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    FLC107WG Search Results

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    FLC107WG Price and Stock

    Sumitomo Electric Device Innovations Usa FLC107WG

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    FLC107WG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLC107WG
    Fujitsu C-Band Power GaAs FET Original PDF

    FLC107WG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fujitsu gaas fet

    Abstract: FLC107WG
    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet PDF

    fujitsu gaas fet

    Abstract: FLC107WG
    Contextual Info: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package


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    FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet PDF

    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG PDF

    fujitsu gaas fet

    Abstract: FLC107WG
    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG FCSI0598M200 fujitsu gaas fet PDF

    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: hadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG FCSI0598M200 PDF

    FLC107WG

    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG Te4888 PDF

    C-Band Power GaAs FET

    Abstract: FLC107WG
    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG Temp71 C-Band Power GaAs FET PDF

    flc107

    Contextual Info: FLC107WG C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general


    Original
    FLC107WG FLC107WG flc107 PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original
    FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF