KMM366S1 Search Results

Contextual Info: Preliminary KMM366S1723T_PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S1723T KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam­

Contextual Info: KMM366S104CT Preliminary PC100 SDRAM MODULE Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5 u A to ± 1uA, llL(DQ) : ± 5 u A to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1.4V ±200 mV.

Contextual Info: PC100 SDRAM MODULE KMM366S1654ATS KMM366S1654ATS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654ATS is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Sam ­

Contextual Info: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: NEW JEDEC SDRAM MODULE KMM366S1620AT KMM366S1620AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx4, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1620AT is a 16M bit x 64 Synchronous - Performance range Max Freq. Speed

Contextual Info: Preliminary PC66 SDRAM MODULE KMM366S1723TL KMM366S1723TL SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1723TL is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1723TL consists of eight CMOS 16M x 8 bit with

KMM366S1723BTS-GA

Contextual Info: KMM366S1723BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Aug., 1999 • PC133 first published. REV. 0 Aug. 1999 KMM366S1723BTS PC133 Unbuffered DIMM KMM366S1723BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: KMM366S1723TS PC100 Unbuffered DIMM Revision History Revision 0.0 Mar. 25, 1999 Revision 0.1 (May. 24, 1999) - Changed "Detail C" in PCB Dimension. Rev.0.1 May 1999 PC100 Unbuffered DIMM KMM366S1723TS KMM366S1723TS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: PC100 Unbuffered DIMM KMM366S1723ATS Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

Contextual Info: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V

3b2 spd

Contextual Info: NEW JEDEC SDRAM MODULE KMM366S1603AT KMM366S1603AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1603AT is a 16M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

CI373

Abstract: KMM366S104BTN-G2 kmm366s104
Contextual Info: KMM366S104BTN NEW JEDEC SDRAM MODULE KMM366S104BTN SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1Q4BTN is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S1623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V

KMM366S1723T-G8

Abstract: KMM366S1723T-GH KMM366S1723T-GL
Contextual Info: KMM366S1723T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM366S1723T PC100 SDRAM MODULE KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

km48s8030bt

Abstract: KMM366S1623BTL KMM366S1623BTL-G0
Contextual Info: PC66 SDRAM MODULE KMM366S1623BTL Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.

KM48S8030BT-G10

Abstract: KM48S803 KMM366S1623BTL KMM366S1623BTL-G0
Contextual Info: KMM366S1623BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM366S1723T-G8

Abstract: KMM366S1723T-GH KMM366S1723T-GL
Contextual Info: KMM366S1723T Preliminary PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package Dimensions is revised. REV. 1 July 1998 Preliminary PC100 SDRAM MODULE KMM366S1723T KMM366S1723T SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

KMM366S1623CT-GL

Abstract: KMM366S1623CT KMM366S1623CT-G8 KMM366S1623CT-GH
Contextual Info: Preliminary PC100 SDRAM MODULE KMM366S1623CT KMM366S1623CT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KMM366S1623DTL

Abstract: KMM366S1623DTL-G0
Contextual Info: KMM366S1623DTL PC66 Unbuffered DIMM Revision History Revision 0.0 July 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

KM48S8020

Abstract: KMM366S1603BTL-G0
Contextual Info: KMM366S1603BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

Contextual Info: Preliminary KMM366S1724T_ PC100 SDRAM MODULE Revision History Revision .1 July 1998 - Package D im ensions is revised. REV. 1 July 1998 ELECTRONICS Preliminary PC100 SDRAM MODULE KMM366S1724T KMM366S1724T SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: KMM366S104CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.

KMM366S1623BT

Abstract: KMM366S1623BT-G8 KMM366S1623BT-GH KMM366S1623BT-GL
Contextual Info: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. llL(lnputs) : ± 5uA to ± 1 u A , I il (DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V d d = 3.3V, T a = 23°C, f = 1MHz, V