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    FLL600IQ Search Results

    FLL600IQ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL600IQ-2 Fujitsu GaAs FET Original PDF
    FLL600IQ-2C Eudyna Devices L-Band High Power GaAs FET Original PDF
    FLL600IQ-3 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF

    FLL600IQ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-2C FLL600IQ-2C

    FLL600IQ-2C

    Abstract: FET 748
    Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-2C FLL600IQ-2C FET 748

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    FLL600IQ-3

    Abstract: No abstract text available
    Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-3 FLL600IQ-3

    FLL600IQ-2

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 ABSOLUT165

    Eudyna Devices power amplifiers

    Abstract: FLL600IQ-2 eudyna GaAs FET Amplifier
    Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 Commu4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier

    Fujitsu GaAs FET Amplifier design

    Abstract: FLL600IQ-2C
    Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-2C FLL600IQ-2C Fujitsu GaAs FET Amplifier design

    Fujitsu GaAs FET Amplifier design

    Abstract: Fujitsu GaAs FET Amplifier fujitsu gaas fet
    Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-3 FLL600IQ-3 FCSI0598M200 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier fujitsu gaas fet

    FLL600IQ-3

    Abstract: No abstract text available
    Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-3 FLL600IQ-3 FCSI0598M200

    FLL600IQ-3

    Abstract: No abstract text available
    Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-3 FLL600IQ-3 hig4888

    FLL600IQ-2

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 FCSI0597M200

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz

    FLL600IQ-2C

    Abstract: No abstract text available
    Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-2C FLL600IQ-2C FCSI1199M200

    L-Band

    Abstract: 842 FET
    Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 L-Band 842 FET

    L-Band

    Abstract: Eudyna Devices power amplifiers
    Text: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-3 FLL600IQ-3 L-Band Eudyna Devices power amplifiers

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		PDF FLL600IQ-2 FLL600IQ-2 FCSI0597M200

    FLL600IQ-2C

    Abstract: Fujitsu GaAs FET Amplifier
    Text: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that


    Original     		PDF FLL600IQ-2C FLL600IQ-2C FCSI1199M200 Fujitsu GaAs FET Amplifier

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    fujitsu l-band power fets

    Abstract: No abstract text available
    Text: çO FLL600IQ-3 *"UJI * L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Broad Frequency Range: 2000 to 2700 MHz. High PAE: 43%. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL600IQ-3 FLL600IQ-3 the75 fujitsu l-band power fets

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    OCR Scan     		PDF FLL600IQ-2 FLL600IQ-2 FCSI0597M200

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-3 - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation.


    OCR Scan     		PDF FLL600IQ-3 FLL600IQ-3 FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLL600IQ-2 rU JII b U L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design that


    OCR Scan     		PDF FLL600IQ-2 FLL600IQ-2

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet