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    1E14 Search Results

    1E14 Result Highlights (2)

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    MK1491E-14RLF Renesas Electronics Corporation OPTi ACPI Firestar Clock Source Visit Renesas Electronics Corporation
    MK1491E-14RLFTR Renesas Electronics Corporation OPTi ACPI Firestar Clock Source Visit Renesas Electronics Corporation
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    1E14 Price and Stock

    TE Connectivity RQ73C1E143RBTD

    RES 143 OHMS 0.1% 1/16W 0402
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    DigiKey RQ73C1E143RBTD Digi-Reel 14,850 1
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    RQ73C1E143RBTD Cut Tape 14,850 1
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    RQ73C1E143RBTD Reel 10,000 5,000
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    Master Electronics RQ73C1E143RBTD
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    PEI-GENESIS CA3101E14S-7SB

    CONN RCPT FMALE 3P SILV SLDR CUP
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    DigiKey CA3101E14S-7SB Bag 401 1
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    CA3101E14S-7SB Bag 81 1
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    PEI-GENESIS CA3101E14S-9SB15

    CONN RCPT FMALE 2P SILVER CRIMP
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    DigiKey CA3101E14S-9SB15 Bag 253 1
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    PEI-GENESIS CA3101E14S-6PF42

    CONN RCPT 6POS INLINE W/PINS
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    DigiKey CA3101E14S-6PF42 Bag 214 1
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    PEI-GENESIS KPSE1E14-12SDZ

    CONN RCPT FMALE 12POS GOLD CRIMP
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    DigiKey KPSE1E14-12SDZ Bag 99 1
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    1E14 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 8730

    Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240 PDF

    ad8561 precautions

    Abstract: AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16
    Text: a Dual 7 ns Single Supply Comparator AD8598 FEATURES 7 ns Propagation Delay Single Supply Operation: +3 V to +10 V Low Power Symmetrical Layout Latch Function TSSOP Packages PIN CONFIGURATIONS N-16, RU-16 and R-16A OBS APPLICATIONS Clock Recovery and Clock Distribution


    Original     		AD8598 RU-16 R-16A MAX912 16-Lead R-16A) ad8561 precautions AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16 PDF

    radix-8 FFT

    Abstract: DBGA KD 472 M mov CMAC A15B2 sc sf 12A H4 17ER CI23 honeywell hx3000 HX3000
    Text: DSP Architectures RHDSP24 Radiation Hardened Scalable DSP Chip Transform Your WorldTM Data Sheet Real 24 PORT A Imag 24 RHDSP24 Imag 24 24 24 X INPU TB US Y INPUT BU S O U TP U TB US 24 48 Imag 24 Scheduler/ Controller X Y Memory A 24 Memory B 24 System Controls


    Original     		RHDSP24 RHDSP24-Y-75-M DSPA-RHDSP24DS radix-8 FFT DBGA KD 472 M mov CMAC A15B2 sc sf 12A H4 17ER CI23 honeywell hx3000 HX3000 PDF

    in4577

    Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
    Text: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient


    Original     		150mA CLM2950 CLM2951 LP2950/LP2951 CLM2951 1E-28 in4577 CLM2950ACN-X CLM2950CN-X CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X PDF

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO PDF

    UT8MR8M8

    Abstract: No abstract text available
    Text: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet May 14, 2012 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times


    Original     		64Megabit 64-pin UT8MR8M8 PDF

    UT8MR8M8

    Abstract: aeroflex sram ecc
    Text: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet March 15, 2012 FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times


    Original     		64Megabit 64-pin 097in UT8MR8M8 aeroflex sram ecc PDF

    UT200SPW

    Abstract: No abstract text available
    Text: Standard Products UT200SpW4RTR 4-Port SpaceWire Router Preliminary Datasheet April 13, 2011 www.aeroflex.com/SpaceWire FEATURES  Operational environment: - Total-dose: 100 krad Si - Latchup immune (LET >100 MeV-cm2/mg)  Packaging options: - 255-lead CLGA


    Original     		UT200SpW4RTR 200Mbps ECSS-E-ST-50-12C 50MHz UT200SPW PDF

    Q1104

    Abstract: NE72218
    Text: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1


    Original     		NE72218 003pF 1e-14 4e-12 27e-12 1e-10 85e-12 055e-12 2e-10 24-Hour Q1104 NE72218 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE429M01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD_PKG LD DRAIN LG_PKG 0.67nH 0.5nH Q1 LG GATE 0.62nH 0.5nH CCD_PKG 0.1pF CDX 0.14pF LS 0.16nH CGS_PKG 0.11pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters


    Original     		003pF NE429M01 1e-14 4e-12 07e-12 1e-10 04e-12 24-Hour PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE722S01 CGD_PKG SCHEMATIC 0.001pF Ldx DRAIN Q1 Lgx GATE Rgx 1 ohms 0.5nH Rdx 1 ohms 0.71nH Lsx 0.13nH CGS_PKG 0.08pF CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC RD ALPHA


    Original     		NE722S01 001pF 2e-10 1e-14 3e-12 19e-12 92e-12 05e-12 150e-6 second2/2002 PDF

    1E-14

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE434S01 CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.62nH Rdx 3 ohms Rgx 0.72nH 3 ohms Lsx 0.07nH CGS_PKG 0.05pF CDS_PKG 0.06PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.806


    Original     		NE434S01 001pF 1e-14 7e-12 12e-12 42e-12 04e-12 24-Hour PDF

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSPL234D1 FSPL234F FSPL234R FSPL234R3
    Text: FSPL234R, FSPL234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		FSPL234R, FSPL234F FSPL234F Rad Hard in Fairchild for MOSFET 1E14 2E12 FSPL234D1 FSPL234R FSPL234R3 PDF

    1E14

    Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET
    Text: FSPYC264R, FSPYC264F Data Sheet 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or


    Original     		FSPYC264R, FSPYC264F FSPYC264F 1E14 2E12 FSPYC264D1 FSPYC264R FSPYC264R3 iodine Rad Hard in Fairchild for MOSFET PDF

    1E14

    Abstract: 2E12 FRS244D FRS244H FRS244R Rad Hard in Fairchild for MOSFET
    Text: FRS244D, FRS244R, FRS244H 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 250V, RDS on = 0.415Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRS244D, FRS244R, FRS244H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 1E14 2E12 FRS244D FRS244H FRS244R Rad Hard in Fairchild for MOSFET PDF

    1E14

    Abstract: 2E12 FSGL234D1 FSGL234R3 FSGL234R4
    Text: FSGL234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.


    Original     		FSGL234R FSGL234R 1E14 2E12 FSGL234D1 FSGL234R3 FSGL234R4 PDF

    FSGYC260R3

    Abstract: FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET
    Text: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low


    Original     		FSGYC260R FSGYC260R3 FSGYC260R4 1E14 2E12 FSGYC260D1 FSGYC260R Rad Hard in Fairchild for MOSFET PDF

    1E14

    Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET
    Text: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original     		FSL23A0D, FSL23A0R 1E14 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3 Rad Hard in Fairchild for MOSFET PDF

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
    Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772 PDF

    1E14

    Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
    Text: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRM230D, FRM230R, FRM230H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET PDF

    LSE B3 transformer

    Abstract: smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4
    Text: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or


    Original     		FSGYC264R FSGYC264R LSE B3 transformer smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4 PDF

    FRF9250R

    Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
    Text: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		FRF9250D, FRF9250R, FRF9250H -200V, O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRF9250R 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


    Original     		JANSR2N7272 1000K O-205AF 254mm) PDF

    1h32

    Abstract: diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A
    Text: OM913QSTC RADIATION HARDENED POWER MOSFETS IN HERMETIC ISOLATED PACKAGE P-CHANNEL 100V, 10 Am p, P-Channel, Radiation Hardened Power M O SFET In A Herm etic Metal Package FEATURES • • • • • • Rated As Radiation Hard Avalanche Energy Rated Isolated Hermetic Package


    OCR Scan     		OM913QSTC 1000K OM9130S O-257AA 534-5776FAX b7flT073 nDDm33 1h32 diode 48 TO-257AA Package 1E14 2E12 OM9130STC LD102A PDF