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Toshiba America Electronic Components 1SS413,L3M DIODE SCHOTTKY 20V 50MA FSC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS413,L3M	Cut Tape	79,776		1	1 $0.22 10 $0.134 100 $0.22 1000 $0.05375 10000 $0.04098	Buy Now
	1SS413,L3M	Digi-Reel	79,776		1	1 $0.22 10 $0.134 100 $0.22 1000 $0.05375 10000 $0.04098	Buy Now
	1SS413,L3M	Reel	60,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03686	Buy Now
Mouser Electronics	1SS413,L3M		24,191			1 $0.18 10 $0.117 100 $0.052 1000 $0.042 10000 $0.033	Buy Now
Toshiba America Electronic Components 1SS416CT,L3F DIODE SCHOTTKY 30V 100MA CST2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS416CT,L3F	Digi-Reel	74,686		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.04418	Buy Now
	1SS416CT,L3F	Cut Tape	74,686		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.04418	Buy Now
	1SS416CT,L3F	Reel	50,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03979	Buy Now
Avnet Americas	1SS416CT,L3F	Reel		20 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	1SS416CT,L3F		26,015			1 $0.19 10 $0.125 100 $0.056 1000 $0.045 10000 $0.035	Buy Now
Toshiba America Electronic Components 1SS413CT,L3F DIODE SCHOTTKY 20V 50MA SOD882
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS413CT,L3F	Digi-Reel	38,680		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.04418	Buy Now
	1SS413CT,L3F	Cut Tape	38,680		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.04418	Buy Now
	1SS413CT,L3F	Reel	30,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03979	Buy Now
Avnet Americas	1SS413CT,L3F	Reel		12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.03366	Buy Now
Mouser Electronics	1SS413CT,L3F		48,378			1 $0.16 10 $0.109 100 $0.056 1000 $0.045 10000 $0.035	Buy Now
Toshiba America Electronic Components 1SS417CT,L3F DIODE SCHOTTKY 40V 100MA FSC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS417CT,L3F	Digi-Reel	38,277		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.04418	Buy Now
	1SS417CT,L3F	Cut Tape	38,277		1	1 $0.24 10 $0.144 100 $0.24 1000 $0.05779 10000 $0.04418	Buy Now
	1SS417CT,L3F	Reel	30,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03979	Buy Now
Avnet Americas	1SS417CT,L3F	Reel	20,000	12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.02585	Buy Now
Mouser Electronics	1SS417CT,L3F		28,718			1 $0.16 10 $0.109 100 $0.056 1000 $0.045 10000 $0.035	Buy Now
TTI	1SS417CT,L3F	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.0331	Buy Now
Toshiba America Electronic Components 1SS416,L3M DIODE SCHOTTKY 30V 100MA SOD923
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS416,L3M	Reel	20,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03686	Buy Now
Avnet Americas	1SS416,L3M	Reel	10,000	12 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.0306	Buy Now
Mouser Electronics	1SS416,L3M		21,048			1 $0.18 10 $0.117 100 $0.052 1000 $0.042 10000 $0.033	Buy Now
EBV Elektronik	1SS416,L3M			13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1SS41 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS41	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1SS41	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
1SS41	ROHM	Switching Diode	Scan	PDF
1SS412	Toshiba	Diode Silicon Epitaxial Planar Type	Original	PDF
1SS412(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V USM	Original	PDF
1SS413	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Original	PDF
1SS413,L3M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 50MA FSC	Original	PDF
1SS413CT,L3F	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 50MA SOD882	Original	PDF
1SS413(TL3,T)	Toshiba	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA FSC	Original	PDF
1SS416	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Original	PDF
1SS416,L3M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 100MA FSC	Original	PDF
1SS416CT	Toshiba	1SS416 - DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, CST2, 1-1P1A, 2 PIN, Signal Diode	Original	PDF
1SS416CT	Toshiba	Japanese - Diodes	Original	PDF
1SS416CT	Toshiba	Diodes	Original	PDF

1SS416CT,L3F	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 100MA FSC	Original	PDF
1SS416CT(TPL3)	Toshiba	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100MA CST2	Original	PDF
1SS416CT(TPL3)	Toshiba	1SS416 - Schottky (Diodes & Rectifiers) Hi-Speed 30V 100mA	Original	PDF
1SS416(TL3,T)	Toshiba	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100MA FSC	Original	PDF
1SS416(TL3,T)	Toshiba	1SS416 - Diode Small Signal Schottky 35V 0.2A 2-Pin fSC	Original	PDF
1SS416(TL4,D)	Toshiba	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.1A FSC	Original	PDF

