35DBM Search Results

RF1131

Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features „ „ „ „ „ Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm

FPD750SOT89

Contextual Info: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively

ACCU-P0603

Abstract: 100uH SMD p0603 CGY96
Contextual Info: S IE M E N S GaAs MMIC CGY96 Prelim inary Datasheet *Power am plifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 % *Fully integrated 3 stage am plifier *Single supply operation *Power ramp control *lnput matched to 50 ohms, sim ple output match

Contextual Info: ERA-8SM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-8SM Reference Data:RDF-1211B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -35dBm, Icc = 36mA, Vd = 3.71V @Temperature = +25degC

microwave transmitter 10GHz

Abstract: LTC5588-1 J340 R2C marking 6SEPC680M LTC2630 LTC5588IPF-1 00J1 4J120 J1500
Contextual Info: LTC5588-1 200MHz to 6000MHz Quadrature Modulator with Ultrahigh OIP3 Description Features Frequency Range: 200MHz to 6000MHz n Output IP3: +31dBm Typical at 2140MHz Uncalibrated +35dBm Typical (User Optimized) n Single Pin Calibration to Optimize OIP3 n Low Output Noise Floor at 6MHz Offset:

14.5ghz

Abstract: FLM1414-3F
Contextual Info: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50W

LT5554

Abstract: LT5557
Contextual Info: LTC6412 800MHz, 31dB Range Analog-Controlled VGA FEATURES n n n n n n n n n n n n DESCRIPTION 800MHz –3dB Small-Signal Bandwidth Continuously-Adjustable Gain Control –14dB to +17dB Linear-in-dB Gain Range 35dBm OIP3 at 240MHz Across All Gain Settings 10dB Noise Figure at Maximum Gain

RF1131

Abstract: DS100406
Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features      Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm

fujitsu GHz gaas fet

Contextual Info: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: MMIC AP410 Product Features Application • 50 ~ 3500MHz • InGaP HBT MMIC • 35dBm Output IP3 • 19.5dB Gain • 20dBm P1dB • On Chip Active bias • Pb Free / RoHS Standard • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

Contextual Info: SIEMENS GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 % *Fully integrated 3 stage amplifier *Single supply operation *Power ramp control *lnput matched to 50 ohms, simple output match

Contextual Info: 2nd 3rd Harmonic vs. Pout MAX3509 65MHz 2:1 Pin=35dBmV 70 65 60 dBc 55 dbc2 dbc3 50 45 40 35 30 57 59 61 63 65 Pout dBc 67 69 71

Contextual Info: MMIC AP112 Product Features Application • 50 ~ 2200MHz • GaAs HBT MMIC • 35dBm Output IP3 • 17.6dB Gain • 19.8dBm P1 dB • Pb Free / RoHS Standard • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89 Description

portescap

Abstract: 4 phase stepper motor 7.5 stepper motor 96 L 2 phase stepper motor transistor 415 177 transistor datasheet 2-56 unc 500V g 001
Contextual Info: 35DBM-L 42.01±0.10 120.7±0.5 1.654±.004 4.75±.02 18.54 MAX 7.62±0.25 .730 Ø3.20±0.13 R3.96±0.13 Ø.126±.005 R.156±.005 2x (2x) .300±.010 10.41±0.25 Ø14.99±0.13 .410±.010 Ø.590±.005 BOTH ENDS Ø35.94 Ø1.415 30° MAX Ø3.45 REF Ø.136 REF

xm0830

Abstract: C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ
Contextual Info: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01C GaAs IC High Power SPDT Switch  Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications.  Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz

Contextual Info: MMIC AP410 Product Features Application • 50 ~ 3500MHz • InGaP HBT MMIC • 35dBm Output IP3 • 19.5dB Gain • 20dBm P1dB • On Chip Active bias • Pb Free / RoHS Standard • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 450MHz to 2500MHz 35dBm P3dB through all band 13dB typical small signal gain GaN HFET RFW2500H10-28 Application • HF/VHF/UHF Description The RFW2500H10-28 is designed for Wideband Power Amplifier application frequencies from 20 to 2500MHz.

Contextual Info: RFGA2012 RFGA2012 InGaP HBT Low Power Linear Amplifier InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, 8-Pin, 2mmx2mm Features High OIP3=35dBm at 1960MHz VBIAS  Low DC Power: 3.3V, 23mA  Low NF = 1.6dB at 1960MHz 7 RFOUT/VCC  50MHz to 3000MHz Operation

Contextual Info: RF5146 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Package Style: LFM, 48-Pin, 7 mm x 7 mm x 0.9 mm Features DCS/PCS IN 37 „ VRAMP Limiter „ Complete Power Control Solution „ „ „ „ +35dBm GSM Output Power at 3.5V

AAAA

Abstract: p0603 CGY96 marking aaa aaa marking code
Contextual Info: GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 %

Contextual Info: SIEMENS CGY 96 GaAs MMIC • • • • • • Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50 % Fully integrated 3 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

15 Pin VGA to AV Connector pin details

Abstract: flux transformer LT5557 vga connector 16 pin IDC MABAES0061 schematic diagram vga to av LTC2208 LTC6410-6 L6567 Transmission-Line Conversion Transformers
Contextual Info: LTC6412 800MHz, 31dB Range Analog-Controlled VGA FEATURES n n n n n n n n n n n n DESCRIPTION 800MHz –3dB Small-Signal Bandwidth Continuously-Adjustable Gain Control –14dB to +17dB Linear-in-dB Gain Range 35dBm OIP3 at 240MHz Across All Gain Settings 10dB Noise Figure at Maximum Gain

RF1131

Abstract: QFN 36 footprint antenna CDMA GPRS
Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features      Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm