FSYC160R Search Results

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs juiy 1998 Features Description • 70A, 100V, ros ON = 0-022Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s