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    2E12 Search Results

    2E12 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    GQM2195G2E121JB12D Murata Manufacturing Co Ltd High Q Chip Multilayer Ceramic Capacitors (＞100Vdc) for General Purpose Visit Murata Manufacturing Co Ltd
    GQM2195G2E121GB12D Murata Manufacturing Co Ltd High Q Chip Multilayer Ceramic Capacitors (＞100Vdc) for General Purpose Visit Murata Manufacturing Co Ltd
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    2E12 Price and Stock

    TDK Corporation C1608CH2E122J080AA

    CAP CER 1200PF 250V CH 0603
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    DigiKey C1608CH2E122J080AA Digi-Reel 3,830 1
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    Murata Manufacturing Co Ltd GCM31B5C2E123FX01L

    CAP CER 0.012UF 250V C0G 1206
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    DigiKey GCM31B5C2E123FX01L Digi-Reel 3,048 1
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    GCM31B5C2E123FX01L Cut Tape 3,048 1
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    TME GCM31B5C2E123FX01L 3,000
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    PEI-GENESIS KPT02E12-10SY

    CONN RCPT FMALE 10P GOLD SLD CUP
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    DigiKey KPT02E12-10SY Bag 1,548 1
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    PEI-GENESIS KPT2E12-8SEXA206

    CONN RCPT FMALE 8POS GOLD SOLDER
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    DigiKey KPT2E12-8SEXA206 Bulk 1,303 1
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    PEI-GENESIS KPTR02E12-8P

    CONN RCPT MALE 8P GOLD SLDR CUP
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    DigiKey KPTR02E12-8P Bag 591 1
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    Find more 2E12 price and stock on Findchips.com

    2E12 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2E12DM Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    2E12R9 Reliability DC/DC CONVERTERS - 9V OUTPUT Scan PDF
    2E12R9E Reliability DC/DC CONVERTERS - 9V OUTPUT Scan PDF

    2E12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    150LPI

    Abstract: No abstract text available
    Text: KE-2E12 エンコーダ ENCODERS KE-2E12-15/18/30 KE-2E12シリーズは業界で初めての薄さ h＝6.55ｍｍ を実現した「光学式エンコーダ」です。発光素子および受光 フォト を取り揃え


    Original     		KE-2E12 KE-2E12-15/18/30 KE-2E12 IC150180300LPI 150LPI/180LPI/300LPI 150LPI PDF

    Untitled

    Abstract: No abstract text available
    Text: ⭯ဳశቇᑼࠛࡦࠦ࡯࠳‫ޓޓ‬ENCODERS KE-2E12-15/18/30 150/180/300 LPI -''ࠪ࡝࡯࠭ߪᬺ⇇ߢೋ߼ߡߩ⭯ߐ J㧩㨙㨙 ࠍታ⃻ߒߚ‫ޟ‬శቇᑼࠛࡦࠦ࡯࠳‫⊒ޕߔߢޠ‬శ⚛ሶ߅ࠃ߮ ฃశࡈࠜ࠻+%ߦ⥄␠⵾ຠࠍណ↪ߒߡ߅ࠅ‫ޔ‬㜞ຠ⾰‫ޔ‬ᷣ


    Original     		KE-2E12-15/18/30 PDF

    Untitled

    Abstract: No abstract text available
    Text: KE-2E12 KE-2E12-15/18/30 *2 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. KE-2E12 KE-2E12-15/18/30 Duty/Gap Duty/Gap


    Original     		KE-2E12 KE-2E12-15/18/30 PDF

    Untitled

    Abstract: No abstract text available
    Text: KE-2E12F KE-2E12F-15/18/30 *2 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. KE-2E12F KE-2E12F-15/18/30 Duty/Gap Duty/Gap


    Original     		KE-2E12F KE-2E12F-15/18/30 PDF

    Untitled

    Abstract: No abstract text available
    Text: KE-2E12F エンコーダ ENCODERS KE-2E12F-15/18/30 KE-2E12Fシリーズは業界で初めての薄さ h＝6.55ｍｍ を実現した「光学式エンコーダ」です。発光素子および受 光フォト を取り揃


    Original     		KE-2E12F KE-2E12F-15/18/30 KE-2E12F IC150180300LPI 150LPI/180LPI/300LPI PDF

    Untitled

    Abstract: No abstract text available
    Text: ⭯ဳశቇᑼࠛࡦࠦ࡯࠳‫ޓޓ‬ENCODERS KE-2E12F-15/18/30 150/180/300 LPI ‫ޓع‬ᄖᒻኸᴺ‫&ޓ‬+/'05+105 -''(ࠪ࡝࡯࠭ߪᬺ⇇ߢೋ߼ߡߩ⭯ߐ J㧩㨙㨙 ࠍታ⃻ߒߚ‫ޟ‬శቇᑼࠛࡦࠦ࡯࠳‫⊒ޕߔߢޠ‬శ⚛ሶ߅ࠃ߮


    Original     		KE-2E12F-15/18/30 PDF

    0066E

    Abstract: 014e1
    Text: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance


    Original     		NE68518 7e-16 9e-13 4e-12 18e-12 2e-12 NE68518 13e-12 14e-12 0066E 014e1 PDF

    SP3002-04JTG

    Abstract: sp3002 IEC61000-4-4
    Text: Silicon Protection Arrays TM Low Capacitance ESD Protection Array RoHS Pb GREEN SP3002 Lead-Free/Green Series Description The SP3002 has ultra low capacitance rail-to rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin


    Original     		SP3002 SP3002-04JTG IEC61000-4-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSGL130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		FSGL130R FSGL130R PDF

    FSGYE130R4

    Abstract: Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3
    Text: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		FSGYE130R FSGYE130R FSGYE130R4 Rad Hard in Fairchild for MOSFET 2E12 FSGYE130D1 FSGYE130R3 PDF

    2E12

    Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
    Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		FSTYC9055D, FSTYC9055R 2E12 FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET PDF

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: NE68530 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC UNITS Parameter Units time seconds capacitance farads henries


    Original     		NE68530 7e-16 9e-13 40e-12 18e-12 2e-12 13e-12 14e-12 41e-9 PDF

    UPA833TF

    Abstract: q2.048
    Text: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


    Original     		UPA836TF 7e-16 9e-13 4e-12 18e-12 8e-16 8e-15 5e-16 796e-12 549e-12 UPA833TF q2.048 PDF

    1E14

    Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
    Text: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or


    Original     		FSPYC264R, FSPYC264F FSPYC264F 1E14 2E12 FSPYC264D1 FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET PDF

    4D4B44

    Abstract: 4D4B41 2SR1K 4D4B41A 4G4B44 3D4B41 4b4b41 4J4B41 4b4b44 3J4B41
    Text: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A


    OCR Scan     		2C10DM 2C12DM 2C16DM 2C20DM 2D4B41 2D02C41 2DG2Z41 4J4B41A 4J4B44 5B2C11 4D4B44 4D4B41 2SR1K 4D4B41A 4G4B44 3D4B41 4b4b41 4J4B41 4b4b44 3J4B41 PDF

    4B4B41

    Abstract: 4D4B44 4G4B41 4G4B44 4D4B41 3B4B41 4B4B44 3D4B41 T 4B4B41 4J4B41
    Text: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A


    OCR Scan     		2C10DM 2C12DM 2C16DM 2C20DM 2D4B41 2D02C41 2DG2Z41 4D4B41A 4D4B44 4G4B41 4B4B41 4D4B44 4G4B41 4G4B44 4D4B41 3B4B41 4B4B44 3D4B41 T 4B4B41 4J4B41 PDF

    4b4b41

    Abstract: 4D4B41 4G4B41 4J4B44 4B4B44 4D4B44 3D4B41 3B4B41 3G4B41 2D4B41
    Text: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A


    OCR Scan     		2C10DM 2C12DM 2C16DM 2C20DM 2D4B41 2D02C41 2DG2Z41 5BG2C11 -17MAX-I 12MAX 4b4b41 4D4B41 4G4B41 4J4B44 4B4B44 4D4B44 3D4B41 3B4B41 3G4B41 2D4B41 PDF

    4B4B41

    Abstract: 4G4B41 4D4B41 3B4B41 bs 140 T 4B4B41 3D4B41 4B4B44 4G4B44 3G4B41
    Text: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A


    OCR Scan     		2C10DM 2C12DM 2C16DM 2C20DM 2D4B41 2D02C41 2DG2Z41 25MAX 24MIN 4B4B41 4G4B41 4D4B41 3B4B41 bs 140 T 4B4B41 3D4B41 4B4B44 4G4B44 3G4B41 PDF

    4D4B44

    Abstract: 2SR1K T 4B4B41 4B4B44 638A 3B4B41 4G4B44 4b4b41 4J4B44 3D4B41
    Text: - M m 2C8DM 2C1QDM 2C12DM 2C16DM 2C20DM 2D4B41 2DG2C41 2DG2Z41 2E2DM 2E4DM 2E6DM 2E8DM 2E10DM 2E12DM 2E16DM 2E20DM 2G4B41 2GG2C41 2GG2Z41 2GWJ2C42 2J4B41 2JG2C41 2JG2Z41 2SR1K-2 2SR1K-4 3B4B41 3D4B41 3G4B41 3GWJ2C42 3J4B41 4B4B41 4B4B41A 4B4B44 4D4B41 4D4B41A


    OCR Scan     		2C10DM 2C12DM 2C16DM 2C20DM 2D4B41 2D02C41 2DG2Z41 5B2C11 5B2Z11 5BG2C11 4D4B44 2SR1K T 4B4B41 4B4B44 638A 3B4B41 4G4B44 4b4b41 4J4B44 3D4B41 PDF

    2VP5U9

    Abstract: 2E12R9 2vp5u9 lan-pac 2SP12U9 2VP12U9 2VI5U9 2E12 2E12R9E MTH/2E12R9
    Text: FE A TU R E S 9 IEEE 802.3 standards 0 Meets FCG Sec 15, Sub Part J, Â&B 9 Input/O utput isolated to IEEE 802.3 standards PC mountable, low profile ® Continuous short circuit protected, self recovering 2E12R9, 2Ë12R9E and 2E5R9 ® No derating to 71°C


    OCR Scan     		2E12R9, 2E12R9E to716C. 2VP5U9 2E12R9 2vp5u9 lan-pac 2SP12U9 2VP12U9 2VI5U9 2E12 MTH/2E12R9 PDF

    2E12R9

    Abstract: RELIABILITY INC 2vp5u9 lan-pac 2VP12U9 2E12R9E 2SP12U9 QDDG101 2vp5u9
    Text: H B8Sn&9SSSSB88BBSa R E L IA B IL IT Y IN C / POWER 5 SE D • 7bS2610 QOaDD'i? S FEATURES • IE E E 802.3 standards 6 Meets F GO Sec 15, Sub Part J, A&B • In p u t/O u tp u t isolated to IËEÉ 802.3 standards PC mountable, low profile • -Continuous short circuit p rote cte d ,


    OCR Scan     		0Q00DGi7 2E12R9, 12R9E 10base 2E12R9 RELIABILITY INC 2vp5u9 lan-pac 2VP12U9 2E12R9E 2SP12U9 QDDG101 2vp5u9 PDF

    1h32

    Abstract: diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A
    Text: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V, 10 Am p, P-Channel, Radiation Hardened Power M O SFET In A Herm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package


    OCR Scan     		OM913QSTC 1000K OM9130S O-257AA 534-5776FAX b7flT073 nDDm33 1h32 diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A PDF

    2E12R9

    Abstract: pm7102 2vp5u9 EE 35 transformer 10BASE5 PE-64107 valor pm7102
    Text: Am7996 Advanced Micro Devices IEEE 802.3/Ethernet/Cheapernet Transceiver DISTINCTIVE CHARACTERISTICS • ■ ■ Compatible with Ethernet Version 2 and IEEE 802.310BASE5 and 10BASE2 specifications Pin-selectable SQE Test Heartbeat option Internal Jabber Controller prevents excessive


    OCR Scan     		Am7996 310BASE5 10BASE2 Am7996 10BASE5) 07506D-010A 07506D-011A 07506D-014B 2E12R9 pm7102 2vp5u9 EE 35 transformer 10BASE5 PE-64107 valor pm7102 PDF