GSM WCDMA REPEATER CIRCUIT Search Results

GSM WCDMA repeater circuit

Abstract: GSM repeater power amplifier module umts repeater circuit DP-36 IMT-2000 RFM2140-10 gsm wcdma repeater
Contextual Info: Power Amplifier RFM2140-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost

DP-36

Abstract: IMT-2000 GSM repeater circuit GSM repeater ic GSM WCDMA repeater circuit
Contextual Info: Power Amplifier RFM2140-10 Product Features Application • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost

GSM 3g repeater circuit

Abstract: GSM repeater circuit gsm repeater
Contextual Info: MCM LNA LCL0912-L / LCL1512-L LCL1812-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

GSM 3g repeater circuit

Abstract: LCL1502 LCL1502-L repeater GSM LNA GSM repeater circuit gsm repeater LCL0402-L gsm wcdma repeater
Contextual Info: MCM LNA LCL0402-L / LCL0902-L LCL1502-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

Contextual Info: MCM LNA LCL1904-L / LCL2304-L LCL3504-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

Contextual Info: MCM LNA LCL1802-L / LCL1902-L LCL2102-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

GSM 3g repeater circuit

Contextual Info: MCM LNA LCL1503-L / LCL1803-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

Contextual Info: MCM LNA LCL3212-L / LCL3512-L LCL3712-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

Contextual Info: MCM LNA LCL1903-L / LCL2103A-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

GSM 3g repeater circuit

Abstract: LCL2302-L parameters
Contextual Info: MCM LNA LCL2302-L / LCL2702-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

GSM 3g repeater circuit

Abstract: GSM WCDMA repeater circuit
Contextual Info: MCM LNA LCL2603-L / LCL3503-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & HBT chip on board • No matching circuit needed • High Gain & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

GSM 3g repeater circuit

Contextual Info: MCM LNA LCL2112-L / LCL2312-L LCL2712-L Product Features Applications • Multichip Hybrid Module • GaAs p-HEMT & MESFET chip on board • No matching circuit needed • High IP3 & Low Noise • Single Supply Voltage +5V • Surface Mount Hybrid Type • Tape & Reel Packaging

Contextual Info: Page 1 of 2 English OM7922 OM7922 - Variable gain amplifier BGA7204 customer evaluation kit information Demo board description The BGA7204 customer evaluation kit enables the user to evaluate the performance of the variable gain amplifier BGA7204. The kit

lte RF Transceiver 450MHz

Abstract: RFPA3800 RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz

transistor sp 772

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

CMY210

Abstract: GSM repeater circuit GENERAL DESIGN PROCEDURE FOR BANDPASS FILTERS cdma repeater circuit Signal Path Designer
Contextual Info: Demonstration Board Documentation / Applications Note V1.0 CMY210 Ultra linear General purpose up/down mixer Features: • Very High Input IP3 of 24 dBm typical • Very Low LO Power demand of 0 dBm typical; Wide input range • Wide LO Frequency Range: <500 MHz to

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

GSM repeater circuit using transistor

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

WP-22

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz