FSS23A4D1 Search Results

FSS23A4D1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FSS23A4D1		Fairchild Semiconductor	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET		Original	PDF
FSS23A4D1		Fairchild Semiconductor	7A, 250V, 0.460 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs		Original	PDF
FSS23A4D1		Intersil	7A, 250V, 0.460 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs		Original	PDF

FSS23A4D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3 Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSS23A4D, FSS23A4R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
1E14 Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event	Original	PDF	FSS23A4D, FSS23A4R TA17698. 36MeV/mg/cm2 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
Untitled Abstract: No abstract text available Text: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSS23A4D, FSS23A4R 1-800-4-HARRIS
1E14 Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3 Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSS23A4D, FSS23A4R 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
Untitled Abstract: No abstract text available Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS23A4D, FSS23A4R O-257AA MIL-S-19500
Untitled Abstract: No abstract text available Text: h a f r r is FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEG R Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS23A4D, FSS23A4R 1-800-4-HARRIS
Untitled Abstract: No abstract text available Text: SSÌ h a r fr is U S E M I C O N D U C T O R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS23A4D, FSS23j\4R MIL-STD-750, MIL-S-19500, 100ms; 500ms;