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CUI Inc SDI90B-12-TCW-P51 AC-DC, 12 VDC, 7.50A, SW, C6 DES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SDI90B-12-TCW-P51	Box			504	1 - 10 - 100 - 1000 $54.9875 10000 $54.9875	Buy Now
Mouser Electronics	SDI90B-12-TCW-P51					1 - 10 - 100 - 1000 $55.81 10000 $55.81	Get Quote
Sager	SDI90B-12-TCW-P51				1	1 $73.32 10 $68.73 100 $62.84 1000 $62.84 10000 $62.84	Buy Now
CUI Inc SDI120B-19-TCW-P51 AC-DC, 19 VDC, 6.30 A, SW, C6 DE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SDI120B-19-TCW-P51	Box			3,000	1 - 10 - 100 - 1000 - 10000 $68.375	Buy Now
Mouser Electronics	SDI120B-19-TCW-P51					1 - 10 - 100 - 1000 - 10000 $69.39	Get Quote
Sager	SDI120B-19-TCW-P51				1	1 $91.17 10 $85.47 100 $78.14 1000 $78.14 10000 $78.14	Buy Now
CUI Inc SDI120B-48-TCW-P51 AC-DC, 48 VDC, 2.50 A, SW, C6 DE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SDI120B-48-TCW-P51	Box			3,000	1 - 10 - 100 - 1000 - 10000 $69.625	Buy Now
Mouser Electronics	SDI120B-48-TCW-P51					1 - 10 - 100 - 1000 - 10000 $70.66	Get Quote
Sager	SDI120B-48-TCW-P51				1	1 $92.83 10 $87.03 100 $79.57 1000 $79.57 10000 $79.57	Buy Now
CUI Inc SDI120B-15-TCW-P51 AC-DC, 15 VDC, 9 A, SW, C6 DESK-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SDI120B-15-TCW-P51	Box			3,000	1 - 10 - 100 - 1000 - 10000 $68.375	Buy Now
Mouser Electronics	SDI120B-15-TCW-P51					1 - 10 - 100 - 1000 - 10000 $69.39	Get Quote
Sager	SDI120B-15-TCW-P51				1	1 $91.17 10 $85.47 100 $78.14 1000 $78.14 10000 $78.14	Buy Now
CUI Inc SDI120B-12-TCW-P51 AC-DC, 12 VDC, 9 A, SW, C6 DESK-
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SDI120B-12-TCW-P51	Box			3,000	1 - 10 - 100 - 1000 - 10000 $58.3125	Buy Now
Mouser Electronics	SDI120B-12-TCW-P51					1 - 10 - 100 - 1000 - 10000 $61.65	Get Quote
Sager	SDI120B-12-TCW-P51				1	1 $77.75 10 $72.89 100 $66.64 1000 $66.64 10000 $66.64	Buy Now

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TCWP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
R5F61668RFPV Abstract: R5F61664RFPV R5F61668RN50FPV R5F61663RFPV A18E A1719 transistor NEC D 587 lsi tms 1951 nl 1117 3.3 DKC mark Text: REJ09B0412-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 H8SX/1668R Group, H8SX/1668M Group	Original	PDF	REJ09B0412-0200 H8SX/1668R H8SX/1668M 32-Bit H8SX/1600 H8SX/1668R H8SX/1664R H8SX/1663R H8SX/1668M H8SX/1664M R5F61668RFPV R5F61664RFPV R5F61668RN50FPV R5F61663RFPV A18E A1719 transistor NEC D 587 lsi tms 1951 nl 1117 3.3 DKC mark
LGA144 Abstract: XORB LGA-144 4435* mos A18E SR 2370R ic 555 block diagram 1041 p26 HD64F2378RVFQ marking 1052 Text: REJ09B0109-0600 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2378, H8S/2378R Group Hardware Manual	Original	PDF	REJ09B0109-0600 H8S/2378, H8S/2378R 16-Bit Family/H8S/2300 H8S/2378 H8S/2377 H8S/2375 H8S/2374 H8S/2373 LGA144 XORB LGA-144 4435* mos A18E SR 2370R ic 555 block diagram 1041 p26 HD64F2378RVFQ marking 1052
SMCS332 Abstract: ERC32 MG1140E TSC21020F TSC695E TSS901E Text: Features • 3 identical bidirectional link channels allowing full duplex communication under selectable transmit rate from 1.25 up to 200 Mbit/s in each direction • A COmmunication Memory Interface COMI provides autonomous accesses to a • • • •	Original	PDF	TSS901E TSS901E 4167C SMCS332 ERC32 MG1140E TSC21020F TSC695E
SMCS332 Abstract: 5962-01A1701QXC ERC32 C104 MG1140E TSC21020F TSC695E TSS901E W359 Text: Features • 3 identical bidirectional link channels allowing full duplex communication under selectable transmit rate from 1.25 up to 200 Mbit/s in each direction • A COmmunication Memory Interface COMI provides autonomous accesses to a • • • •	Original	PDF	TSS901E TSS901E SMCS332 5962-01A1701QXC ERC32 C104 MG1140E TSC21020F TSC695E W359
2377 HITACHI Abstract: smr630 mar 827 irf 846 Hitachi DSA00280 ERN 1385 OF946 Text: Hitachi 16 Bit Single-Chip Microcomputer H8S/2378, H8S/2378R Series H8S/2378 HD64F2377, HD6432375 H8S/2378R HD64F2377R, HD6432375R Hardware Manual ADE-602-260A Rev. 2.0 04/11/02 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s	Original	PDF	H8S/2378, H8S/2378R H8S/2378 HD64F2377, HD6432375 H8S/2378R HD64F2377R, HD6432375R ADE-602-260A H8S/2378 2377 HITACHI smr630 mar 827 irf 846 Hitachi DSA00280 ERN 1385 OF946
R5F61664 Abstract: 4435* mos Nippon capacitors Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	H8SX/1663Group REJ09B0294-0100 R5F61664 4435* mos Nippon capacitors
ERC32 Abstract: MG1140E SMCS332 TSC21020F TSC695E TSS901E memory arbitration scheme Text: Features • 3 identical bidirectional link channels allowing full duplex communication under selectable transmit rate from 1.25 up to 200 Mbit/s in each direction • A COmmunication Memory Interface COMI provides autonomous accesses to a • • • •	Original	PDF	TSS901E TSS901E 4167E ERC32 MG1140E SMCS332 TSC21020F TSC695E memory arbitration scheme
irf 539 Abstract: marking code H02 HFC8 Nippon capacitors Text: REJ09B0579-0100 16 H8S/2426Z Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2426Z R4F2426Z All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by	Original	PDF	REJ09B0579-0100 H8S/2426Z 16-Bit H8S/2400 H8S/2426Z R4F2426Z irf 539 marking code H02 HFC8 Nippon capacitors
Untitled Abstract: No abstract text available Text: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz	OCR Scan	PDF	M51C256H M51C256H-15 M51C256H-20 M51C256H
FC24P Abstract: TC64 Text: T C 2A3 S 5 J o •¡ M k a -e í í í í «, ■ A F flE # # !« * t . ffltX E S fft* # { 1 K M M E L U ■æ * s ï * f i Æ # , îfcs ¿ a E Æ m eft K »aW K S K «3S æ «», H Æ Ïtt lif t * ± . f ia i t r ä g t £ ^ TCÎiltTCMfc.- I ! Ti'MI1rc sa ft-	OCR Scan	PDF	FC24P TC24F= K34G-VOOtr TC64
Untitled Abstract: No abstract text available Text: FUJITSU IM MB85237-10 9 S CR AM MODULE X MB85237-12 TS029-A881 Jan. 1988 1,048,576 x 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The F u j i t s u MB85237 is a fully decoded, dynamic CMOS random access memory module with nine MB81C1002, in 26-pin SOJ p a c k a g e s , and nine .22yF decoupling capa	OCR Scan	PDF	MB85237-10 MB85237-12 TS029-A881 MB85237 MB81C1002, 26-pin 30-pin 30-pad MB85237
Untitled Abstract: No abstract text available Text: 4,194,304 WORD X 1 BIT'DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as	OCR Scan	PDF	TC514100JL/ZL TC514100J/Z. TC514100JLVZL-80 TC514100JL/ZL-10
TC51440ASJ Abstract: No abstract text available Text: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques	OCR Scan	PDF	TC514410ASJ-60/70/80 TC514410ASJ 300mil) TC5144100/ 512KX4 TC51440ASJ
Untitled Abstract: No abstract text available Text: HS-3273 ¡lì HARRIS CMOS Bus Interface Unit Mil-Std-1553 Protocol Bus Interface Circuit Features Pinout DIP • M il-Std-1553 Com patible • Up To 5M H z Data Rate For N on-M il-S td-1553 Applications • Parallel to Serial Transm itter Data Conversion TO P VIEW	OCR Scan	PDF	HS-3273 Mil-Std-1553 il-Std-1553 td-1553 I/012c

