Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45V6472A
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IM324
Abstract: high power FET transistor s-parameters MGFC45V6472A
Text: 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched
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27-March
MGFC45V6472A
MGFC45V6472A
25deg
IM324
high power FET transistor s-parameters
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MGFC45V6472A
Abstract: GF-38
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC45V6472A
MGFC45V6472A
-45dBc
120mA
10MHz
GF-38
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MGFC45V6472A
Abstract: No abstract text available
Text: 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched
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27-March
MGFC45V6472A
MGFC45V6472A
2GHz70
25deg
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MGFC45V6472A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC45V6472A
MGFC45V6472A
-45dBc
June/2004
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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Original
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MGFC45V6472A
MGFC45V6472A
-45dBc
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic
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Original
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MGFC45V6472A
MGFC45V6472A
-45dBc
25deg
June/2004
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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Untitled
Abstract: No abstract text available
Text: 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N o tic e : T his is n o t a fin a l s p e c ific a tio n . S o m e p a ra m e tric lim its are s u b je c t to c h a n g e MGFC45V6472A 6.4-7.2GHZ BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION
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MGFC45V6472A
GFC45V6472A
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