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    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY Search Results

    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M12L32321A Revision History Revision 0.1 Sep. 15 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES


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    PDF M12L32321A 32Bit M12L32321A

    esmt m13s2561616a

    Abstract: M13S2561616A -5T M13S2561616A
    Text: ESMT M13S2561616A Operation Temperature Condition -40~85°C Revision History Revision1.0 19 Oct. 2007 - Original Revision1.1 (06 Dec. 2007) - Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.1 1/49 ESMT


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    PDF M13S2561616A esmt m13s2561616a M13S2561616A -5T M13S2561616A

    M13S64164A

    Abstract: No abstract text available
    Text: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007


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    PDF M13S64164A M13S64164A

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008 Revision : 1.1 1/46 ESMT Preliminary


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    PDF M53D128168A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 1.1 1/30 ESMT M52D32162A


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    PDF M52D32162A 16Bit

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z


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    PDF M12L32162A 16Bit M12L32162

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M12L32321A Revision History Revision 0.1 Sep. 15 2006 -Original Revision 0.2 (Dec. 05 2006) -Add -5.5 & -6BG spec Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2006 Revision : 0.2 1/28 ESMT Preliminary M12L32321A SDRAM


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    PDF M12L32321A 32Bit M12L32321A

    M13S128324A

    Abstract: No abstract text available
    Text: ESMT M13S128324A Operation Temperature Condition -40~85°C Revision History Revision 1.0 Dec. 14 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.0 1/49 ESMT M13S128324A Operation Temperature Condition -40~85°C


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    PDF M13S128324A M13S128324A

    M52S128168A

    Abstract: M52S128168A-10TG
    Text: ESMT Preliminary M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date: May. 2007 Revision: 1.0 1/47 ESMT Preliminary M52S128168A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES


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    PDF M52S128168A M52S128168A M52S128168A-10TG

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Elite Semiconductor Memory Technology Inc. Publication Date: Aug. 2005 Revision: 0.2 1/46 ESMT SDRAM


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    PDF M12L128324A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 4Mx16) Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2006 Revision : 1.0


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    PDF M13S2561616A 2Mx16 4Mx16)

    esmt M12L128324A

    Abstract: M12L128324A-7TGI M12L128324A-6BI
    Text: ESMT M12L128324A Operation temperature condition -40°C~85°C Revision History Revision 1.0 Jan. 16 2006 -Original Revision 1.1(Feb. 14 2006) -Modify ICC2P; ICC4; ICC5 spec -Modify product no. of ordering information Elite Semiconductor Memory Technology Inc.


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    PDF M12L128324A esmt M12L128324A M12L128324A-7TGI M12L128324A-6BI

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S64322A Revision History Revision 1.0 Jun. 07, 2007 -Original Revision 1.1 (Oct. 08, 2007) - Add -7.5 spec - Modify DC/AC characteristics Revision 1.2 (Mar. 11, 2008) - Modify ICC spec - Modify AC parameters Elite Semiconductor Memory Technology Inc.


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    PDF M52S64322A

    M12L128168A

    Abstract: M12S128168A M12S128168A-10TG
    Text: ESMT M12S128168A Revision History Revision 1.0 Nov. 09, 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date: Nov. 2006 Revision: 1.0 1/44 ESMT M12S128168A 2M x 16 Bit x 4 Banks SDRAM Synchronous DRAM FEATURES ORDERING INFORMATION y


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    PDF M12S128168A 400mil M12L128168A M12S128168A M12S128168A-10TG

    M52S128168A

    Abstract: M52S128168A-10TG
    Text: ESMT M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Revision 1.1 (Oct. 08, 2007) -Add Speed -7 spec. -Modify Icc spec Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/47 ESMT M52S128168A Mobile SDRAM


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    PDF M52S128168A M52S128168A M52S128168A-10TG

    Untitled

    Abstract: No abstract text available
    Text: ESMT M24L816512DA Revision History : Revision 1.0 Jul. 4, 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/11 ESMT PSRAM M24L816512DA 8-Mbit (512K x 16) Pseudo Static RAM Features ‧Advanced low-power architecture


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    PDF M24L816512DA M24L816512DA

    M52S32162A

    Abstract: No abstract text available
    Text: ESMT M52S32162A Operation Temperature Condition -40°C ~85°C Revision History : Revision 1.0 Jul. 25, 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/30 ESMT M52S32162A Operation Temperature Condition -40°C ~85°C


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    PDF M52S32162A 16Bit M52S32162A

    M52D128168A

    Abstract: M52D128168A-10TG
    Text: ESMT M52D128168A Revision History Revision 1.0 May. 29, 2007 -Original Revision 1.1 (Oct. 08, 2007) -Add Speed -7 spec. -Modify Icc spec Revision 1.2 (Nov. 16, 2007) -Modify tSAC spec Elite Semiconductor Memory Technology Inc. Publication Date: Nov. 2007


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    PDF M52D128168A M52D128168A M52D128168A-10TG

    M52D128168A

    Abstract: M52D128168A-10TG
    Text: ESMT Preliminary M52D128168A Revision History Revision 1.0 May. 29, 2007 -Original Elite Semiconductor Memory Technology Inc. Publication Date: May. 2007 Revision: 1.0 1/47 ESMT Preliminary M52D128168A SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES


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    PDF M52D128168A M52D128168A M52D128168A-10TG

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S64322A Revision History Revision 1.0 Jun. 07, 2007 -Original Revision 1.1 (Oct. 08, 2007) - Add -7.5 spec - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/46 ESMT M52S64322A SDRAM


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    PDF M52S64322A

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M13S128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information -Modify typing error of Pin Arrangement Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2005


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    PDF M13S128324A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S64164A Revision History Revision 1.0 Feb. 07, 2007 -Original Revision 1.1 (Apr. 20, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Sep. 10, 2007) - Add -7.5 spec Elite Semiconductor Memory Technology Inc. Publication Date: Sep. 2007


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    PDF M52S64164A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007


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    PDF M52D64164A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2006 Revision : 1.1 1/29 ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM


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    PDF M52S32321A 32Bit M52S32321A