k10n60
Abstract: SKB10N60A
Text: SKB10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB10N60A
SKB10N60A
k10n60
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k10n60
Abstract: k10n60 igbt SKP10N60A
Text: SKP10N60A SKW10N60A Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP10N60A
SKW10N60A
PG-TO-220-3-1
O-220AB)
SKP10N60
SKW10N60
k10n60
k10n60 igbt
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gp15n120
Abstract: SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
PG-TO-247-3
GP15N120
gp15n120
SGP15N120
SGW15N120
PG-TO-220-3-1
PG-TO-247-3
ir igbt 1200V 40A
Diode 1S 2473
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g20n60
Abstract: G20N60 IGBT g20n60 G igbt 400V 20A SGW20N60 180W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGP20N60
Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP20N60
SGW20N60
PG-TO-220-3-1
PG-TO-247-3
G20N60
g20n60
G20N60 IGBT
g20n60 G
igbt 400V 20A
SGW20N60
180W
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
SGP20N60
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G10N60A
Abstract: g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:
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SGP10N60A
SGW10N60A
PG-TO-247-3
PG-TO-220-3-1
G10N60A
SGW10ontain
G10N60A
g10n60
G10N60A DATASHEET
SGW10N60A
SGP10N60A
IGBT 1500
igbt 1000v 10A
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
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g10n60
Abstract: Q67040-S4510
Text: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: - Motor controls - Inverter E PG-TO-247-3-1 TO-247AC
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SGP10N60A
SGW10N60A
SGW10N60A
g10n60
Q67040-S4510
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G20N60
Abstract: G20N60 IGBT
Text: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:
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SGP20N60
SGW20N60
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW20N60
G20N60
G20N60 IGBT
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ic60a
Abstract: No abstract text available
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW15N120
ic60a
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k30t60
Abstract: IKW30N60T IGBT IKW30N60T 22545 st 679-10 power diode 10a
Text: TrenchStop Series IKW30N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKW30N60T
Dev-04
k30t60
IKW30N60T
IGBT IKW30N60T
22545
st 679-10
power diode 10a
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k50t60
Abstract: k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt
Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKW50N60T
Dec-04
k50t60
k50t60 pdf datasheet
IKW50N60T
Q67040S4718
Datasheet k50t60
k50t6
TO-247AC Package igbt
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PDF
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k75t60
Abstract: K75T60 datasheet IKW75N60T k75t6 Q67040S4719
Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKW75N60T
Dec-04
k75t60
K75T60 datasheet
IKW75N60T
k75t6
Q67040S4719
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g20n60hs
Abstract: G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP20N60HS
SGW20N60HS
PG-TO-220-3-1
PG-TO-247-3
G20N60HS
SGW20N60nces.
g20n60hs
G20N60
SGP20N60HS
Diode 400V 20A
160W
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
SGW20N60HS
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g30n60hs
Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP30N60HS
SGW30N60HS
PG-TO-220-3-1
PG-TO-247-3
G30N60HS
SGW30N60HS
g30n60hs
G30N60hs IGBT
G30N60
SGP30N60HS
600v 30a IGBT
igbt 600V 30A infineon SGW30N60HS
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
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g30t60
Abstract: g30t 600v 30a IGBT ikW30N60 IGBT IKW30N60T ikw30n60t S-108 st 679-10 160W IGP30N60T
Text: TrenchStop Series IGP30N60T IGW30N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters
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IGP30N60T
IGW30N60T
P-TO-220-3-1
O-220AB)
P-TO-247-3-1
O-220AC)
Dec-04
g30t60
g30t
600v 30a IGBT
ikW30N60
IGBT IKW30N60T
ikw30n60t
S-108
st 679-10
160W
IGP30N60T
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g20n60hs
Abstract: No abstract text available
Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGP20N60HS
SGW20N60HS
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
G20N60HS
SGP20N60ubstances.
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g75t60
Abstract: IKW75N60T ikw75n60 Dec-04 IGW75N60T Q67040S4726 10V18V
Text: TrenchStop Series IGW75N60T q Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters
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IGW75N60T
P-TO-247-3-1
O-220AC)
Dec-04
g75t60
IKW75N60T
ikw75n60
Dec-04
IGW75N60T
Q67040S4726
10V18V
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PDF
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g20n60hs
Abstract: No abstract text available
Text: SKP20N60HS SKW20N60HS Preliminary High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:
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SKP20N60HS
SKW20N60HS
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
G20N60HS
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PDF
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G30T60
Abstract: IGP30N60T
Text: IGP30N60T IGW30N60T TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters
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IGP30N60T
IGW30N60T
PG-TO-220-3-1
O-220AB)
G30T60
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PDF
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g75t60
Abstract: IGW75N60T
Text: IGW75N60T q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters
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IGW75N60T
g75t60
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PDF
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G50T60
Abstract: Q67040S4723 Q67040S4725
Text: IGP50N60T IGW50N60T TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters
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IGP50N60T
IGW50N60T
PG-TO-220-3-1
O-220AB)
G50T60
Q67040S4723
Q67040S4725
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PDF
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G50T60
Abstract: IGW50N60T IKW50N60T IGP50N60T IGBT 500V 50A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 G50T60 igbt
Text: TrenchStop Series IGP50N60T IGW50N60T Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :
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IGP50N60T
IGW50N60T
PG-TO-220-3-1
G50T60
IGW50N60T
IKW50N60T
IGP50N60T
IGBT 500V 50A
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
G50T60 igbt
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PDF
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G50T60
Abstract: G50T60, G50T60 igbt IGB50N60T IGP50N60T IGW50N60T igb50n60
Text: IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for :
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IGP50N60T,
IGB50N60T
IGW50N60T
P-TO-220-3-1
O-220AB)
P-TO-247-3-1
O-220AC)
P-TO-263-3-2
Dec-04
G50T60
G50T60,
G50T60 igbt
IGB50N60T
IGP50N60T
IGW50N60T
igb50n60
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is2473
Abstract: is2471 1S2473 DIODE IS2472 1S2471 1S2473 1s2472 S2473 Diode 1S 2473 ISS41
Text: 1S2471 1S2472 1S2473 1S2787 1S2788 1SS41 V»J=J QUALITY•RELIABILITY SW ITCHING DIODE m m is (T a = 2 5 t) (A b s o lu te M axim u m R atings} m / h M £ 1S2471 1S2472 i • A.iiiii-rivii/i 1S24/3. US 2787 IS 2788 1SS41 1S 2*171 1S2472 Ii'i & m .V.: IV. 1S2473. IS 2787
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1S2471
1S2472
1S2473
1S2787
1S2788
1SS41
Ta-25t)
DD-35.
SC-40)
1S2471
is2473
is2471
1S2473 DIODE
IS2472
1S2473
S2473
Diode 1S 2473
ISS41
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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