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k50t60 Abstract: No abstract text available Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	PDF	IKW50N60T k50t60
k50t6 Abstract: k50t60 K50T Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode •            C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	PDF	IKW50N60T k50t6 k50t60 K50T
k50t60 Abstract: IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60 Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	PDF	IKW50N60T k50t60 IKW50N60T k50t60 pdf datasheet k50t6 Datasheet k50t60 K50T k50t60 2 B PG-TO-247-3-21 *k50t60 IKW50N60
K50T60 Abstract: Q67040S4718 IKW50N60T Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	PDF	IKW50N60T K50T60 Q67040S4718
k50t60 Abstract: K50t60 igbt Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	PDF	IKW50N60T k50t60 K50t60 igbt
IKW50N60T Abstract: K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3 Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	PDF	IKW50N60T IKW50N60T K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3
Untitled Abstract: No abstract text available Text: TRENCHSTOP Series IKW50N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s	Original	PDF	IKW50N60T
k50t60 Abstract: k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt Text: TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs	Original	PDF	IKW50N60T Dec-04 k50t60 k50t60 pdf datasheet IKW50N60T Q67040S4718 Datasheet k50t60 k50t6 TO-247AC Package igbt