MGFC45V6472A Search Results

Contextual Info: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

IM324

Abstract: high power FET transistor s-parameters MGFC45V6472A
Contextual Info: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched

MGFC45V6472A

Abstract: GF-38
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N o tic e : T his is n o t a fin a l s p e c ific a tio n . S o m e p a ra m e tric lim its are s u b je c t to c h a n g e MGFC45V6472A 6.4-7.2GHZ BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION

MGFC45V6472A

Contextual Info: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched

MGFC45V6472A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
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