FSYC160R1 Search Results

FSYC160R1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSYC160R1		Fairchild Semiconductor	Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET		Original	PDF
FSYC160R1		Intersil	Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs		Original	PDF

FSYC160R1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2E12 Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically	Original	PDF	FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
2E12 Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
2E12 Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Untitled Abstract: No abstract text available Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	PDF	FSYC160D, FSYC160R FSYC160R
Untitled Abstract: No abstract text available Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs juiy 1998 Features Description • 70A, 100V, ros ON = 0-022Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s	OCR Scan	PDF	FSYC160D, FSYC160R 0-022Q 36MeV/mg/cm2