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    Spectrum Control QBH-2832-04LF

    RF Amplifier STANDARD LINEAR 2 WATT AMP (LE
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    TTI QBH-2832-04LF Bulk 5
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    Spectrum Control QBH-2832-04

    RF Amplifier STANDARD LINEAR 2 WATT AMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI QBH-2832-04 Bulk 5
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    33DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EPA240D

    Abstract: No abstract text available
    Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EPA240D 33dBm EPA240D

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110

    TOSHIBA MICROWAVE AMPLIFIER

    Abstract: TMD1013-1-431 TOSHIBA TMD1013-1-431
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ High Power P1dB=33dBm TYP. „ High Power Added Efficiency ηadd=14%(TYP.) „ High Gain G1dB=25dB(TYP.) „ Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°


    Original     		PDF TMD1013-1-431 33dBm 000pF TOSHIBA MICROWAVE AMPLIFIER TMD1013-1-431 TOSHIBA TMD1013-1-431

    Untitled

    Abstract: No abstract text available
    Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling


    Original     		PDF MASW-004100-1193 50MHz 26GHz 20GHz 33dBm MASW-004100-1193

    EMM5329ZW

    Abstract: V23133 marking code V3.V
    Text: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS


    Original     		PDF EMM5329ZW 33dBm SC-70 OT363 EMM5329ZW V23133 marking code V3.V

    RFMA7185

    Abstract: No abstract text available
    Text: RFMA7185 -2W 7.10 – 8.50 GHz Power Amplifier MMIC UPDATED 01/14/05 FEATURES • • • • 7.10– 8.50GHz Operating Frequency Range 33dBm Output Power at 1dB Compression 30.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @ each tone Pout 22dBm


    Original     		PDF RFMA7185 50GHz 33dBm -45dBc 22dBm RFMA7185

    EMP103B

    Abstract: No abstract text available
    Text: EMP103B DATA SHEET 6.4 – 8.0 GHz Power Amplifier MMIC ISSUED DATE: 02-24-04 FEATURES • • • 6.4 – 8.0 GHz Bandwidth 33dBm Output Power at 1dB Compression 14 dB Typical Power Gain APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C


    Original     		PDF EMP103B 33dBm 3000x2200microns 950mA EMP103B

    RF5110

    Abstract: No abstract text available
    Text: RF5111 DRAFT DRAFT 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and


    Original     		PDF 16-Pin, RF5111 33dBm 1700MHz 1950MHz DCS1800 PCS1900 DCS1800 DCS1900 RF5110

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


    Original     		PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000,

    SMD GP 113

    Abstract: MGF0921A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) SMD GP 113

    ED-1402

    Abstract: No abstract text available
    Text: +12 to +33dBm Limiter 50Ω Broadband VLM-63-2W+ 30 to 6000 MHz The Big Deal • Protection against up to 2.5 W of unwanted input signals • Wide frequency range, 30 MHz-6 GHz • Very fast recovery time, 5 nsec typ. CASE STYLE: FF704 Product Overview The VLM-63-2W+ reacts almost instantaneously to protect sensitive devices from power surges and other unwanted signals


    Original     		PDF 33dBm VLM-63-2W+ FF704 M130449 ED-14025/2 ED-1402

    MAX2032

    Abstract: tuned oscilator 1029-TC BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2039 MAX2041
    Text: KIT ATION EVALU E L B AVAILA 19-4965; Rev 0; 9/09 High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2032 high-linearity passive upconverter or downconverter mixer is designed to provide +33dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to


    Original     		PDF 650MHz 1000MHz MAX2032 33dBm 1250MHz MAX2029. tuned oscilator 1029-TC BPF filter rf JESD51-7 MABAES0029 MAX2029 MAX2039 MAX2041

    MASW-005100-1194

    Abstract: No abstract text available
    Text: MASW-005100-1194 HMIC SP5T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 38dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling


    Original     		PDF MASW-005100-1194 50MHz 26GHz 20GHz 33dBm MASW-005100-1194

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information February 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat


    Original     		PDF TGA1141-EPU 33dBm 34dBm 880mA 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information September 21, 2005 2W Q-Band High Power Amplifier TGA4046 Key Features • • • • • • • Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A 0.15 um 3MI pHEMT Technology


    Original     		PDF TGA4046 33dBm 32dBm TGA4046 46GHz.

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information August 26, 2002 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat


    Original     		PDF TGA1141-EPU 33dBm 34dBm 880mA 0007-inch

    MCH18

    Abstract: ZO13 0805HQ-5N6XJBB
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,


    Original     		PDF RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 MCH18 ZO13 0805HQ-5N6XJBB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary ES/EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package


    Original     		PDF ES/EMM5329ZW 33dBm SC-70 OT363 ES/EMM5329ZW

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information October 21, 2004 2W Q-Band High Power Amplifier TGA4046-EPU Key Features • • • • • • • Typical Frequency Range: 41 - 46 GHz Typical 33dBm Psat, 32dBm P1dB 17 dB Nominal Gain 16 dB Nominal Return Loss Bias: 6 V, 2 A


    Original     		PDF TGA4046-EPU 33dBm 32dBm TGA4046-EPU 46GHz.

    15 GHz high power amplifier

    Abstract: 8401 AMCOM Communications wireless AM131533SF-3H
    Text: The RF Power House 1.3 - 1.5 GHz - 2 Watt Power Amplifier AM131533SF-3H DESCRIPTION AMCOM’s AM131533SF-3H is a 3-stage power amplifier in aluminum housing with input and output SMA connectors. It has 30dB gain, 33dBm output power over the 1.35 to 1.5 GHz Band.


    Original     		PDF AM131533SF-3H AM131533SF-3H 33dBm 33dBm 15 GHz high power amplifier 8401 AMCOM Communications wireless

    DCS1800

    Abstract: EGSM900 GSM900 IPC-SM-782 RF3198 RF3198PCBA-41X
    Text: RF3198 DUAL-BAND GSM900/DCS POWER AMP MODULE Package Style: LFM, 48-Pin, 7mmx7mmx0.9mm DCS IN 37 Features „ „ „ „ „ „ BAND SELECT 40 Integrated VREG Complete Power Control Solution +35dBm GSM Output Power at 3.5V +33dBm DCS Output Power at 3.5V 60% GSM and 55% DCS EFF


    Original     		PDF RF3198 GSM900/DCS 48-Pin, 35dBm 33dBm EGSM900/DCS RF3198 203mm 330mm 025mm DCS1800 EGSM900 GSM900 IPC-SM-782 RF3198PCBA-41X

    SMM-280-2

    Abstract: No abstract text available
    Text: SMM-280-2 1.5-2.7 GHz, 2 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 33dBm Output Power - High Third Order Intercept, +43dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package Description Stanford Microdevices' SMM-280-2 is a high performance


    OCR Scan     		PDF SMM-280-2 33dBm 43dBm 1800mA 500mW

    Untitled

    Abstract: No abstract text available
    Text: SHF-0500 DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +33dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +43dBm Output 3rd Order Intercept Point - Low Cost Copper Tungsten Package


    OCR Scan     		PDF SHF-0500 33dBm 43dBm F-500 450mA)