31DBM Search Results

FMC141501-01

Abstract: k-band amplifier
Contextual Info: FMC141501-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

microwave transmitter 10GHz

Abstract: LTC5588-1 J340 R2C marking 6SEPC680M LTC2630 LTC5588IPF-1 00J1 4J120 J1500
Contextual Info: LTC5588-1 200MHz to 6000MHz Quadrature Modulator with Ultrahigh OIP3 Description Features Frequency Range: 200MHz to 6000MHz n Output IP3: +31dBm Typical at 2140MHz Uncalibrated +35dBm Typical (User Optimized) n Single Pin Calibration to Optimize OIP3 n Low Output Noise Floor at 6MHz Offset:

Contextual Info: RFAM9011 RFAM90111:1 SMT Transformer 450MHz TO 500MHz LOW NOISE/HIGH LINEARITY PA CONNECTORIZED MODULE Module, 2 RF Connectors, 1 DC Pin, 3 GND Pins 61.47 mm x 55.12 mm x 13.46 mm Features  5VOperation, 630mA  High Output P1dB>+31dBm  Low Noise Figure<0.5dB

Hitachi DSA002749

Contextual Info: 2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675 Z 1st. Edition Aug. 1998 Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline

2SK2794

Abstract: Hitachi DSA002780
Contextual Info: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-465 1st. Edition Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elecro Static Discharge.

12W SMD

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm

Contextual Info: AM183031WM-Q4-R Oct 2010 Rev 3 DESCRIPTION AMCOM’s AM183031WM-Q4-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 31dBm output power over the 1.8 to 3.4GHz band. This MMIC is in a plastic package with both RF and DC leads at the bottom

RF6509PCBA-410

Abstract: RF6509 900MHZ
Contextual Info: RF6509 Proposed 3.2V MODULE INTENDED TO INTEGRATE WITH 900MHZ AMR SOLUTIONS     1 RX Filter  31 30 29 2 Input V3S1 32 28 27 26 25 RX out/TX in Output V2S2 3 24 V1S2 4 23 V1S1 10 22 V2S1 5 Applications  LNA Vcc TX Output Power: 27dBm TX Gain: 31dBm

complementary symmetry amplifier 2-30 MHz ssb driver applications

Abstract: 513-MHz MGA-633P8 AT224-1 k 3366 57 LTC5584 LTC5588-1 LTC6409
Contextual Info: LTC5584 30MHz to 1.4GHz IQ Demodulator with IIP2 and DC Offset Control Description Features I/Q Bandwidth of 530MHz or Higher n High IIP3: 31dBm at 450MHz, 28dBm at 900MHz n High IIP2: 70dBm at 450MHz, 65dBm at 900MHz n User Adjustable IIP2 to >80dBm n User Adjustable DC Offset Null

Contextual Info: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC

0951P

Abstract: MGF0951P 60Ghz mitsubishi mgf
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm

FET K 1358

Abstract: 951P MGF0951P
Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> PRELIMINARY M G F0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm

MABAES0029

Abstract: MAX2043 MAX2043ETX MAX2043ETX-T MO220
Contextual Info: 19-3908; Rev 0; 12/05 KIT ATION EVALU E L B A IL AVA 1700MHz to 3000MHz High-Linearity, Low LO Leakage Base-Station Rx/Tx Mixer Features The MAX2043 high-linearity passive upconverter or downconverter mixer is designed to provide approximately +31dBm of IIP3, +67dBc of LO ± 2IF spurious

Contextual Info: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

FUJITSU SEMICONDUCTOR phemt

Abstract: mmic case styles power amplifier mmic
Contextual Info: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity,

Contextual Info: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm

968E

Contextual Info: AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm

MGF0913A

Contextual Info: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm

MGF0913A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm

blm11

Abstract: A601 S980D3
Contextual Info: High Frequency ICs High-Speed Transimpedance Amplifier Preliminary Data S980D3 Bipolar IC Features • data rate up to 0.622Gb/s • supply range from +4.5V to +5.5V • internal High-Pass-Filter • maximum input current 3 mApp -12 • input sensitivity -31dBm (BER=10 )

Contextual Info: GaAs MMIC Power Amplifier AM304031MM-TM DATASHEET Preliminary, January 2001 This document contains information on a product under development. The parametric information contains target parameters that are subject to change. DESCRIPTION AMCOM’s AM304031MM-TM is part of the GaAs MMIC power amplifier series. It has 34dB gain and 31dBm output

Contextual Info: RFSW6131 RFSW6131 F9999 SP3T SYMMETRIC SWITCH LF TO 6000MHZ Package: DFN, 8-pin, 1.5mm x 1.5mm V3 RF3 8 7 Features  LF to 6000MHz Operation  Symmetric SP3T  Low Loss: 0.5dB 2GHz  Isolation: 27dB (2GHz)  High IP3: 56dBm  P0.1dB: 31dBm (5V, 2.2GHz)