MACH ZEHNDER driver
Abstract: "InP HBT"
Text: SDA-3000 GaAs Distributed Amplifier SDA-3000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.100mmx1.450mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET 3 InGaP HBT Si BiCMOS Si CMOS
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SDA-3000
100mmx1
450mmx0
102mm
24GHz
SDA-3000
DS090603
MACH ZEHNDER driver
"InP HBT"
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GaAs MESFET amplifier
Abstract: SDA-5000 SDA5000 sda 5000 SDA-5000 GaAs Distributed Amplifier RFMD microwave amplifier RFMD microwave amplifier hbt 10GHZ GAAS
Text: SDA-5000 GaAs Distributed Amplifier SDA-5000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied 3 GaAs HBT GaAs MESFET 4 OUT VG2 2 InGaP HBT IN 1 SiGe BiCMOS
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SDA-5000
45mmx0
102mm
35GHz
SDA-5000
18dBm
100mA
DS090603
GaAs MESFET amplifier
SDA5000
sda 5000
SDA-5000 GaAs Distributed Amplifier
RFMD microwave amplifier
RFMD microwave amplifier hbt
10GHZ GAAS
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mmic distributed amplifier
Abstract: modulator driver mach zehnder mach zehnder
Text: SDA-2000 GaAs Distributed Amplifier SDA-2000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features GaAs HBT 3 InGaP HBT IN 1 9 GaAs pHEMT Si CMOS 5 7 6 VTI Si BJT ID EN TI AL :N DA Si BiCMOS
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SDA-2000
45mmx0
102mm
10GHz
410mA
DS090602
mmic distributed amplifier
modulator driver mach zehnder
mach zehnder
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NJG1108
Abstract: IP3 MARK
Text: NJRC’s GaAs MMIC Market’s Hottest LNA NJR NEWS 2006 66 NJG1107HB3/KB2 March 8, 2006 NJG1107 GaAs MMIC LNA NJRC is a leader in GaAs MMIC technology. Features General Description The NJG1107 is a Low Noise Amplifier GaAs MMIC designed for GPS, Digital cellular phone, and
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NJG1107HB3/KB2
NJG1107
NJG1108*
NJG1108
IP3 MARK
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cf sot-363
Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-363
SCT-598
cf sot-363
GaAs FET cfy 14
GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343
cfy 14
121B
801C
SCT-595
CFY30
TSSOP-10-2
CFY 18
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NJG1503
Abstract: NJG1504 NJG1506 NJG1507
Text: DISCONTINUE PRODUCTS Type No. FUNCTION DISCONTINUED TIME ALTERNATIVE PRODUCTS NJG1303 MEDIUM POWER AMPLIFIER GaAs MMIC MAY.1999 - NJG1503 SPDT SWITCH GaAs MMIC MAY.1999 NJG1506 NJG1504 SPDT SWITCH GaAs MMIC MAY.1999 NJG1507 -1-
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NJG1303
NJG1503
NJG1506
NJG1504
NJG1507
NJG1503
NJG1504
NJG1506
NJG1507
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GaAs pHEMT LOW SOT-343
Abstract: CLY 2
Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
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OT-363
VQFN-16-2
SCT-598
GaAs pHEMT LOW SOT-343
CLY 2
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Nec K 872
Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
Nec K 872
NE8500100-RG
NE8500100-WB
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Untitled
Abstract: No abstract text available
Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a
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SDA-5000
45mmx0
102mm
SDA-5000
35GHz
17dBm
100mA
35GHz,
SDA5000SB
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JESD22-A114
Abstract: SDA5000 SDA-5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier
Text: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a
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SDA-5000
45mmx0
102mm
SDA-5000
17dBm
100mA
35GHz,
SDA5000SB
DS091021
JESD22-A114
SDA5000
GaN Amplifier 20GHz
DC TO 20GHZ RF AMPLIFIER MMIC
DC 20GHz HBT amplifier
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NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
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MGFC39V4450A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V4450A
MGFC39V4450A
28dBm
10MHz
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MGFL45V1920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFL45V1920A
MGFL45V1920A
079MIN.
25deg
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mgf*S45V2527A
Abstract: MGFS45V2527A MGFS45V2527
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFS45V2527A
MGFS45V2527
079MIN.
25deg
mgf*S45V2527A
MGFS45V2527A
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bt 824
Abstract: BA01203
Text: MITSUBISHI SEMICONDUCTOR <GaAs HBT> BA01203 Specifications are subject to change without notice._ DESCRIPTION BA01203 is GaAs RF amplifier designed for CDMA/AMPS handheld-phone. GaAs HBT HYBRID IC OUTLINE DRAWING Unit : millimeters o
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BA01203
BA01203
580mA
31dBm(
820rnA(
824-849MHz
IS-95
00/Jul
bt 824
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Untitled
Abstract: No abstract text available
Text: bSHTfiSR 001fl07fi SOS • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7109A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION MGF7109A Is a GaAs monolithic microwave integrated circuits for OUTLINE DRAWING Unfcmlllimeters use in 900MHz band power amplifiers. FEATURES
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001fl07fi
MGF7109A
MGF7109A
900MHz
940MHz
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mitsubishi f
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed
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MGFC36V7785A
MGFC36V7785A
--51D
45dBc
Item-01
Item-51
mitsubishi f
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12api
Abstract: 251C MGFC36V5964A
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically
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FC36V5964A
MGFC36V5964A
45dBc
ltem-01
10MHz"
12api
251C
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NEC 1357
Abstract: Nec K 872
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
NEC 1357
Nec K 872
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amplifiers
Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
Text: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers
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GSO 69
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)
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MGFC36V6472A
MGFC36V6472A
45dBc
Item-01
Item-51
GSO 69
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FA01384
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01384 Specifications are subject to change without notice._ GaAs FET HYBRID IC DESCRIPTION FA01384 is GaAs 3-Stage RF amplifier designed for N-CDMA 1.9GHz band handheld-phone. FEATURES Low voltage Vd=3.2V
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FA01384
FA01384
1910MHz
600mA
1900MHz
IS-95
2288Mbps
99/Dec
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cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
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NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7785A 7.7-8.5GHZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The hermetically
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FC36V7785A
MGFC36V7785A
45dBc
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