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    Q67040S4726 Search Results

    Q67040S4726 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Q67040S4726 Infineon Technologies Low Loss IGBT in Trench and Fieldstop technology Original PDF

    Q67040S4726 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g75t60

    Abstract: IKW75N60T ikw75n60 Dec-04 IGW75N60T Q67040S4726 10V18V
    Text: TrenchStop Series IGW75N60T q Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters


    Original     		PDF IGW75N60T P-TO-247-3-1 O-220AC) Dec-04 g75t60 IKW75N60T ikw75n60 Dec-04 IGW75N60T Q67040S4726 10V18V

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    g75t60

    Abstract: IGW75N60T
    Text: IGW75N60T q TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters


    Original     		PDF IGW75N60T g75t60