NX5312EK Search Results

NX5312

Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Contextual Info: LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

Contextual Info: DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

10 gb laser diode 1310 nm

Contextual Info: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY:

NX5312

Abstract: NX5312EH NX5312EH-AZ NX5312EK NX5312EK-AZ
Contextual Info: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5312 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 5.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY:

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC JAPAN

Abstract: NX5312 NX5312EH NX5312EK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These