Untitled
Abstract: No abstract text available
Text: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG P12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90
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P12N100AU1
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3580J
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings
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60N60
OT-227B,
IXGN6QN60
3580J
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10N60A
Abstract: IGBT 10N60 10N60 IXGH10N60A IXGH10N60
Text: □ IXYS Preliminary data L 0 W V CE,sa. I G B T IXGA/IXGP/IXGH10N60 IXGA/IXGP/IXGH10N60A High speed IGBT Vv CES ^C25 600 V 600 V 20 A 20 A V C E sat) 2.5 V 3.0 V T0-220AB (IXG P) Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
150i2
O-247
10N60A
IGBT 10N60
10N60
IXGH10N60A
IXGH10N60
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12N100U1
Abstract: T9lc 12N100AU1
Text: V CES LowVCE sat IGBT with Diode High speed IGBT with Diode IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 Sym bol Test C onditions VCES Tj = 25°C to 150°C 1000 V Vco* Tj = 25°C to 150°C; RGE = 1 M il 1000 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
standard03
K38Ts
12N100U1
T9lc
12N100AU1
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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IXGH17N100
Abstract: C5250
Text: DIXYS IGBT L0W CES IXGH 17N100 IXGH 17N100A V CE sat, High speed Symbol Test Conditions V *C E S Tj = 25°Cto 150°C VCGR T,J = 25°C to 150°C; VGES 1000 V 1000 V Maximum Ratings 1000 V 1000 V Continuous ±20 V VGEM Transient ±30 V ^C25 Tc =25°C 34 A C90
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17N100
17N100A
O-247AD
17N100A
17N100U1
IXGH17N100
C5250
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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32N60BU1
Abstract: 32N60B h32n60b e5200 32N60BU
Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C
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IXGH39N60B
IXGH39N60BS
O-247
39N60BS)
32N60BU1
32N60B
h32n60b
e5200
32N60BU
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PDF
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60N60
Abstract: No abstract text available
Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous
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60N60
60N60
O-247
O-268
O-264
1999IXYS
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IXGH32N60
Abstract: 32N60A
Text: IXYS HiPerFAST IGBT IXGH 32N60A VCES ^C25 V CE sat tfl 600 V 60 A 2.9 V 125 ns '4 0 Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 600 V V CGR T,J = 25°C to 150°C;7 FL, = 1 MQ Cah 600 V VGES Continuous +20 V VGEM T ransient i3Q
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32N60A
O-247AD
O-247
IXGH32N60
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10N100
Abstract: No abstract text available
Text: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 IXGH10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs
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IXGH10N100
IXGH10N100A
O-247
10N100A
10N100A
10N100
10N100U1
10N100AU1
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14055B
Abstract: No abstract text available
Text: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous
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IXGH30N60B
IXGT30N60B
O-268
-247A
14055B
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025B2
Abstract: ge motor 752
Text: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.
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28N60B
28N60B
O-268
O-247
025B2
ge motor 752
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1xys
Abstract: No abstract text available
Text: Low CE sat IGBT with Diode High speed IGBT with Diode Symbol IXGH17N100U1 IXGH17N100AU1 Maximum Ratings Test Conditions T, = 25“C to 1 5 0 °C 1000 V T j = 25°C to 150°C; RGE = 1 M il 1000 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc =25°C
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IXGH17N100U1
IXGH17N100AU1
O-247
1XGH17N100U1
11C6H
IXQH17N180AU1
1xys
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