS4 288-Word 32-Bit MSC23B33-xxBS4/DS4 MSM514260) 72-pin RE52 CCA-5 MAS 10 RCD MSM514260 FKS3 | |
TSCC 1100
Abstract: SI03
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b75424o 001347b MSM514252 144-Word MSM514252 TSCC 1100 SI03 | |
Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and |
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MSM56V16400 152-Word MSM56V16400 cycles/64 DD2D377 | |
Contextual Info: O K I Semiconductor MSM51V18160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V18160A is |
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MSM51V18160A 576-Word 16-Bit MSM51V18160A 42-pin 50/44-pin | |
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sj 2025
Abstract: ic sj 2025 IC 2025 TMI 1480 digital thermometer secs Ishizuka Electronics lcd N7 Thermometer ic preset variable resistor DIGITAL ALARM CLOCK
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MSM5052-01 MSM5052-01 80-PIN QFP80-P-1420-K QFP84-P-1420-BK b724E4Q sj 2025 ic sj 2025 IC 2025 TMI 1480 digital thermometer secs Ishizuka Electronics lcd N7 Thermometer ic preset variable resistor DIGITAL ALARM CLOCK | |
Rain alarm
Abstract: FPB-04A fujikura 3c 2v lm1240 symbol oil pressure sensor M64167 0pp1 103AT-2 Ishizuka Electronics 7 segment display with alarm atmospheric pressure sensor circuit
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MSM64167-002 MSM64167-002 12-hour/24-hour 80-PIN QFP80-P-1420-K QFP84-P-1420-BK Rain alarm FPB-04A fujikura 3c 2v lm1240 symbol oil pressure sensor M64167 0pp1 103AT-2 Ishizuka Electronics 7 segment display with alarm atmospheric pressure sensor circuit | |
Contextual Info: O K I Semiconductor MSM51 V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6170 is a1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power |
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MSM51 V16170 576-Word 16-Bit MSM51VI6170 MSM51V16170 42-pin | |
MSM514402-10
Abstract: MSM514402-70 MSM514402-80
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MSM514402 576-Word MSM514402 26-pin 20-pin MSM514402â MSM514402-10 MSM514402-70 MSM514402-80 | |
Contextual Info: O K I Semiconductor M SC23C132C/CL-XXBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23C132C/CL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages |
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SC23C132C/CL-XXBS8 576-Word 32-Bit MSC23C132C/CL-xxBS8 72-pin MSC23C132C | |
Contextual Info: O K I Semiconductor MSM538021C 1,048,576-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM538021C is a high-speed silicon gate CMOS Mask ROM with 1,048,576-word x 8-bit capac ity. The MSM538021C operates on a single 5.0 V power supply and is TTL compatible. The chip's asyn |
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MSM538021C 576-Word MSM538021C b7242M0 | |
20-PIN
Abstract: 26-PIN ZIP20-P-400-W1
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MSM514400A/AL_ 576-Word MSM514400A/AL cycles/16ms, cycles/128ms MSM514400A/AL 20-PIN 26-PIN ZIP20-P-400-W1 | |
51V1616Contextual Info: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160 achieves high integration, high-speed operation, and low-power |
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MSM51 V16160 576-Word 16-Bit MSM51VI6160 MSM51V16160 42-pin 51V1616 | |
st p513
Abstract: 0040H MSM65513 MSM65P513
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b724240 0013flb3 MSM65513/65P513 MSM65513 nX-8/50 10MHz MSM65P513, b724240 st p513 0040H MSM65P513 |