1SS41 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200	Original	PDF	1SS417CT
Untitled Abstract: No abstract text available Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage CATHODE MARK • Unit: mm : VF 3 = 0.23V (typ.)@ IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM	Original	PDF	1SS418
1SS416 Abstract: No abstract text available Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200	Original	PDF	1SS416 1SS416
1SS419 Abstract: No abstract text available Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 µA (max) CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C)	Original	PDF	1SS419 1SS419
1SS416 Abstract: No abstract text available Text: 1SS416 東芝ダイオードシリコンエピタキシャルショットキバリア形 1SS416 ○ 高速スイッチング用単位: mm 0.6±0.05 ん頭逆逆電電定格単位圧 VRM 35 V 圧 VR 30 V せん頭順電流 IFM 200 mA 平均	Original	PDF	1SS416 1SS416
Untitled Abstract: No abstract text available Text: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-13 Rev.1.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )	Original	PDF	1SS417 OD-923)
1SS417CT Abstract: No abstract text available Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200	Original	PDF	1SS417CT 1SS417CT
Untitled Abstract: No abstract text available Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200	Original	PDF	1SS416CT
Untitled Abstract: No abstract text available Text: 1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-07-08 Rev.3.0 1SS416 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )	Original	PDF	1SS416 OD-923
Untitled Abstract: No abstract text available Text: 1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit	Original	PDF	1SS413CT
Untitled Abstract: No abstract text available Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) • 0.034(0.85) 0.029(0.75) 0.026(0.65) 0.021(0.55) MECHANICAL DATA 0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)	Original	PDF	1SS417TM OD-923 OD-923, MIL-STD-750,
1SS412 Abstract: No abstract text available Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm	Original	PDF	1SS412 SC-70 1SS412
Untitled Abstract: No abstract text available Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) MECHANICAL DATA	Original	PDF	1SS417TM OD-923 2002/95/EC OD-923, MIL-STD-750, 700ppm, 1000ppm 100ppm.
1SS417 Abstract: No abstract text available Text: 1SS417 東芝ダイオードシリコンエピタキシャルショットキバリア形 1SS417 ○ 超高速スイッチング用単位: mm 0.6±0.05 定格単位 0.07 せん頭逆逆電電圧 VRM 45 V 圧 VR 40 V せん頭順電流 IFM 200	Original	PDF	1SS417 20mmx20mm, 1SS417

1SS412 Abstract: No abstract text available Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V typ. Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70 Unit: imm Maximum Ratings (Ta = 25°C)	Original	PDF	1SS412 SC-70 1SS412
1SS413 Abstract: 11-L1 1-1L1A Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage	Original	PDF	1SS413 1SS413 11-L1 1-1L1A
1SS419 Abstract: No abstract text available Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	1SS419 1SS419
1SS418 Abstract: No abstract text available Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM	Original	PDF	1SS418 1SS418
Untitled Abstract: No abstract text available Text: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-04-03 Rev.2.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )	Original	PDF	1SS413 OD-923)
Untitled Abstract: No abstract text available Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : V F 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)	Original	PDF	1SS417TM OD-923, 2002/95/EC MIL-STD-750, 0004gram OD-923
Untitled Abstract: No abstract text available Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : VF 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)	Original	PDF	1SS417TM OD-923, 2002/95/EC MIL-STD-750, 0004gram 417TM OD-923
1S2588 Abstract: 1s2222 ISS83 is2471 1S2473 is2076a 1S2348 IS2473 1S2075 1S2076A Text: - 150 - 1S2075 K 1S2076 1S2076A 1S 2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S 2472 1S2473 1S2588 1S2588 1S 2787 1S 2835 1S 2836 1S 2637 1S2838 1S2880 1SR11—1200 1SRU -1500 1SS41 1SS53 1SS54	OCR Scan	PDF	1S2075 40MHz) 1S2076A 1S2091 17-TVetBfÃ 1S2092 1S2095A 350mW 1SS82 1S2588 1s2222 ISS83 is2471 1S2473 is2076a 1S2348 IS2473
1s2222 Abstract: 1S2588 1s2472 1S2348 IS2076 ISS83 1S2091 is2076a is2471 IS2472 Text: - 150- 1S2075 K 1S2076 1S2076A 1S2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S2472 1S2473 1S2588 1S2588 1S2787 1S2835 1S2836 1S2637 1S2838 1S2880 1SR11—1200 1 SR U -1500 1SS41 1SS53 1SS54 1SS55	OCR Scan	PDF	1S2075 40MHz) 1S2076A 1S2091 17-TVetBfÃ 1S2092 1S2095A 1ss91s 1ss92 1s2222 1S2588 1s2472 1S2348 IS2076 ISS83 1S2091 is2076a is2471 IS2472
1S2473 Abstract: 1S2471 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt 1S2787 SC-40 Text: # -f ^ — K /D io d e s ROHM CO LTD 1S2471 /1S2472/1S2473/1S2787/1SS41 40E D n 7020=]=]=] 0DDb4fiS 1 S 3 RHfl 1S2471/1S2472/1S2473 1S2787/1SS41 7: 03-0 9 y IJ 3 > X fcfii + v t - K Silicon Epitaxial Planar High-Speed Switching Diodes • iiJ I: • ^ i-ffi^ììlS l/D im e n s io n s Unit : mm	OCR Scan	PDF	1S2471 /1S2472/1S2473/1S2787/1SS41 1S2471/1S2472/1S2473 1S2787/1SS41 DO-35) DO-35 SC-40 1S2787 1S2473 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt SC-40

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1SS41 Price and Stock

Toshiba America Electronic Components 1SS413,L3M

Toshiba America Electronic Components 1SS416CT,L3F

Toshiba America Electronic Components 1SS413CT,L3F

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Toshiba America Electronic Components 1SS416,L3M

1SS41 Datasheets (36)

1SS41 Datasheets Context Search

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1SS416

1SS419

1SS416

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1SS417CT

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1SS412

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1SS417

1SS412

1SS413

1SS419

1SS418

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1S2588

1s2222

1S2473