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MGFS45V2527 Price and Stock

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Mitsubishi Electric MGFS45V2527A-01
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGFS45V2527A-01		5		1	1 $96 10 $96 100 $96 1000 $96 10000 $96	Buy Now
Quest Components	MGFS45V2527A-01		4			1 $104 10 $104 100 $104 1000 $104 10000 $104	Buy Now

MGFS45V2527 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFS45V2527		Mitsubishi	2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET		Original	PDF
MGFS45V2527A		Mitsubishi	2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET		Original	PDF

MGFS45V2527 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFS45V2527A MGFS45V2527A 079MIN. 25ohm GF-51	PDF
MGFS45v Contextual Info: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFS45A2527B MGFS45V2527B 079MIN. -45dBc MGFS45v	PDF
mgf*S45V2527A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F S 45V 252 7A is an internally im pedance-matched GaAs power FE T especially designed for use in 2.5 - 2.7 G H z band amplifiers.The hermetically sealed metal-ceram ic	OCR Scan	MGFS45V2527A -45dBc mgf*S45V2527A	PDF
mgf*S45V2527A Abstract: MGFS45V2527A MGFS45V2527 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2527A MGFS45V2527 079MIN. 25deg mgf*S45V2527A MGFS45V2527A	PDF
GAAS FET AMPLIFIER Abstract: mgf*S45V2527A MGFS45V2527 MGFS45V2527A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2527A MGFS45V2527 GAAS FET AMPLIFIER mgf*S45V2527A MGFS45V2527A	PDF
Contextual Info: < L/S band internally matched power GaAs FET > MGFS45A2527B 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFS45A2527B MGFS45V2527B 079MIN.	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The MG FS45V2527 is an internally im pedance matched GaAs power FET especially designed for use in 2 .5 -2 .7 GHz band amplifiers. The herm etically sealed m etal-ceramic	OCR Scan	MGFS45V2527 FS45V2527 -45dBc	PDF
MGFS45V2527 Abstract: f1270 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7	Original	MGFS45V2527 MGFS45V2527 -45dBc f1270	PDF
mgf*S45V2527A Abstract: MGFS45V2527A Contextual Info: < L/S band internally matched power GaAs FET > MGFS45V2527A 2.5 – 2.7 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFS45V2527A MGFS45V2527A 079MIN. -45dBc mgf*S45V2527A	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2527A MGFS45V2527 079MIN. -45dBc	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
Contextual Info: • bEMTûE'Î QQ1 7 ci 3 b 0 T 7 ■ MITSUBISHI SEMICONDUCTOR <GaAs FET> „«EUfcMN* M GFS45V2527 2 .5 ~ 2 .7 G H z BAND 2 8 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F S 4 5 V 2 5 2 7 is an internally impedance-matched GaAs power F E T especially designed for use in 2 . 5 —2 .7	OCR Scan	GFS45V2527	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF