40DBM Search Results

ZX47-40-S

Abstract: ZX47-40 HN1173 ZX47-40LN-S zx4740s
Contextual Info: Coaxial Power Detector 50Ω, -40dBm to +20dBm, ZX47-40+ ZX47-40LN+ 10 to 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • Low Noise DC Output for ZX47-40LN+,

FLL21E010MK

Abstract: R104-5
Contextual Info: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

NF 841

Abstract: NF 831 035910
Contextual Info: 821 - 851 MHz Wireless Amplifier QBS-359 Parameters Guaranteed Guaranteed 25°C • 821-851 MHz frequency band • NF typically < 1dB overtemp • High 3rd OIP typically 40dBm overtemp +5 to +55°C 821 - 851 44.0 ± 0.5 +0.5/-0.5 1.0 1.0 55 55 1.5:1 1.5:1

FLL21E010MK

Abstract: r1045
Contextual Info: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

Contextual Info: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features  Single Voltage: 2.5V to 5.0V  40dBm P1dB  30dB Isolation at 2GHz

QQ-S-698

Abstract: 107D 204C 213B VS-25
Contextual Info: im i VS-25 High Isolation RF Switch 50-500 MHz SP2T TYPICAL PERFORMANCE GUARANTEED MINIMUM PERFORMANCE DATA Impedence: 50 ohm s 3rd O rder Intercept Point: +40dBm min on condition Overall Frequency Range: 50 -5 0 0 M H 7 Frequency Bands in MHz: DESCRIPTION

Contextual Info: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at

GHzS11

Abstract: 7824 TO-3 package
Contextual Info: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers

WP-22

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

S9G73

Contextual Info: MI CROWAVE P O WE R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pr I i m i n a r y •HIGH POWER «NON-MATCHED TYPE P1dB=40dBm ■ HIGH G AI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB

AE617

Abstract: 63dBc
Contextual Info: E-pHEMT MMIC AE617 Product Features Application • Small size • 5MHz-1000MHz • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost • Low Noise Figure • -63dBc CSO 79 Channels @ +40dBmV/ch

Contextual Info: HE315 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 23 Features 21 Frequency Range: 1～110MHz(typ) l Gain: 20dB(typ) l IP3(out): 40dBm(typ) l l 27dBm Typical 1dB Compression Standard Hermetic Package SP-1A

microstrip

Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
Contextual Info: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

Contextual Info: TGA2216-SM 0.1 – 3.0GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare QFN 5x5 mm 32L Product Features     Functional Block Diagram Frequency Range: 0.1 – 3.0GHz PSAT: >40dBm at PIN = 27dBm

ZX47-40LN-S

Abstract: ZX47-40-S ZX47-40LN HN1173 ZX47-40 zx4740s
Contextual Info: Coaxial ZX47-40+ ZX47-40LN+ Power Detector 50Ω, -40dBm to +20dBm, 10 to 8000 MHz Features Maximum Ratings Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power • Low Noise DC Output for ZX47-40LN+,

Contextual Info: MI CROWAVE P O W E R GaAs FET MICROWAVE SEMICONDUCTOR T E C H N I C A L DATA S9G73 Pro I •HI GH POWER «NON-MATCHED imi nary TYPE P1dB=40dBm ■ HIGH GAI N «HERMETICALLY SEALED PACKAGE G1dB=13dB 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB

Contextual Info: RF AMPLIFIER MODEL TR9772 A v a ila b le as: Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point +46dBm Typ. Second Order Two Tone Intercept Point.+40dBm (Typ.) Third Order Two Tone Intercept Point. +26dBm (Typ.)

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

7824 TO-3 package

Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
Contextual Info: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,

RFM70

Abstract: RFM70-S BEKEN RFM70-D wack PTX 631 PID diagram
Contextual Info: RFM70 V1.0 Low Power High Performance 2.4 GHz GFSK Transceiver Module Features „ 2400-2483.5 MHz ISM band operation „ Support 1 and 2 Mbps air data rate „ Programmable output power -40dBm to 5dBm „ Low power consumption „ Variable payload length from 1 to 32bytes

RT550PD

Abstract: RT550 RFHIC
Contextual Info: Power Transistor RT550PD Product Features Application • High Output Power P1dB = 40dBm typ @2.3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.3GHz • High Linearity • Hermetically sealed package • Competitive Price • Repeater • RF Sub-Systems

Contextual Info: ANALOG ► DEVICES Preliminary Technical 10W S P D T R F MEMS Switch with Integrated Control and Boost Circuitry ADG1939 la ta FEATURES GENERAL DESCRIPTION Wide frequency range: dc to 6 GHz High power handling capability: 10W/40dBm 0.2 dB insertion loss at 1 GHz

ZX47-40-S

Contextual Info: Coaxial Power Detector 50Ω - 40dBm to +20dBm, ZX47-40+ 10 - 8000 MHz Features Maximum Ratings O Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power O -40 C to 85 C -55OC to 100OC 5.7V 120mA

ED-4701

Abstract: FLL21E045IY
Contextual Info: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,