MGFL45V1920A Search Results

MGFL45V1920A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFL45V1920A		Mitsubishi	1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFL45V1920A		Mitsubishi	1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET		Scan	PDF

MGFL45V1920A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFL45V1920A MGFL45V1920A 079MIN. 25ohm GF-51
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFL45V1920A MGFL45V1920A 079MIN. -45dBc
MGFL45V1920A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFL45V1920A MGFL45V1920A 079MIN. 25deg
MGFL45V1920A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFL45V1920A MGFL45V1920A
Untitled Abstract: No abstract text available Text: < L/S band internally matched power GaAs FET > MGFL45V1920A 1.9 – 2.0 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFL45V1920A MGFL45V1920A 079MIN. -45dBc
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
MGFL45V1920A Abstract: No abstract text available Text: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N otice: This is n o t a final specification. Some param etric lim its are subject to change. • m \|y \| ^ h \| ■ m _ m mj a L 4 ¡ V I ^ ^ • 1.9-2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched	OCR Scan	PDF	MGFL45V1920A -45dBc 25deg