F08S60 Search Results

F08S60S

Contextual Info: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F08S60ST

Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60

Abstract: F08S60S FFD08S60S
Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the

f08s60sn

Abstract: TT2202 2202L FFP08S60SNTU f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the

F08S60ST

Abstract: FFPF08S60STTU
Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

diode 8a 600v

Abstract: diode T B 8A
Contextual Info: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: TT2202 TT220 F08S f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

FFP08S60S

Abstract: FFP08S60STU
Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF=8A The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: diode 8a 600v
Contextual Info: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted

Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

FFP08S60S

Abstract: FFP08S60STU F08S60S
Contextual Info: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

F08S60S

Abstract: FFPF08S60S FFPF08S60STU
Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

SMD CA2

Abstract: FFD08S60S hyper fast diode fairchild
Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the

Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. rrt <30ns @ IF=8A • High Reverse Voltage and High Reliability • Avalanche Energy Rated The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast

F08S60S

Abstract: f08s60
Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

f08s60

Abstract: FFP08S60S F08S60S
Contextual Info: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

F08S60S

Abstract: F08S
Contextual Info: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

F08S60S

Abstract: ffp08s60stu FFP08S60S
Contextual Info: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

F08S60SN

Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.