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    Lite-On Semiconductor Corporation LTR-743DBM1-TA

    SENSOR PHOTODIODE 880NM RADIAL
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    DigiKey LTR-743DBM1-TA Ammo Pack 2,000
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    Avnet Americas LTR-743DBM1-TA Bag 22 Weeks 2,000
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    Mouser Electronics LTR-743DBM1-TA 5,868
    • 1 $0.49
    • 10 $0.326
    • 100 $0.215
    • 1000 $0.166
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    Bimba Manufacturing Company PC-043-DBM

    Cylinder, O.L., Plastic End Caps; 3/4In Bore; Stroke: 3In; F Nose, Bump ,Magnet | Bimba PC-043-DBM
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    RS PC-043-DBM Bulk 5 Weeks 1
    • 1 $110
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    Bimba Manufacturing Company LT-043-DBM

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 3 in; Double Acting ; | Bimba LT-043-DBM
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    RS LT-043-DBM Bulk 5 Weeks 1
    • 1 $65.41
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    Bimba Manufacturing Company LT-043-DBMV

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 3 in; Double Acting ; | Bimba LT-043-DBMV
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    RS LT-043-DBMV Bulk 5 Weeks 1
    • 1 $84.15
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    Bimba Manufacturing Company LT-043-DBMT1

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 3 in; Double Acting ; | Bimba LT-043-DBMT1
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    RS LT-043-DBMT1 Bulk 5 Weeks 1
    • 1 $70.55
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    43DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA1718-1P

    Abstract: EIB1718-1P
    Text: Excelics EIA/EIB1718-1P PRELIMINARY DATA SHEET 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(43dBm TYPICAL)


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    PDF EIA/EIB1718-1P 43dBm EIA1718-1P 32dBm 175oC 150oC 45dBc 20dBm/Tone -65/150oC EIA1718-1P EIB1718-1P

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


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    PDF FLL21E090IK 43dBm 2200MHz FLL21E090IK

    212-PIN

    Abstract: EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222
    Text: P02221B2P Technical Note 500mW InGaP HBT Amplifier ♦Features 4 ♦Functional Diagram •1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package


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    PDF P02221B2P 500mW 43dBm 14GHz OT-89 KP035J P0222e. 212-PIN EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222

    sumitomo 131 datasheet

    Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package


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    PDF P0120008P 43dBm OT-89 17GHz KP028J P0120008P sumitomo 131 datasheet DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J RR0816

    P012

    Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
    Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure


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    PDF P0120008P 43dBm OT-89 P0120008P P012 ISO-14001 KP028J RR0816 marking c7 sot-89

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP205A 3000MHz 43dBm 22dBm OT-89 OT-89 AP205A 2300MHz

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


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    PDF RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240

    Untitled

    Abstract: No abstract text available
    Text: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)


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    PDF LT6402-12 300MHz 300MHz. 12-bit 14-bit 75MHz 20MHz

    AP205A

    Abstract: Amplifier SOT-89 c4 mmic C4 sot 89 sot89 mmic 25 AP205 mmic amplifier sot-89 C5100 mmic C5 sot 89
    Text: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP205A 3000MHz 43dBm 22dBm OT-89 OT-89 AP205A Amplifier SOT-89 c4 mmic C4 sot 89 sot89 mmic 25 AP205 mmic amplifier sot-89 C5100 mmic C5 sot 89

    mmic C4 sot 89

    Abstract: No abstract text available
    Text: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP209 3000MHz 43dBm 24dBm OT-89 OT-89 AP209 OT-89) mmic C4 sot 89

    Untitled

    Abstract: No abstract text available
    Text: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


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    PDF RT440 50MHz 43dBm 14GHz 46dBm 900MHz IMT-2000 WP-14

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP205A 3000MHz 43dBm 22dBm OT-89 OT-89 AP205A

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP249 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 43dBm Output IP3 • 26dB Gain • 24dBm P1dB • Single +9V Supply •C DMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP249 is a high linearity amplifier designed with GaAs MMIC. AP249 is designed for applications such as GSM, CDMA, WCDMA driver devices which require high IP3


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    PDF AP249 43dBm 24dBm AP249

    Untitled

    Abstract: No abstract text available
    Text: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


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    PDF RT440 50MHz 43dBm 14GHz 46dBm 900MHz IMT-2000 WP-14

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


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    PDF FLL21E090IK 43dBm 2200MHz FLL21E090IK

    LT6402

    Abstract: OIP310M OIP320M OIP325M LTC17XX LTC22xx LC-B-B
    Text: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)


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    PDF LT6402-12 300MHz 43dBm 82dBc 20MHz, 20MHz) 16-Lead 300MHz. LT6402-12 LT6411 LT6402 OIP310M OIP320M OIP325M LTC17XX LTC22xx LC-B-B

    M/A-COM TOP PART MARKING QFN

    Abstract: OIP310M L 0706 lter marking LT6402 OIP320M OIP325M
    Text: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise:


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    PDF LT6402-12 300MHz 43dBm 82dBc 20MHz, 20MHz) 16-Lead 300MHz. LT6402-12 150mW M/A-COM TOP PART MARKING QFN OIP310M L 0706 lter marking LT6402 OIP320M OIP325M

    AP209

    Abstract: 50-3000MHz sot89 mmic 25 mmic C4 sot 89 PFL3 AP-209
    Text: MMIC AP209 Product Features Applications • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP209 3000MHz 43dBm 24dBm OT-89 OT-89 AP209 50-3000MHz sot89 mmic 25 mmic C4 sot 89 PFL3 AP-209

    Untitled

    Abstract: No abstract text available
    Text: TGA2533-SM Ku-Band Power Amplifier Applications •  Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features          Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB


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    PDF TGA2533-SM 43dBm TGA2533-SM 43dBm 20dBm

    B0725

    Abstract: JESD22-A114 RO4003 TGA2533-SM
    Text: TGA2533-SM Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features • • • • • • • • • Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB


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    PDF TGA2533-SM 43dBm TGA2533-SM 43dBm 20dBm B0725 JESD22-A114 RO4003

    16l soic8

    Abstract: qfn16 thermal resistance
    Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters


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    PDF ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor CA2875R trw rf hybrid amp TRW amplifier
    Text: RF Devices Division TRW Electronic Components Group CA2875R CA2875R Thin Film RF Linear Hybrid Amplifier • Wide Dynamic Range: +43dBm Third Order Intercept • Excellent Match at Input/Output: Lowest VSWR • Low Noise Figure Push-pull Cascode Circuit


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    PDF CA2875R CA2875R 43dBm -32dB trw RF POWER TRANSISTOR trw rf transistor trw rf hybrid amp TRW amplifier

    SMM-280-2

    Abstract: No abstract text available
    Text: SMM-280-2 1.5-2.7 GHz, 2 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 33dBm Output Power - High Third Order Intercept, +43dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package Description Stanford Microdevices' SMM-280-2 is a high performance


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    PDF SMM-280-2 33dBm 43dBm 1800mA 500mW

    Untitled

    Abstract: No abstract text available
    Text: SHF-0500 DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +33dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +43dBm Output 3rd Order Intercept Point - Low Cost Copper Tungsten Package


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    PDF SHF-0500 33dBm 43dBm F-500 450mA)