Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    F08S60S Search Results

    SF Impression Pixel

    F08S60S Price and Stock

    onsemi FFPF08S60SNTU

    DIODE GEN PURP 600V 8A TO220F-2L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FFPF08S60SNTU Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Newark FFPF08S60SNTU Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics FFPF08S60SNTU 1
    • 1 $0.4861
    • 10 $0.4861
    • 100 $0.4569
    • 1000 $0.4132
    • 10000 $0.4132
    		Buy Now

    onsemi FFPF08S60STTU

    DIODE GEN PURP 600V 8A TO220F-2L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FFPF08S60STTU Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Avnet Americas FFPF08S60STTU Tube 0 Weeks, 2 Days 1,021
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6321
    		Buy Now
    Bristol Electronics FFPF08S60STTU 950
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Flip Electronics FFPF08S60STTU 31,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Flip Electronics FFPF08S60STTU

    DIODE GEN PURP 600V 8A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FFPF08S60STTU Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.67
    • 10000 $0.67
    		Buy Now

    Fairchild Semiconductor Corporation FFPF08S60STU

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FFPF08S60STU 31
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Fairchild Semiconductor Corporation FFP08S60SN

    RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON, TO-220AC (Also Known As: F08S60SN)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FFP08S60SN 250
    • 1 $0.9
    • 10 $0.9
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
    		Buy Now
    Find more F08S60S price and stock on Findchips.com

    F08S60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F08S60S

    Abstract: No abstract text available
    Text: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFPF08S60S F08S60S

    Untitled

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08S60S FFP08S60S

    F08S60ST

    Abstract: No abstract text available
    Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST F08S60ST

    f08s60sn

    Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
    Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60SN FFPF08S60SN f08s60sn diode 8a 600v FFPF08S60SNTU

    f08s60

    Abstract: F08S60S FFD08S60S
    Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the


    Original     		PDF FFD08S60S f08s60 F08S60S

    f08s60sn

    Abstract: TT2202 2202L FFP08S60SNTU f08s60
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08S60SN FFP08S60SN f08s60sn TT2202 2202L FFP08S60SNTU f08s60

    Untitled

    Abstract: No abstract text available
    Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the


    Original     		PDF FFD08S60S

    F08S60ST

    Abstract: FFPF08S60STTU
    Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU

    diode 8a 600v

    Abstract: diode T B 8A
    Text: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as


    Original     		PDF FFP08S60S FFP08S60S O-220-2L diode 8a 600v diode T B 8A

    Untitled

    Abstract: No abstract text available
    Text: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60SN FFPF08S60SN

    f08s60sn

    Abstract: TT2202 TT220 F08S f08s60
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08S60SN FFP08S60SN f08s60sn TT2202 TT220 F08S f08s60

    FFP08S60S

    Abstract: FFP08S60STU
    Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF=8A The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08S60S FFP08S60S FFP08S60STU

    f08s60sn

    Abstract: diode 8a 600v
    Text: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted


    Original     		PDF FFP08S60SN FFP08S60SN f08s60sn diode 8a 600v

    Untitled

    Abstract: No abstract text available
    Text: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST

    FFP08S60S

    Abstract: FFP08S60STU F08S60S
    Text: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFP08S60S FFP08S60S FFP08S60STU F08S60S

    F08S60S

    Abstract: FFPF08S60S FFPF08S60STU
    Text: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFPF08S60S FFPF08S60S F08S60S FFPF08S60STU

    Untitled

    Abstract: No abstract text available
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08S60SN FFP08S60SN

    SMD CA2

    Abstract: FFD08S60S hyper fast diode fairchild
    Text: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the


    Original     		PDF FFD08S60S SMD CA2 hyper fast diode fairchild

    Untitled

    Abstract: No abstract text available
    Text: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. rrt <30ns @ IF=8A • High Reverse Voltage and High Reliability • Avalanche Energy Rated The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast


    Original     		PDF FFPF08S60S FFPF08S60S

    F08S60S

    Abstract: f08s60
    Text: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFPF08S60S FFPF08S60STU F08S60S f08s60

    f08s60

    Abstract: FFP08S60S F08S60S
    Text: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFP08S60S FFP08S60STU f08s60 F08S60S

    F08S60S

    Abstract: F08S
    Text: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFP08S60S F08S60S F08S

    F08S60S

    Abstract: ffp08s60stu FFP08S60S
    Text: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFP08S60S FFP08S60S F08S60S ffp08s60stu

    F08S60SN

    Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
    Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08S60SN FFP08S60SN F08S60SN FFP08S60SNTU TO220-2L diode 8a 600v C200300