2SK367 Search Results

K3670

Abstract: TRANSISTOR K3670 2SK3670
Contextual Info: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)

2sk3672

Abstract: 2SK3673 toshiba audio power amplifier 2SK367
Contextual Info: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

Contextual Info: 2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

2sk3679

Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679 equivalent MOSFET 2sk3679 Data sheet 2SK3679-01 2SK3679-01MR equivalent
Contextual Info: 2SK3679-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2SK367

Abstract: vgds 100v
Contextual Info: TOSHIBA 2SK367 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK367 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT Unit in mm APPLICATIONS 4.2M AX • — High Breakdown Voltage : VGDS“ —100V Min. • High Input Impedance : I(jgg= —l.OnA (Max.) (V Q g = —80V)

2SK3673-01MR equivalent

Abstract: MOSFET 700V 10A 2SK3673
Contextual Info: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

2SK367

Contextual Info: 2SK367 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications • Unit: mm High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

2SK3670

Abstract: K3670 VDD-120
Contextual Info: 2SK3670 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3670 ○ リレー駆動DC−DC コンバータ用 単位: mm z 2.5V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 1.0 Ω (標準) z 順方向伝達アドミタンスが高い。

2SK3678-01

Abstract: n-channel 900v 9a
Contextual Info: 2SK3678-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3674-01L

Abstract: FUJI ELECTRIC fuji electric mark MT5F12615
Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3674-01L,S,SJ 900V/2.0Ω/7A T-PACK 1) Package L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

2SK367

Contextual Info: T O S H IB A 2SK367 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK367 FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT Unit in mm APPLICATIONS • • 4.2MAX. —H — 1 1 1 I 1 High Breakdown Voltage : VQDg= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (V Q g= —80V)

Contextual Info: T O SH IB A 2SK367 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK367 Unit in mm FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT APPLICATIONS • • • High Breakdown Voltage : Vg d S = —100V Min. High Input Impedance : lGSS~ —l-0nA(Max.) (VQg= —80V)

2SK3679

Abstract: mosfet 2sk3679 2SK3679-01MR 2SK3679-01
Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3679-01MR 900V/1.58Ω/9A 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current

Contextual Info: 2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

VGS-30V

Abstract: 2SK3675-01 2sk3675
Contextual Info: 2SK3675-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 11.6±0.2 Applications Switching regulators UPS Uninterruptible Power Supply

K3670

Abstract: TRANSISTOR K3670 2SK3670 k367
Contextual Info: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)

2SK3675-01

Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3675-01 900V/2.0Ω/7A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current

2SK3678-01

Abstract: 1589a
Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3678-01 900V/1.58Ω/9A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current

2SK3678-01

Abstract: 2SK3678
Contextual Info: 2SK3678-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3675-01

Abstract: 900v mosfet 101MH
Contextual Info: 2SK3675-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 11.6±0.2 Applications Switching regulators

TRANSISTOR K3670

Abstract: K3670 K3670 transistor 2SK3670 K367
Contextual Info: 2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.)

2SK3676-01L

Contextual Info: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3676-01L,S,SJ 900V/2.5Ω/6A 1) Package T-PACK L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

2SK3673-01MR equivalent

Abstract: 2SK3673-01MR 2SK3673 MOSFET 700V 10A MOSFET 700V 4A mosfet 350v 10A 700v 10A mosfet
Contextual Info: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators