DIODE 0406 Search Results

NX8341UH

Abstract: 10 gb laser diode nec 2702 NX8341 NX8341UN PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

NX6406

Abstract: NX6406GH NX6406GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.

A1276

Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

NX5313EH

Abstract: NX5313 NX5313EK PX10160E A1276 laser gpon
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

NX5501

Abstract: NX5501EH NX5501EK PX10160E
Contextual Info: DATA SHEET LASER DIODE NX5501 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • FTTH (Fiber To The Home)

NX6506

Abstract: NX6506GH NX6506GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6506 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 622 Mb/s, 1.25 Gb/s DESCRIPTION The NX6506 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.

NX7461LE-CC

Abstract: PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX7461LE-CC 1 480 nm EDFA APPLICATION InGaAsP MQW-FP LASER DIODE MODULE DESCRIPTION The NX7461LE-CC is a 1 480 nm pumping laser diode module with optical isolator for an EDFA Er Doped optical Fiber Amplifier that can expand the

nec MONITOR 28 PIN CONNECTOR

Abstract: NX7462LE-CC PX10160E invisible
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX7462LE-CC 1 480 nm EDFA APPLICATION InGaAsP MQW-FP LASER DIODE MODULE DESCRIPTION The NX7462LE-CC is a 1 480 nm pumping laser diode module with optical isolator for an EDFA Er Doped optical Fiber Amplifier that can expand the

NX5310

Abstract: NX5310EH NX5310EK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

NEC JAPAN

Abstract: NX5312 NX5312EH NX5312EK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8312UD 1 310 nm FOR SHORT HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8312UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

NX5311

Abstract: NX5311GH NX5311GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5311 Series 1 310 nm FOR 1.25 Gb/s, FTTH PON InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5311 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

ES01F

Contextual Info: SANKEN ELECTRIC CO., LTD. ES01F 1. Scope The present specifications shall apply to Sanken silicon diode, ES01F. 2. Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Pulse Rectification, etc Flammability: UL94V-0 (Equivalent)

sms05

Abstract: GPZ1275 xbox 360 lcd gameboy xbox 360 power supply FC177 SMDA08 VSB10P15LCI VS10P05 MSMF15C
Contextual Info: TABLE OF CONTENTS Product Index – Alphanumeric . 2 TVS Diode Arrays. 3

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

Contextual Info: PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package

SC-43A

Abstract: cfl Self-Oscillating
Contextual Info: PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

FMB-G19L

Abstract: FMB-G19 FMBG19
Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-G19L 1. Scope The present specifications shall apply to an FMB-G19L. 2. Outline 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0 Equivalent 040618 1／5

Contextual Info: SANKEN ELECTRIC CO., LTD. RA13 1. Scope The present specifications shall apply to an RA13. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040622 1／5 61426-01

Contextual Info: SANKEN ELECTRIC CO., LTD. RN1Z 1. Scope The present specifications shall apply to an RN1Z. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040608 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

Contextual Info: SANKEN ELECTRIC CO., LTD. RU2 1. Scope The present specifications shall apply to a RU2. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No. Item

Contextual Info: SANKEN ELECTRIC CO., LTD. EU2 1. Scope The present specifications shall apply to an EU2. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No. Item