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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7176C N o tic e : T h is is n o t a fin a l s p e c ific a tio n S o m e p a ra m e tric lim its a re s u b je c t to ch a n g e . 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION


    OCR Scan     		PDF MGF7176C MGF7176C 28dBm 78GHz -46dBc 25MHz 87GHz -60dBc

    F384

    Abstract: FA01384 188GHz
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F A O 1 3 8 4 Specifications are subject to change without notice._ GaAs FET HYBRID IC DESCRIPTION FA01384 is GaAs 3-Stage RF amplifier designed for N-CDMA 1.9GHz band handheld-phone. FEATURES Low voltage


    OCR Scan     		PDF FA01384 1910MHz 600mA 1900MHz IS-95 2288Mbps 25MHz) 28dBm F384 188GHz

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7175C N o tic e : T h is is n o t a fin a l s p e c ific a tio n S o m e p a ra m e tric lim its a re s u b je c t to ch a n g e . 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION


    OCR Scan     		PDF MGF7175C MGF7175C 28dBm -46dBc 25MHz 99GHz -60dBc