KMM366S1623BT Search Results

Contextual Info: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V

Contextual Info: KMM366S1623BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V

KMM366S1623BT-GL

Contextual Info: KMM366S1623BT PC100 SDRAM MODULE KMM366S1623BT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

km48s8030bt

Abstract: KMM366S1623BTL KMM366S1623BTL-G0
Contextual Info: PC66 SDRAM MODULE KMM366S1623BTL Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : +5uA to ± 1 .5uA.

KM48S8030BT-G10

Abstract: KM48S803 KMM366S1623BTL KMM366S1623BTL-G0
Contextual Info: KMM366S1623BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM366S1623BT

Abstract: KMM366S1623BT-G8 KMM366S1623BT-GH KMM366S1623BT-GL
Contextual Info: PC100 SDRAM MODULE KMM366S1623BT Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. llL(lnputs) : ± 5uA to ± 1 u A , I il (DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V d d = 3.3V, T a = 23°C, f = 1MHz, V

Contextual Info: KMM366S1623BTL PC66 SDRAM MODULE KMM366S1623BTL SDRAM DiMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623BTL is a 16M bit x 64 Synchro­ • Performance range nous Dynamic RAM high density memory module. The Samsung

Contextual Info: Preliminary Intel 1.0 SDRAM MODULE KMM366S1623BTL_ Revision History Revision .l N ovem ber 1997 This spec has changed in accordance with New Binning [s F ' ELECTRO ftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S1623BTL

KM48S8030BT-G8

Abstract: KMM366S1623BT-GL MV 42H KMM366S1623BT KMM366S1623BT-G8 KMM366S1623BT-GH KM48S8030BT-G
Contextual Info: KMM366S1623BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .