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    1XGH10N100U1

    Abstract: No abstract text available
    Text: Low VCE{sat IGBT with Diode High speed IGBT with Diode IXGH10N100U1 IXGH10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30


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