ER 2110 Search Results

Contextual Info: plerowTM APM2140-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 31.4 dB @ 2110 MHz = 30.6 dB @ 2170 MHz · NF of 2.0 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply

Contextual Info: plerowTM ALN2140BT Internally Matched LNA Module Features Description • S21 = 14.8 dB @ 2110 MHz = 14.2 dB @ 2170 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: T O S H IB A MIG75Q202H TO SH IBA INTELLIGENT GTR M O D ULE SILICON N CHANNEL IGBT MIG75Q202H HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • In teg ra te s Inverter, B rake Pow er C ircuits & Control C ircuits IGBT drive units, Protection units

2N3553 motorola

Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.

2482h b3

Abstract: 3204H PL 2305H PMC-2021098 1A27H 171bh 1D18 336FH 1733H 3583H
Contextual Info: 14 PM TUPP 2488 ASSP Data Sheet Register Description Released ob sd ay ,2 8O ct TUPP 2488 er ,2 00 4 12 :5 9: PM5364 rtm in er In co n Th ur SONET/SDH Tributary Unit Payload Processor For 2488.32 Mbit/s Interfaces Released Issue No. 6: August 2004 Do wn

Contextual Info: 5: 18 AM PM5317 SPECTRA-9953 Telecom Standard Product Data Sheet Release ob er ,2 00 4 09 :2 PM5317 Fr id ay ,2 9O ct SPECTRA_9953 Data Sheet Proprietary and Confidential Release Issue No. 5: June 2002 Do wn lo ad ed by Co nt e nt T ea m of Pa rtm in er In

010B

Abstract: C166SV2 J1850 XC161 sae 1850 vpw
Contextual Info: U s er ’ s Ma n u a l , V 2 . 2, J a n . 20 0 4 XC161 1 6 - B i t S i n g l e - C h i p M i c r o c o n t r o l l er with C166SV2 Core V ol u m e 2 o f 2 : P e ri p he ra l U ni t s M i c r o c o n t r o l l er s N e v e r s t o p t h i n k i n g . Edition 2004-01

stk 412 -410

Abstract: IC stk 412 410 stk 142 150 C167SR-LM C166 C167 C167CR C167CR-16RM C167CR-4RM C167CR-LM
Contextual Info: U s er ’ s Ma n u al , V 3. 1 , M ar . 20 0 0 C167CR Derivatives 1 6- B i t S in gl e- C hi p M i cr oc o nt ro ll er Mi cro c on tr ol le rs N e v e r s t o p t h i n k i n g . Edition 2000-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

SSM-2013

Abstract: SSM21 ssm2013 ptc rm5 SSM2131 lt 2110 SSM2110
Contextual Info: ANALOG DEVICES True RMS-to-DC Converter SSM-2110 □ FEATURES G EN ER AL DESCRIPTION • Uulliple Output Options Absolute Valu^ RMS, Log RMS, Log Absolute Value« Average Absolute Value 100dB * WWe Dynamic Hange - . -. * Preblas Option for Fast Response at Low Signal Levels

FZH 191

Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
Contextual Info: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine

Contextual Info: TOSHIBA MIG50Q201H TOSHIBA INTELLIGENT POW ER MODULE SILICON N CHANNEL IGBT MIG50Q201H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units

Contextual Info: TOSHIBA MIG75Q202H TOSHIBA INTELLIGENT POW ER MODULE SILICON N CHANNEL IGBT MIG75Q202H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units

Contextual Info: Series N - 50 Q Leistungsteiler, Pow er Splitter, 4-way Part Number Remarks 4-fach Packing Unit 53PK141-KOO N1 880-960 MHz a= 140.0 1 53PK142-KOO N1 1710-1880 MHz a= 85.3 1 53PK143-K00 N1 1850-1990 MHz a= 85.3 1 53PK144-K00 N1 806-896 Mhz a= 140.0 1 53PK145-K00 N1 2110-2170 MHz

Contextual Info: TO SHIBA MIG100J201 HC TOSHIBA INTELLIGENT GTR MODULE SILICON N CHANNEL IGBT M IG 100J201HC HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units

Radialventilatoren

Abstract: einschraubtiefe
Contextual Info: Ausgabe 2013-05 EC-/AC-Radialventilatoren – RadiCal Die Wahl der Ingenieure EC-/AC-Radialventilatoren – RadiCal Laufräder aus High-Tech-Verbundmaterial in einem Stück gefertigt, opti- Für den Einsatz, nicht nur in der Lüftungs- und Klimatechnik, eröffnen

sab 3013

Abstract: IC tda 1571 TDA1506 sab3013 SAA5051 SAB3034 SAF 3019 Tda1533 SAA 1059 valvo halbleiter
Contextual Info: Elektronik. Wir bauen die Elemente. V A m Integrierte Schaltungen für die Unterhaltungselektronik Produktprogram m t IT 1. A pril 1983 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich im m er rascher zum Motor für eine

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP7072F3,TISP7082F3 LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP70xxF3 LV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors . . . designed primarily for wideband large-signal driver and output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts

transistor 7808

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

Contextual Info: INDUCTOR TECHNOLOGIES TECHNICAL DATA WIDE BAND CHOKES P A R T NO. CORE M A T ER IA L NO . O F M IN Z FR EO . TU R N S OtWTM (MHz) IT 21107-3B IT 21117-4B 3B 4B _ — — — — — D D IT 20009-3B IT 20019-4B 3B 4B 1.5 1.5 300 350 120 250 A A IT 20010-3B

2902N

Contextual Info: QUAD SIN6LE-SUPPLY OPERATIONAL AMPLIFIER NJM2902 The NJM2902 consists of four independent high-gain operational amplifiers that are designed for single-supply operation. O peration from split pow er supplies is also possible and the low power supply drain is independent of the m agnitude of

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

5SDA

Abstract: mml 600 71B0200 avalanche 850 nm 5SDA07D
Contextual Info: Rectifier Diodes ¡conductors AGI - O ptim ized for line frequency rectifiers. - Low on-state voltage, narrow V F-bands for parallel operation. - Self-protected against transient over­ voltages. - G uaranteed m axim um avalanche pow er dissipation. — O ptim iert für Anw endungen mit