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    1SS41 Price and Stock

    Toshiba America Electronic Components 1SS413,L3M

    DIODE SCHOTTKY 20V 50MA FSC
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    DigiKey 1SS413,L3M Cut Tape 79,776 1
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    1SS413,L3M Digi-Reel 79,776 1
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    1SS413,L3M Reel 60,000 10,000
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    Mouser Electronics 1SS413,L3M 24,191
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    Toshiba America Electronic Components 1SS416CT,L3F

    DIODE SCHOTTKY 30V 100MA CST2
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    DigiKey 1SS416CT,L3F Digi-Reel 74,686 1
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    1SS416CT,L3F Cut Tape 74,686 1
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    1SS416CT,L3F Reel 50,000 10,000
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    Avnet Americas 1SS416CT,L3F Reel 20 Weeks 10,000
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    Mouser Electronics 1SS416CT,L3F 26,015
    • 1 $0.19
    • 10 $0.125
    • 100 $0.056
    • 1000 $0.045
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    Toshiba America Electronic Components 1SS413CT,L3F

    DIODE SCHOTTKY 20V 50MA SOD882
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    DigiKey 1SS413CT,L3F Digi-Reel 38,680 1
    • 1 $0.24
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    1SS413CT,L3F Cut Tape 38,680 1
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    1SS413CT,L3F Reel 30,000 10,000
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    Avnet Americas 1SS413CT,L3F Reel 12 Weeks 10,000
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    Mouser Electronics 1SS413CT,L3F 48,378
    • 1 $0.16
    • 10 $0.109
    • 100 $0.056
    • 1000 $0.045
    • 10000 $0.035
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    Toshiba America Electronic Components 1SS417CT,L3F

    DIODE SCHOTTKY 40V 100MA FSC
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    DigiKey 1SS417CT,L3F Digi-Reel 38,277 1
    • 1 $0.24
    • 10 $0.144
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    • 1000 $0.05779
    • 10000 $0.04418
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    1SS417CT,L3F Cut Tape 38,277 1
    • 1 $0.24
    • 10 $0.144
    • 100 $0.24
    • 1000 $0.05779
    • 10000 $0.04418
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    1SS417CT,L3F Reel 30,000 10,000
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    Avnet Americas 1SS417CT,L3F Reel 20,000 12 Weeks 10,000
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    Mouser Electronics 1SS417CT,L3F 28,718
    • 1 $0.16
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    TTI 1SS417CT,L3F Reel 10,000
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    Toshiba America Electronic Components 1SS416,L3M

    DIODE SCHOTTKY 30V 100MA SOD923
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS416,L3M Reel 20,000 10,000
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    Avnet Americas 1SS416,L3M Reel 10,000 12 Weeks 10,000
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    Mouser Electronics 1SS416,L3M 21,048
    • 1 $0.18
    • 10 $0.117
    • 100 $0.052
    • 1000 $0.042
    • 10000 $0.033
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    EBV Elektronik 1SS416,L3M 13 Weeks 1
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    Find more 1SS41 price and stock on Findchips.com

    1SS41 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS41 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS41 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS41 ROHM Switching Diode Scan PDF
    1SS412 Toshiba Diode Silicon Epitaxial Planar Type Original PDF
    1SS412(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V USM Original PDF
    1SS413 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS413,L3M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 50MA FSC Original PDF
    1SS413CT,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20V 50MA SOD882 Original PDF
    1SS413(TL3,T) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 50MA FSC Original PDF
    1SS416 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS416,L3M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 100MA FSC Original PDF
    1SS416CT Toshiba 1SS416 - DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, CST2, 1-1P1A, 2 PIN, Signal Diode Original PDF
    1SS416CT Toshiba Japanese - Diodes Original PDF
    1SS416CT Toshiba Diodes Original PDF
    1SS416CT,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 100MA FSC Original PDF
    1SS416CT(TPL3) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100MA CST2 Original PDF
    1SS416CT(TPL3) Toshiba 1SS416 - Schottky (Diodes & Rectifiers) Hi-Speed 30V 100mA Original PDF
    1SS416(TL3,T) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 100MA FSC Original PDF
    1SS416(TL3,T) Toshiba 1SS416 - Diode Small Signal Schottky 35V 0.2A 2-Pin fSC Original PDF
    1SS416(TL4,D) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.1A FSC Original PDF

    1SS41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage CATHODE MARK • Unit: mm : VF 3 = 0.23V (typ.)@ IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original     		PDF 1SS418

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416 1SS416

    1SS419

    Abstract: No abstract text available
    Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 µA (max) CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS419 1SS419

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS416 ○ 高速スイッチング用 単位: mm 0.6±0.05 ん 頭 逆 逆 電 電 定格 単位 圧 VRM 35 V 圧 VR 30 V せ ん 頭 順 電 流 IFM 200 mA 平 均


