Untitled
Abstract: No abstract text available
Text: cP IITSU June 1998 Revision 1.0 data sheet GOB 1UV6432 A/B -(70/80/10)Q-S 8MByte (1Mx64) CMOS Synchronous Graphic Module General Description The G O B I UV6432(A/B)-(70/80/10)Q-S is a high performance, 8-megabyte synchronous, graphic RAM module organized as 1M
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1UV6432
1Mx64)
UV6432
144-pin,
MB81G163222-
512Kx32
UV6432A
UV6432B
143Mhz
125Mhz
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PDF
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E D C 1 U V 6 4 1 1 !4 -(60/70)(J/T)G - S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The ED C 1U V 641(1/4)-(60/70)(JA T )G -S is a high pe rform ance, EDO (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule
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1Mx64)
168-pins,
MB81V1
-DS-20391
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PDF
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4715-01
Abstract: No abstract text available
Text: IBM13N1649NC IBM13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency
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IBM13N1649NC
IBM13N1809NC
1Mx64/80
SA14-4715-01
4715-01
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PDF
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Untitled
Abstract: No abstract text available
Text: <p July 1996 Revision 1.0 HATA G H F F T - SDC1UV6412- 67/84/100/125 T-S 8MByte (1Mx64) CMOS Synchronous DRAM Module General Description The SDC1U V6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1 M
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SDC1UV6412-
1Mx64)
V6412-
168-pin,
11171622A-
1Mx16
125MHz)
100MHz)
84MHz)
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PDF
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a
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OCR Scan
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1Mx64)
144-pins,
B81V1
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 B 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60
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1Mx64
75H3412
SA14-4619-01
IBM11M1645B
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PDF
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DQ45-A
Abstract: 033J1
Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle
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IBM13N1649NC
IBM13N1809NC
168-Pin
1Mx64/80
DQ45-A
033J1
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The
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KMM466F104AT-L
KMM466F124AT-L
KMM466F124AT-L
1Mx64
1Mx16,
KMM466F10
1Mx16bit
44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64
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KMM364E124B
KMM364E124BJ
1Mx64
1Mx16,
KMM364E124BJ
cycles/16ms,
1Mx16bit
42-pin
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PDF
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M5M4V18165CJ
Abstract: MITSUBISHI date code mitsubishi date year M5M4V18165C mitsubishi assembly year mitsubishi Manufacturing year mitsubishi year code 1048576bit DRAM
Text: MITSUBISHI LSIs Preliminary Spec. MH1V645CWXPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
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MH1V645CWXPJ-6
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
M5M4V18165CJ
MITSUBISHI date code
mitsubishi date year
M5M4V18165C
mitsubishi assembly year
mitsubishi Manufacturing year
mitsubishi year code
1048576bit DRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: a M/HITE /MICROELECTRONICS WPN641006UD1-10VG 8MBYTE 1Mx64 Synchronous DRAM (3.3V Supply) Unbuffered D IM M MODULE advanced* FEATURES GENERAL DESCRIPTION • M axim um frequency = 100M H z (tcc=10ns) The W hite M icro ele ctro nics W P N 641006U D 1-10V G is a 1 M x 64
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WPN641006UD1-10VG
1Mx64)
641006U
1-10VG
50-pin
400-m
WPN641006UD1
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PDF
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ga15 engine wiring diagram
Abstract: IBM11M4730C4M
Text: Discontinued 12/98 - last order; 9/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T4644MC IBM13T1649NC 1M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1Mx64 Synchronous DRAM SO DIMM
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IBM11M4730C4M
E12/10,
IBM13T4644MC
IBM13T1649NC
1Mx64
ga15 engine wiring diagram
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PDF
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Untitled
Abstract: No abstract text available
Text: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
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V645C
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
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PDF
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1997 Revision 1.0 data sheet EDC1UV641 1/4 B-60(J/T)G-S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641 (1/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga nized as 1M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
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EDC1UV641(
1Mx64)
EDC1UV641
168-pin,
MB81V1
165B-60
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PDF
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SII Front Main Board version 2.0
Abstract: date code samsung capacitors
Text: SGRAM MODULE KMM965G112Q P N / KMM966G112Q(P)N KMM965G112Q(P)N / KMM966G112Q(P)N SGRAM SODIMM 1Mx64 SGRAM SODIMM based on 512Kx32, 2K Refresh, 3.3V Synchronous Graphie RAMs FEATURES GENERAL DESCRIPTION Performance Range Part NO. Max. Freq. (tcc) KMM965G112Q(P)N-G7
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KMM965G112Q
KMM966G112Q
1Mx64
512Kx32,
KMM965
G112Q
SII Front Main Board version 2.0
date code samsung capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S104CT_
144pin
KMM466S104CT
1Mx64
1Mx16
400mil
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S104CTL
KMM366S104CTL
1Mx64
1Mx16
400mil
166-pin
168-pin
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PDF
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IBM 1Mx4
Abstract: 1MX16
Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V
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1Mx64
364C120C
KMM364C124A
C-421000AA64
HB56A164EJ
364V120C
364V124A
372C122C
372C125A
05H0902
IBM 1Mx4
1MX16
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M1640B1M x 6410/10, 5.0V, AuMMDL19DSU-001015527. IBM11M1640B 1M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 1Mx64 Fast Page Mode DIMM
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IBM11M1640B1M
AuMMDL19DSU-001015527.
IBM11M1640B
1Mx64
110ns
130ns
SA14-4605-02
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PDF
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BVTE16
Abstract: No abstract text available
Text: »M YU H D W I • HYM7V64100C Q-SERIES > SO-DIMM 1Mx64 bit SDRAM MODULE based on 1Mx16 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64100C is high speed 3.3Volt CM OS Synchronous DRAM module consisting of four 1Mx16 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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HYM7V64100C
1Mx64
1Mx16
44-pin
168-pin
33fiF
HYM7V641OOC
HYM7V64100CLTQG-10
BVTE16
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PDF
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HY51V18164B
Abstract: HY51V18164
Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy
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HYM5V64124A
1Mx64-bit
64-bit
HY51V18164B
HYM5V64124AQG/ATQG/ASLQG/ASLTQG
DQ0-DQ63)
1CE16-10-APR96
144pin
HY51V18164
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 ;tRAC i RAS Access Time 60ns 70ns ;tcAC 1CAS Access Time 20ns
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1Mx64
104ns
124ns
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM13N1649NC IBM13N1809NC 1M X 64/80 1 B ank U nbuffered S D R A M M odule Features 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM Performance: -10 CAS Latency I fcK ! t CK i Clock Frequency i Clock 100
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IBM13N1649NC
IBM13N1809NC
1Mx64/80
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C120CJ/CT KMM364C120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM based on 1M x4,1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C120C is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C120C consists of sixteen CMOS
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KMM364C120CJ/CT
KMM364C120CJ/CT
1Mx64
KMM364C120C
KMM364C120C-7
300mil
48pin
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PDF
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