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    F08S60ST Search Results

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    F08S60ST Price and Stock

    onsemi FFPF08S60STU

    DIODE AVALANCHE 600V 8A TO220F2L
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    DigiKey FFPF08S60STU Tube 69 1
    • 1 $1.86
    • 10 $1.86
    • 100 $0.8904
    • 1000 $0.8904
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    Rochester Electronics FFPF08S60STU 13,976 1
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    • 100 $0.6752
    • 1000 $0.5604
    • 10000 $0.4996
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    Avnet Silica FFPF08S60STU 143 Weeks 50
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    EBV Elektronik FFPF08S60STU 143 Weeks 50
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    FLIP ELECTRONICS FFPF08S60STTU

    DIODE AVALANCHE 600V 8A TO220F2L
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    DigiKey FFPF08S60STTU Tube 1,000
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    • 1000 $0.67
    • 10000 $0.67
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    onsemi FFPF08S60STTU

    DIODE AVALANCHE 600V 8A TO220F2L
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    DigiKey FFPF08S60STTU Tube
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    Avnet Americas FFPF08S60STTU Tube 0 Weeks, 2 Days 1,021
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    • 10000 $0.6174
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    Bristol Electronics FFPF08S60STTU 950
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    EBV Elektronik FFPF08S60STTU 143 Weeks 50
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    Flip Electronics FFPF08S60STTU 31,000
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    Fairchild Semiconductor Corporation FFPF08S60STU

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    Bristol Electronics FFPF08S60STU 31
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    F08S60ST Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F08S60ST

    Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST F08S60ST PDF

    F08S60ST

    Abstract: FFPF08S60STTU
    Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU PDF

    Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST PDF