    Original     		PDF 1SS416 1SS416

    Untitled

    Abstract: No abstract text available
    Text: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-13 Rev.1.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS417 OD-923)

    1SS417CT

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT 1SS417CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416 Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-07-08 Rev.3.0 1SS416 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS416 OD-923

    Untitled

    Abstract: No abstract text available
    Text: 1SS413CT Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit


    Original     		PDF 1SS413CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) • 0.034(0.85) 0.029(0.75) 0.026(0.65) 0.021(0.55) MECHANICAL DATA 0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)


    Original     		PDF 1SS417TM OD-923 OD-923, MIL-STD-750,

    1SS412

    Abstract: No abstract text available
    Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm


    Original     		PDF 1SS412 SC-70 1SS412

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) MECHANICAL DATA


    Original     		PDF 1SS417TM OD-923 2002/95/EC OD-923, MIL-STD-750, 700ppm, 1000ppm 100ppm.

    1SS417

    Abstract: No abstract text available
    Text: 1SS417 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417 ○ 超高速スイッチング用 単位: mm 0.6±0.05 定格 単位 0.07 せ ん 頭 逆 逆 電 電 圧 VRM 45 V 圧 VR 40 V せ ん 頭 順 電 流 IFM 200


    Original     		PDF 1SS417 20mmx20mm, 1SS417

    1SS412

    Abstract: No abstract text available
    Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V typ. Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70 Unit: imm Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS412 SC-70 1SS412

    1SS413

    Abstract: 11-L1 1-1L1A
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage


    Original     		PDF 1SS413 1SS413 11-L1 1-1L1A

    1SS419

    Abstract: No abstract text available
    Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS419 1SS419

    1SS418

    Abstract: No abstract text available
    Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original     		PDF 1SS418 1SS418

    Untitled

    Abstract: No abstract text available
    Text: 1SS413 Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2002-11 2014-04-03 Rev.2.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS413 OD-923)

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : V F 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)


    Original     		PDF 1SS417TM OD-923, 2002/95/EC MIL-STD-750, 0004gram OD-923

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : VF 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)


    Original     		PDF 1SS417TM OD-923, 2002/95/EC MIL-STD-750, 0004gram 417TM OD-923

    1S2588

    Abstract: 1s2222 ISS83 is2471 1S2473 is2076a 1S2348 IS2473 1S2075 1S2076A
    Text: - 150 - 1S2075 K 1S2076 1S2076A 1S 2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S 2472 1S2473 1S2588 1S2588 1S 2787 1S 2835 1S 2836 1S 2637 1S2838 1S2880 1SR11—1200 1SRU -1500 1SS41 1SS53 1SS54


    OCR Scan     		PDF 1S2075 40MHz) 1S2076A 1S2091 17-TVetBfà 1S2092 1S2095A 350mW 1SS82 1S2588 1s2222 ISS83 is2471 1S2473 is2076a 1S2348 IS2473

    1s2222

    Abstract: 1S2588 1s2472 1S2348 IS2076 ISS83 1S2091 is2076a is2471 IS2472
    Text: - 150- 1S2075 K 1S2076 1S2076A 1S2091 1S2092 1S2095A 1S2134 1S2134 1S2135 1S2135 1S2212 1S2222 1S2348 1S2460 1S2461 1S2462 1S2463 1S2471 1S2472 1S2473 1S2588 1S2588 1S2787 1S2835 1S2836 1S2637 1S2838 1S2880 1SR11—1200 1 SR U -1500 1SS41 1SS53 1SS54 1SS55


    OCR Scan     		PDF 1S2075 40MHz) 1S2076A 1S2091 17-TVetBfà 1S2092 1S2095A 1ss91s 1ss92 1s2222 1S2588 1s2472 1S2348 IS2076 ISS83 1S2091 is2076a is2471 IS2472

    1S2473

    Abstract: 1S2471 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt 1S2787 SC-40
    Text: # -f ^ — K /D io d e s ROHM CO LTD 1S2471 /1S2472/1S2473/1S2787/1SS41 40E D n 7020=]=]=] 0DDb4fiS 1 S 3 RHfl 1S2471/1S2472/1S2473 1S2787/1SS41 7: 03-0 9 y IJ 3 > X fcfii + v t - K Silicon Epitaxial Planar High-Speed Switching Diodes • iiJ I: • ^ i-ffi^ììlS l/D im e n s io n s Unit : mm


    OCR Scan     		PDF 1S2471 /1S2472/1S2473/1S2787/1SS41 1S2471/1S2472/1S2473 1S2787/1SS41 DO-35) DO-35 SC-40 1S2787 1S2473 1s2472 1N3606 1SS41 1S247 1n4148 ITT 1n914b itt SC-40