GAAS AMPLIFIER Search Results

MACH ZEHNDER driver

Abstract: "InP HBT"
Contextual Info: SDA-3000 GaAs Distributed Amplifier SDA-3000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.100mmx1.450mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET 3 InGaP HBT Si BiCMOS Si CMOS

GaAs MESFET amplifier

Abstract: SDA-5000 SDA5000 sda 5000 SDA-5000 GaAs Distributed Amplifier RFMD microwave amplifier RFMD microwave amplifier hbt 10GHZ GAAS
Contextual Info: SDA-5000 GaAs Distributed Amplifier SDA-5000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied 3 GaAs HBT GaAs MESFET 4 OUT VG2 2 InGaP HBT IN 1 SiGe BiCMOS

mmic distributed amplifier

Abstract: modulator driver mach zehnder mach zehnder
Contextual Info: SDA-2000 GaAs Distributed Amplifier SDA-2000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features GaAs HBT 3 InGaP HBT IN 1 9 GaAs pHEMT Si CMOS 5 7 6 VTI Si BJT ID EN TI AL :N DA Si BiCMOS

NJG1108

Abstract: IP3 MARK
Contextual Info: NJRC’s GaAs MMIC Market’s Hottest LNA NJR NEWS 2006 66 NJG1107HB3/KB2 March 8, 2006 NJG1107 GaAs MMIC LNA NJRC is a leader in GaAs MMIC technology. Features General Description The NJG1107 is a Low Noise Amplifier GaAs MMIC designed for GPS, Digital cellular phone, and

bt 824

Abstract: BA01203
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> BA01203 Specifications are subject to change without notice._ DESCRIPTION BA01203 is GaAs RF amplifier designed for CDMA/AMPS handheld-phone. GaAs HBT HYBRID IC OUTLINE DRAWING Unit : millimeters o

cf sot-363

Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Contextual Info: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

NJG1503

Abstract: NJG1504 NJG1506 NJG1507
Contextual Info: DISCONTINUE PRODUCTS Type No. FUNCTION DISCONTINUED TIME ALTERNATIVE PRODUCTS NJG1303 MEDIUM POWER AMPLIFIER GaAs MMIC MAY.1999 - NJG1503 SPDT SWITCH GaAs MMIC MAY.1999 NJG1506 NJG1504 SPDT SWITCH GaAs MMIC MAY.1999 NJG1507 -1-

Contextual Info: bSHTfiSR 001fl07fi SOS • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7109A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION MGF7109A Is a GaAs monolithic microwave integrated circuits for OUTLINE DRAWING Unfcmlllimeters use in 900MHz band power amplifiers. FEATURES

mitsubishi f

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed

GaAs pHEMT LOW SOT-343

Abstract: CLY 2
Contextual Info: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

12api

Abstract: 251C MGFC36V5964A
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically

Nec K 872

Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

NEC 1357

Abstract: Nec K 872
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

amplifiers

Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
Contextual Info: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers

Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a

FA01384

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01384 Specifications are subject to change without notice._ GaAs FET HYBRID IC DESCRIPTION FA01384 is GaAs 3-Stage RF amplifier designed for N-CDMA 1.9GHz band handheld-phone. FEATURES Low voltage Vd=3.2V

JESD22-A114

Abstract: SDA5000 SDA-5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier
Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a

cd 1619 CP AUDIO

Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

NEC k 3654

Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7785A 7.7-8.5GHZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The hermetically

MGFC39V4450A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V4450A 4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFL45V1920A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic

mgf*S45V2527A

Abstract: MGFS45V2527A MGFS45V2527
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC45V6472A

Abstract: GF-38
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic