2SK246
Abstract: TOSHIBA 2SK246 2SK2463
Text: 2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm • High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)
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2SK246
2SK246
TOSHIBA 2SK246
2SK2463
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sfn065d
Abstract: itron 406
Text: 8368602 SOL ITRON DEVICES SFN065D INC 01990 SWITCH MOS PA CKA G E TO-3 IDM VGS PD XL T J oper T . stg UNITS Voltage, Drain to Source Drain Current, Clamped Inductive XDSS V 010 G fs VGS(th). IGSS C ISS CRSS coss ^d(on) t r td ( o f f ) Cf 16 W 20 A -55 to +150
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T-39-11
SFN065D
5M6-24UNF-2A
P06fTKM
eA03AT
sfn065d
itron 406
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TF414T5G
Abstract: No abstract text available
Text: Ordering number : EN*A2259A TF414 Advance Information http://onsemi.com N-Channel JFT 40V, 50 to 130A, 0.11mS, SOT-883 Features Electrical Connection • Small IGSS : max 500pA VGS= 20V, VDS=0V Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz)
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A2259A
TF414
OT-883
500pA
A2259-3/3
TF414T5G
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2SK546
Abstract: No abstract text available
Text: Ordering number:EN1790B N-Channel Junction Silicon FET 2SK546 Impedance Converter Applications Applications Package Dimensions • Impedance conversion. · Infrared sensor. unit:mm 2034A [2SK546] 4.0 Features 3.0 · Low IGSS. · Small Ciss. 2.2 15.0 0.6 1.8
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EN1790B
2SK546
2SK546]
2SK546
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Untitled
Abstract: No abstract text available
Text: KSK117 SILICON N-CHANNEL JUNCTION FET LOW REQUENCY LOW NOISE AMP TO-92 HighYfs: 15ms TYP High Input Impedance: IGSS= -1nA Low Noise, NF =1dB (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDS IG PC TJ T STG Gate-Drain Voltage Gate-Current
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KSK117
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SLA5058
Abstract: No abstract text available
Text: SLA5058 Absolute maximum ratings Symbol N-channel General purpose Ta=25°C Ratings Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) VDSS 150 V +20, –10 V ID ±7A ID (pulse) ±15 (PV≤1ms, duty≤1%) A EAS* 100 mJ 5 (Ta=25°C, with all circuits operating, without heatsink)
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SLA5058
SLA5058
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2SK3654
Abstract: 2SK365
Text: 2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
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2SK365
2SK3654
2SK365
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SLA5015
Abstract: No abstract text available
Text: SLA5015 P-channel General purpose Absolute maximum ratings External dimensions A Electrical characteristics Ta=25°C Unit Symbol –60 V V(BR)DSS –60 20 V IGSS ID 4 A IDSS ID(pulse) 8 (PW≤1ms) A VTH –2.0 1.6 Ratings VDSS VGSS PT 5 (Ta=25°C, with all circuits operating, without heatsink)
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SLA5015
SLA5015
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SLA5001
Abstract: No abstract text available
Text: SLA5001 Absolute maximum ratings N-channel External dimensions A General purpose Electrical characteristics Ta=25°C Unit Symbol 100 V V(BR)DSS 100 ±20 V IGSS ID ±5 A IDSS ID(pulse) ±10(PW≤1ms) A VTH 2.0 2.4 Ratings VDSS VGSS EAS* PT 30 mJ Re(yfs) 5 (Ta=25°C, with all circuits operating, without heatsink)
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SLA5001
SLA5001
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SLA5041
Abstract: No abstract text available
Text: SLA5041 Absolute maximum ratings N-channel General purpose Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VDSS VGSS ID 200 ±20 ±10 ±40 (PW≤1ms, Du≤1%) 120 V V A A mJ W W °C/W °C/W Vrms °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON)
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SLA5041
SLA5041
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SLA5026
Abstract: No abstract text available
Text: SLA5026 Absolute maximum ratings N-channel Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VDSS VGSS ID 100 ±20 ±10 ±40 (PW≤1ms) 70 V V A A mJ W W °C/W °C/W Vrms °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) ID(pulse) EAS* PT θ j-a θ j-c
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SLA5026
SLA5026
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STA400
Abstract: STA501A ID25A
Text: STA501A Absolute maximum ratings Symbol N-channel General purpose Ta=25°C Ratings External dimensions D Unit Symbol 60 V V(BR)DSS ±10 V IGSS ID ±5 A IDSS ID(pulse) ±20 (PW≤100µs, Du≤1%) A VTH 1.0 Re(yfs) 2.0 V ID=250µA, VGS=0V VGS=±10V 250 µA
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STA501A
STA400
PW100
100mA
STA400
STA501A
ID25A
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2sk3622
Abstract: TOSHIBA 2SK362 2SK362 2sk3624
Text: 2SK362 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK362 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
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2SK362
2sk3622
TOSHIBA 2SK362
2SK362
2sk3624
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2sk3672
Abstract: 2SK3673 toshiba audio power amplifier 2SK367
Text: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)
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2SK367
2sk3672
2SK3673
toshiba audio power amplifier
2SK367
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SDK04
Abstract: No abstract text available
Text: SDK04 N-channel General purpose Absolute maximum ratings External dimensions E Ta=25°C Unit Symbol 100 V V(BR)DSS 100 ±20 V IGSS ID ±2 A IDSS ID(pulse) ±5 (PW≤100µs, Du≤1%) A VTH 1.0 EAS* 2.7 mJ Re(yfs) 1.5 PT 3 (Ta=25°C, 4-circuit operation) W
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SDK04
PW100
160itions
100mA
SDK04
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2259 TF414 Advance Information http://onsemi.com N-Channel JFT 40V, 50 to 130A, 0.11mS, SOT-883 Features Electrical Connection • Small IGSS : max 500pA VGS= 20V, VDS=0V Small Ciss : typ 0.7pF (VDS=10V, VGS=0V, f=1MHz)
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A2259
TF414
OT-883
500pA
TF414T5G
A2259-3/3
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Untitled
Abstract: No abstract text available
Text: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description
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IRFC18N50KB
O-220
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TP4119
Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Text: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*
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0D03bQ0
TP3369
TP3370
TP3458
91-ao
O-226AA/STYLES
TP4119
2n3819 field-effect transistors
nj132
TP3823
TP4392
2N3819
NJ16
NJ32
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6N60
Abstract: 6n60 equivalent 6n60 data
Text: E 6N60 VDSS=600V; ID=6.0A; RDS ON =1.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description DraintoSource Breakdown Voltage
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100nA
6N60
6n60 equivalent
6n60 data
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2n5248
Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640
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2N5555
2N5638
2N5639
2N5640
PN4360
PN5033
2n5248
PF5101
2N5248 equivalent
2N5247
PN4857
PN4858
U1897
2N5245
PF5301-2
2N5460
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3SK242
Abstract: MGF1100 3SK246 3SK243 3SK244 tv tuner 3SK245 470M M91F gaas fet vhf uhf
Text: - 184 - f € m £ tt € m & m & * 1 * K # X fê Æ: S r- V m * à (V) * * * (A) P d/ P c h (W> Igss (max) (A) Vg s (V) fô & fê V pi (min) (max) V g 2S (max) (V) (A) (A) (V) te ìf (Ta=25'C) Vp2 (max) (V) gm (min) (typ) V d s (S) 1 (si (V) Vg i s (V)
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3SK242
3SK243
3SK244
3SK245
3SK246
15dBmin/17dBtyp
900MHz
3SK244
20dBmin/23dBtyp
MGF1100
tv tuner
470M
M91F
gaas fet vhf uhf
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1RF540
Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Text: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)
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1RF522
O-220AB
RF523
IRF530
IRF630
IRF631
T0-220AB
1RF540
1RF620
1RF640
IRF614
IRF540
RF543
1RF530
LM3661TL-1.25
IRF533
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FKV560S
Abstract: No abstract text available
Text: MOS FET FKV560S under development 76 ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz
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FKV560S
O220S
FKV560S
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FKV460
Abstract: FM20
Text: MOS FET FKV460 under development 72 Electrical Characteristics Test Conditions V(BR) DSS ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss
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FKV460
FKV460
FM20
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