Untitled Abstract: No abstract text available Text: intei M2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM M IL IT A R Y M2118-4 120 270 320 Maximum Access Time ns Read, Write Cycle (ns) Read-Modify Cycle (ns) • Single +5V Supply, ±10% Tolerance M2118-7 150 320 410 ■ RAS Only Refresh ■ HMOS Technology ■ Low Power: 150 mW Max. Operating	OCR Scan	PDF	M2118 M2118-4 M2118-7
WO1M Abstract: Nippon capacitors Text: HB56H164EJ Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The	OCR Scan	PDF	HB56H164EJ 576-word 64-bit ADE-203-697A 16-Mbit HM5118165) 16-bit 74ABT16244) WO1M Nippon capacitors
Untitled Abstract: No abstract text available Text: TSS901E Intelligent and Flexible IEEE 1355 Communication Controller for Space Description and Applications The TSS901E provides an interface between a DataStrobe link - according to the IEEE Std 1355-1995 specification carrying a simple interprocessor communication protocol - and a data processing node	OCR Scan	PDF	TSS901E TSS901E S901E SCC9000
MQ4A Abstract: um227 NLMQ4 Text: KM44C268C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	PDF	KM44C268C KM44C268C-6 KM44C268C-7 KM44C268C-8 110ns 130ns 150ns KM44C268C 20-LEAD MQ4A um227 NLMQ4
Untitled Abstract: No abstract text available Text: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)	OCR Scan	PDF	V53C8129H V53C8129H-50 24-pin 26/24-pin QD03fl3b
Untitled Abstract: No abstract text available Text: GM71C S 18160C(CL) 1Mx16,SV, 1K Ref, FP Description The F e a tu re s G M 7 1 C ( S ) 1 81 6 0 C / C L generation dynamic x 16 bit. RAM is th e n e w organized 1,048,576 G M 7 1 C (S )1 8 1 6 0 C / C L has realized higher density, higher performance and various	OCR Scan	PDF	GM71C 18160C 1Mx16 576Words s100us. 100us,
HYM532814 Abstract: TRA8 L HYM536410 HYM532100AM HYM532100 Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .	OCR Scan	PDF	HYM532124AW HYM532224AW HYM532224AE HYM532214AE HYM532414AM HYM532414BM 1Mx32 2Mx32 HYM532814 TRA8 L HYM536410 HYM532100AM HYM532100
Untitled Abstract: No abstract text available Text: O K I Semiconductor E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power	OCR Scan	PDF	304-Word E2G0033-17-41 MSM5116400B TheMSM5116400B 26/24-pin cycles/64
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM5 18200 _ E 2 G 00 28 - 17-41 4,194,304-Word x 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM518200 is a 4,194304-word x 2-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM518200 achieves high integration, high-speed operation, and low-power	OCR Scan	PDF	304-Word MSM518200 194304-word 26/24-pin cycles/64 MSM518200
d42s65405g5 Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405 Text: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿PD42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿PD42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.	OCR Scan	PDF	uPD42S64405 uPD4264405 uPD42S65405 uPD4265405 64M-BIT PD42S64405, 42S65405, /iPD42S64405, 42S65405 32-pin d42s65405g5 NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405

TCWP Search Results

TCWP Price and Stock

CUI Inc SDI90B-12-TCW-P51

CUI Inc SDI120B-19-TCW-P51

CUI Inc SDI120B-48-TCW-P51

CUI Inc SDI120B-15-TCW-P51

CUI Inc SDI120B-12-TCW-P51

TCWP Datasheets Context Search

R5F61668RFPV

LGA144

SMCS332

SMCS332

2377 HITACHI

R5F61664

ERC32

irf 539

Untitled

FC24P

Untitled

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TC51440ASJ

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WO1M

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MQ4A

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HYM532814

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d42s65405g5