NX6506 Search Results

NX6506

Abstract: NX6506GH NX6506GH-AZ NX6506GK NX6506GK-AZ
Contextual Info: NECʼs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:

Contextual Info: NEC’s 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6506 SERIES FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.25 W/A • SIDE MODE SUPPRESSION RATIO:

NX6506

Abstract: NX6506GH NX6506GK PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6506 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 622 Mb/s, 1.25 Gb/s DESCRIPTION The NX6506 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.

NEC Product Guide Product Catalog

Abstract: NX6506 NX6506GH NX6506GK PX10160E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid