15j100 capacitor
Abstract: W28NT1000 W48NT600 15j100 RETMA RAILS p022h P012H R36W MARKING CODE WM9 12EB70
Text: ACOPIAN PROMISES TO SHIP WITHIN THREE DAYS Acopian P.O. Box 638 Easton, PA 18044-0638 . . . and we keep that promise. For more than 40 years, Acopian has been shipping AC to DC power modules within three days after receipt of an order. During this period, the Acopian line has expanded from
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24EB60
Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Text: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC
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Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5
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Untitled
Abstract: No abstract text available
Text: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13
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WS256K8-XCX
256Kx8
MIL-STD-883
06HXX
07HXX
256Kx
08HXX
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Triac t460
Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Text: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •
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O-220AB'
oTO-220AB
Triac t460
JE 33
H112
T210
T460
X108
triac BT 0266
8P2SM
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9P4M
Abstract: 10P4M 12P4M 12p8 PLE5P8 PLE8P8 8p4c t461 PLE5P8A
Text: MONOLITHIC MEMORIES INC tfl » e J b3D3mO □ OOS'tkS 3 f D r-'W ’ Programmable Logic Element PLE Circuit Fam ily Ordering Information Features/Benefits PLE5P8 A C N STD • Programmable replacement for conventional TTL logic TZPR O C ESSIN G T • Reduces 1C inventories and simplities their control
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A10A9A6'
9P4M
10P4M
12P4M
12p8
PLE5P8
PLE8P8
8p4c
t461
PLE5P8A
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ltdf
Abstract: 28C64A 28C64A-20 28C64A-25
Text: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-
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28C64A
ds11109a-8
ltdf
28C64A
28C64A-20
28C64A-25
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MHS 65756
Abstract: HM1-65756
Text: 41E MATRA SñbñMSfc. D 00G5171 5ñS • M N H S M H S January 1991 HM 65756 HI-REL DATA SHEET 32 k X 8 HIGH SPEED CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE OUTPUT ENABLE
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00G5171
MHS 65756
HM1-65756
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TC571000D-15
Abstract: TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 TC571000D tc571001d h102 d1 tc5710000
Text: TOSHIBA MOS MEMORY PRODUCTS T C 5 710 0 0 D -15 , -20, -200, -25 T C 5 71 0 0 1D -15 , -20, -200, -25 IDESCRIPTIONI The TC571000D/TC571001D is a 131,072 word * 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC571000D is JEDEC standard pin configuration and the TC571001D is compatible with
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TC571000D/TC571001D
TC571000D
TC571001D
30mA/6
150ns/200ns/250ns.
TC571000D/TC571001D.
TC571001D
TC571000D-15
TC5710000-15
TC571001D-15
571000D
TC531000P
TC5710010-15
h102 d1
tc5710000
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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Untitled
Abstract: No abstract text available
Text: G 2 WMF128K8-XXX5 M/HITE /MICROELECTRONICS 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • A c c e s s T i m e s o f 60, 7 0, 90, 120, 1 5 0 n s ■ O rg a n iz e d as 1 2 8 K x 8 ■ P a c k a g in g ■ C o m m e r c i a l , In d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a ng e s
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WMF128K8-XXX5
128Kx8
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smd A7t
Abstract: smd code A7t
Text: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
smd A7t
smd code A7t
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Untitled
Abstract: No abstract text available
Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL
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HM62W8128
131072-Word
8128LP-10
8128LP-12
8128LP-1O
LP-12
8128LFP-10
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EZ722
Abstract: A7t smd EZ524 smd code A7t smd A6t zd 409 5962-88525 07 xa Select 642 UX A14C AT28C256
Text: Features • Fast Read Access Time -150 ns • Automatic Page Write Operation - Internal Address and Data Latches for 64 Bytes - Internal Control Timer • Fast Write Cycle Times - Page Write Cycle Time: 3 ms or 10 ms Maximum - 1 to 64-Byte Page Write Operation
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64-Byte
AT28C256
EZ722
A7t smd
EZ524
smd code A7t
smd A6t
zd 409
5962-88525 07 xa
Select 642 UX
A14C
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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Untitled
Abstract: No abstract text available
Text: • HYUNDAI HY2316050 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS
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HY2316050
16-bit
16Mbit
16bit
120ns
16bit
600miJ
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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TC5565
Abstract: TC5565APL-12L 2764 eprom A12CZ a5c5 TC5565APL TMM2764D TC5565AFL15L A6c4 TC5565APL-15L
Text: 8,192 W O RD X 8 BIT C M O S STATIC RAM ¡d e s c r i p t i o n ! The TC5565APL/AFL is a 65,5 3 6 b it sta tic ran d o m access m em ory o rg an ized as 8,192 w ords by 8 b its u sin g CMOS technology, an d o p erate s from a sin g le 5V supply. A dvanced c irc u it te ch n iq u es
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TC5565APL/AFL
100ns/120ns/150ns.
100ns/div
TC5565APLâ
TC5565APL-12L,
TC5565APL-15L
TC5565AFLâ
TC5565AFL-12L,
TC5565
TC5565APL-12L
2764 eprom
A12CZ
a5c5
TC5565APL
TMM2764D
TC5565AFL15L
A6c4
TC5565APL-15L
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T8995
Abstract: MT8994 Rato RT 0104 T8972
Text: MT8994/5B Digital Telephone * is o 2-cm o s st-b u s f a m ily •VI I T E L D-Phone 9161 -002-093-N A ISSUE 6 Novem ber 1991 Features Ordering Information • Integrated digital telephone circuit MT8994/5BC • /i-Law/A-Law codec and filters p-Law/A-Law 40 Pin Cerdip
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MT8994/5B
-002-093-N
bE4T37D
T8995
MT8994
Rato RT 0104
T8972
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DS9471-R2
Abstract: MC68B00L M6800 programming manual sem 5025 MC6800P motorola M6800 MC6800 MC6800L MC6800 manual 9c4h
Text: ! M M O T O R O L A SEM IC O N DU C TO R S b _ . J E ~ I f c i \ BL ."J 8 AUST N TEXA 7 c ,'. MOS -B IT MICROPROCESSING U N IT M PU The MC6800 is a monolithic 8 -bit microprocessor forming the central control function for Motorola's M6800 family. Compatible with TTL, the
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MC6800
M6800
MC6800,
16-bit
MC6800/D
DS9471-R2
MC68B00L
M6800 programming manual
sem 5025
MC6800P
motorola M6800
MC6800L
MC6800 manual
9c4h
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 256Kx18 Synchronous SRAM KM718V890 Document Title 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date 0.0 Initial draft Decmber. 15. 1997 0.1 Change speed symbol 6.0/6.7/7.5/8.5 to 60/67/75/85, February. 02. 1998
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256Kx18
KM718V890
256Kx18-Bit
100-TQFP-1420A
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100-PIN TQFP XILINX DIMENSION
Abstract: No abstract text available
Text: m i cr o e le ct r o n ic s group Data Sheet February 1997 Lucent Technologies Bell Labs Innovations ATT3000 Series Field-Programmable Gate Arrays Features Description • High performance: — Up to 270 MHz toggle rates — 4-input LUT delays <2.7 ns The CMOS ATT3000 Series Field-Programmable
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ATT3000
DS97-048FPG
DS94-177FPGA)
100-PIN TQFP XILINX DIMENSION
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