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Advantech Co Ltd WISE-6610-N100-A LORAWAN GATEWAY 100 NODES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	WISE-6610-N100-A	Box	2		1	1 $822 10 $822 100 $822 1000 $822 10000 $822	Buy Now
Avnet Americas	WISE-6610-N100-A	Bulk		10 Weeks	1	1 $920.64 10 $907.488 100 $848.304 1000 $848.304 10000 $848.304	Buy Now
Newark	WISE-6610-N100-A	Bulk	2		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NAC	WISE-6610-N100-A				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Neutron USA	WISE-6610-N100-A		6			1 $878.96 10 $878.96 100 $878.96 1000 $878.96 10000 $878.96	Buy Now
IXYS Corporation IXGH10N100A IGBT 1000V 20A 100W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N100A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH10N100AU1 IGBT 1000V 20A 100W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH10N100AU1	Tube			30	1 - 10 - 100 $4.07267 1000 $4.07267 10000 $4.07267	Buy Now
ComSIT USA	IXGH10N100AU1		45			1 - 10 - 100 - 1000 - 10000 -	Get Quote

10N100A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
10N100U1 Abstract: N100A ixgh 1500 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 N100A ixgh 1500
10N100 Abstract: 10N10 10N100A N100 IC-2520 Text: Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20	Original	PDF	N100A 10N100 10N100A 10N100 10N100A 10N10 N100 IC-2520
10N100A Abstract: 10N100 N100 Text: VCES Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings 1000 V 20 A 1000 V 20 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25	Original	PDF	N100A 10N100 10N100A 10N100 10N100A 10N100U1 10N100AU1 N100
10N100U1 Abstract: RG150 Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 RG150
50n50c Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60 Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
Untitled Abstract: No abstract text available Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2	OCR Scan	PDF	N100U1 N100AU1 O-247 10N100U1 10N100AU1 4bflb22b
10N100 Abstract: No abstract text available Text: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs	OCR Scan	PDF	IXGH10N100 IXGH10N100A O-247 10N100A 10N100A 10N100 10N100U1 10N100AU1
1XGH10N100U1 Abstract: No abstract text available Text: Low VCE{sat IGBT with Diode High speed IGBT with Diode IXGH10N100U1 10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30	OCR Scan	PDF	IXGH10N100U1 IXGH10N100AU1 1XGH10N100U1
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
SMD diode b24 Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64	OCR Scan	PDF	12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a
Untitled Abstract: No abstract text available Text: Low VCE s>t IGBT High speed IGBT IXGH10N100 10N100A « VC E S ^C25 V * C E (sat) 1000 V 1000V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions v CES Tj = 25°C to 150°C 1000 V ^CGR Tj = 25°C to 150°C; RGE= 1 M£2 1000 V v" ges v GEM Continuous ±20 V T ransient	OCR Scan	PDF	IXGH10N100 IXGH10N100A O-247 10N100 10N100A 10N100U1 10N100AU1 0003b34
IXGH20N60U1 Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package	OCR Scan	PDF	1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

12n60u Abstract: sta 750 tic 263a Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH	OCR Scan	PDF