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    Infineon Technologies AG SGP30N60HSXKSA1

    IGBT 600V 41A 250W TO220-3
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    SGP30N60HS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGP30N60HS Infineon Technologies 30A 600V TO220 IGBT Original PDF
    SGP30N60HS Infineon Technologies High Speed IGBT in NPT-technology Original PDF
    SGP30N60HSXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 41A 250W TO220-3 Original PDF

    SGP30N60HS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGP30N60HS

    Abstract: SGW30N60HS 3UAT
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-247AC) O-220AB Q67040-S4500 SGP30N60HS SGW30N60HS 3UAT

    g30n60hs

    Abstract: g30n60 SGW30N60HS 1A20A
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60 1A20A

    SGW30N60HS

    Abstract: SGP30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS P-TO-220-3-1 O-220AB) P-TO-247-3-1 O-247AC) O-220AB Q67040-S4500 SGW30N60HS SGP30N60HS

    SGP30N60HS

    Abstract: SIGC25T60UN
    Text: SIGC25T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SGP30N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC25T60UN


    Original     		PDF SIGC25T60UN SGP30N60HS Q67041-A4667A001 7262-U, SGP30N60HS SIGC25T60UN

    G30N60HS

    Abstract: SGP30N60HS G30N60h SGW30N60HS G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS G30N60HS SGP30N60HS G30N60h G30N60 g30n60hs pspice high frequency igbt G30N60hs IGBT PG-TO-247-3 PG-TO-220-3-1 PG-TO-247-3-21

    g30n60hs

    Abstract: G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 G30N60HS g30n60hs G30N60hs IGBT g30n60 SGP30N60HS G30N60h g30n60hs pspice high frequency igbt SGW30N60HS PG-TO-247-3-21 PG-TO-220-3-1 PG-TO247-3-21

    g30n60hs

    Abstract: g30n60 SGW30N60HS SGP30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3-21 PG-TO-220-3-1 SGW30N60HS g30n60hs g30n60

    g30n60hs

    Abstract: g30n60 RG111 SGW30N60HS
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60HS g30n60hs g30n60 RG111

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC25T60UN IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type SIGC25T60UN VCE 600V This chip is used for: • SGP30N60HS G


    Original     		PDF SIGC25T60UN SGP30N60HS Q67041-A4667sawn 7262-U,

    Q67040-S4501

    Abstract: SGW30N60HS
    Text: Preliminary Datasheet SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:


    Original     		PDF SGP30N60HS SGW30N60HS SGW30N60HS O-220AB O-247AC Q67040-S4500 Q67040-S4501 Jan-02 Q67040-S4501

    SGW30N60HS

    Abstract: SGP30N60HS
    Text: Preliminary Datasheet SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 16 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS O-220AB Q67040-A4463-A003 O-247AC Q67040-S4237-A002 Sep-01 SGW30N60HS SGP30N60HS

    SGP30N60HS

    Abstract: SIGC25T60UN
    Text: SIGC25T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SGP30N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC25T60UN


    Original     		PDF SIGC25T60UN SGP30N60HS Q67041-A4667A001 7262-U, SGP30N60HS SIGC25T60UN

    SGP30N60HS

    Abstract: TO220 package infineon SIGC25T60UN
    Text: SIGC25T60UN High Speed IGBT Chip in NPT-technology C FEATURES: • • • • • • This chip is used for: • SGP30N60HS low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC25T60UN


    Original     		PDF SIGC25T60UN SGP30N60HS Q67041-A4667A001 7262-U, SGP30N60HS TO220 package infineon SIGC25T60UN

    g30n60hs

    Abstract: G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT SGW30N60HS igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
    Text: SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP30N60HS SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 G30N60HS SGW30N60HS g30n60hs G30N60hs IGBT G30N60 SGP30N60HS 600v 30a IGBT igbt 600V 30A infineon SGW30N60HS PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    igbt dimmer

    Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
    Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling


    Original     		PDF B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60

    Electric Welding Machine diagram

    Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS
    Text: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor


    Original     		PDF 10kHz O-247 TC100 O-220 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3

    IGBT SKW30N60HS

    Abstract: igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel
    Text: High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : NPT Technologie : The key component for power Electronic applications – the power switch - is still a


    Original     		PDF 10kHz O-247 TC100 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS SGW30N60HS IGBT SKW30N60HS igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel