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Rochester Electronics LLC FSS234-TL-E NCH 4V DRIVE SERIES
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DigiKey	FSS234-TL-E	Bulk			307	1 - 10 - 100 - 1000 $0.98 10000 $0.98	Buy Now
Fix Supply BULK-FS-S2-3 Grade S2-20 Felt Sheet - 1/4" Th
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DigiKey	BULK-FS-S2-3	Bulk			1	1 $43.6 10 $43.6 100 $43.6 1000 $43.6 10000 $43.6	Buy Now
Fix Supply BULK-FS-S2-30 Grade S2-32 Felt Sheet - 3/8" Th
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DigiKey	BULK-FS-S2-30	Bulk			1	1 $861.68 10 $861.68 100 $861.68 1000 $861.68 10000 $861.68	Buy Now
Fix Supply BULK-FS-S2-31 Grade S2-32 Felt Sheet - 1/2" Th
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DigiKey	BULK-FS-S2-31	Bulk			1	1 $153.66 10 $153.66 100 $153.66 1000 $153.66 10000 $153.66	Buy Now
Fix Supply BULK-FS-S2-32 Grade S2-32 Felt Sheet - 1/2" Th
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DigiKey	BULK-FS-S2-32	Bulk			1	1 $1151.99 10 $1151.99 100 $1151.99 1000 $1151.99 10000 $1151.99	Buy Now

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FSS23 Datasheets (73)

Part	Manufacturer	Description	Datasheet Type	PDF
FSS23	Fagor	2 Amp. Surface Mounted Schottky Barrier Rectifier	Original	PDF
FSS23	Fagor	30 V, 2 A surface mounted schottky barrier rectifier	Original	PDF
FSS230D	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230D1	Fairchild Semiconductor	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS230D1	Fairchild Semiconductor	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230D1	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230D3	Fairchild Semiconductor	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS230D3	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230R	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230R1	Fairchild Semiconductor	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS230R1	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230R3	Fairchild Semiconductor	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230R3	Fairchild Semiconductor	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS230R3	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF

FSS230R4	Fairchild Semiconductor	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230R4	Fairchild Semiconductor	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS230R4	Intersil	8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS230R4	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
FSS232	Sanyo Semiconductor	Lithium-ion battery systems, notebook personal computers, A-V equipment, hand-held equipment	Original	PDF
FSS234	Sanyo Semiconductor		Original	PDF

FSS23 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3 Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	FSS23A4D, FSS23A4R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3	PDF
1E14 Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event	Original	FSS23A4D, FSS23A4R TA17698. 36MeV/mg/cm2 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1	PDF
1E14 Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3	PDF
1E14 Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3 Text: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	FSS234D, FSS234R 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3	PDF
1E14 Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	FSS23A0D, FSS23A0R 1E14 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,	Original	JANSR2N7401 FSS234R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS234R4 JANSR2N7401	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440	Original	JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss	PDF
FSS232 Abstract: S232 Text: Ordering number:ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS232] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain	Original	ENN6359 FSS232 FSS232] FSS232 S232	PDF
FSS238 Abstract: S238 PG2520 Text: Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS238] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate	Original	ENN6401 FSS238 FSS238] FSS238 S238 PG2520	PDF
schottky diode 100A Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214 Text: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32	Original	FSS12 FSS13 FSS14 FSS15* FSS16* DO214-AC FSS22 FSS23 FSS24 FSS25* schottky diode 100A DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214	PDF
S234 Abstract: No abstract text available Text: FSS234 N- Channel MOS Silicon FET DC-DC Converter Use TENTATIVE Features and Applications • Very Low ON-state resistance. • 4V drive. • High Speed Switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS	Original	FSS234 1200m FSS234 990804TM2fXHD S234	PDF
1E14 Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	FSS23A0D, FSS23A0R 1E14 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET	PDF
Untitled Abstract: No abstract text available Text: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	FSS23A4D, FSS23A4R 1-800-4-HARRIS	PDF
FSS232 Abstract: S232 Text: Ordering number : ENN6359 SANYO Semiconductors DATA SHEET FSS232 N-Channel Silicon MOSFET Load Switching Applications Features • Low ON resistance. · 4V drive. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage	Original	ENN6359 FSS232 1000mm2 FSS232 S232	PDF

Untitled Abstract: No abstract text available Text: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	JANSR2N7401 FSS234R4	PDF
1E14 Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET	PDF
s237 2.5 m Abstract: TA-228 FSS237 S237 Text: Ordering number:ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions • Ultralow ON resistance. · 2.5V drive. unit:mm 2116 [FSS237] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source	Original	ENN6149 FSS237 FSS237] s237 2.5 m TA-228 FSS237 S237	PDF
1E14 Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3 Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	FSS23A4D, FSS23A4R 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3	PDF
r4373 Abstract: No abstract text available Text: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSS230R4 JANSR2N7400 MIL-STD-750, MIL-S-19500, 500ms; r4373	PDF
fss230 Abstract: S230D Text: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	440C1 FSS230D, FSS230R fss230 S230D	PDF
Untitled Abstract: No abstract text available Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli	OCR Scan	FSS234D, FSS234R MIL-STD-750, MIL-S-19500, 100ms; 500ms;	PDF
Untitled Abstract: No abstract text available Text: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSS230D, FSS230R O-257AA MIL-S-19500	PDF
Untitled Abstract: No abstract text available Text: FSS230D, FSS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features • 8A, 200V, Package = 0.440Q TO-257AA • Total Dose - Meets Pre-Rad Specifications to 100K RAD Si • Single Event - Safe Operating Area Curve for Single Event Effects	OCR Scan	FSS230D, FSS230R 36MeV/mg/cm2 O-257AA to1E14 1-800-4-HARRIS	PDF
FSS234 Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V Text: JANSR2N7401 H A R R IS S E M I C O N D U C T O R Formerly FSS234R4 August 1998 File Number 4571 Features 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 50V , rp5^oN = 0 .6 0 0 £ i T h e D iscrete Products O peratio n of H arris S em ico n du cto r	OCR Scan	FSS234R4 1-800-4-HARRIS FSS234 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V	PDF

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Rochester Electronics LLC FSS234-TL-E

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FSS23 Datasheets (73)

FSS23 Datasheets Context Search

Rad Hard in Fairchild for MOSFET

1E14

1E14

1E14

1E14

Rad Hard in Fairchild for MOSFET

Rad Hard in Fairchild for MOSFET

FSS232

FSS238

schottky diode 100A

S234

1E14

Untitled

FSS232

Untitled

1E14

s237 2.5 m

1E14

r4373

fss230

Untitled

Untitled

Untitled

FSS234