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    FLIP ELECTRONICS FFPF08S60STTU

    DIODE AVALANCHE 600V 8A TO220F2L
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    DigiKey FFPF08S60STTU Tube 1,000
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    onsemi FFPF08S60STTU

    DIODE AVALANCHE 600V 8A TO220F2L
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    Avnet Americas FFPF08S60STTU Tube 0 Weeks, 2 Days 1,021
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    Bristol Electronics FFPF08S60STTU 950
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    Quest Components FFPF08S60STTU 760
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    EBV Elektronik FFPF08S60STTU 143 Weeks 50
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    Flip Electronics FFPF08S60STTU 31,000
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    FFPF08S60STTU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FFPF08S60STTU
    		Fairchild Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 600V 8A TO220 Original PDF

    FFPF08S60STTU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F08S60ST

    Contextual Info: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST F08S60ST PDF

    F08S60ST

    Abstract: FFPF08S60STTU
    Contextual Info: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU PDF

    Contextual Info: FFPF08S60ST 8 A, 600 V STEALTHTM II Diode Features Description • Stealth Recovery trr = 30 ns @ IF = 8 A The FFPF08S60S is STEALTH II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60S PDF

    Contextual Info: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST PDF