NX5315EK Search Results

NX5315EK Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NX5315EK		NEC	Laser Diode, InGaAsP MQW-FP Laser Diode		Original	PDF
NX5315EK-AZ		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications		Original	PDF

NX5315EK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A1276 Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These	Original	NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon	PDF
NX5315 Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ Contextual Info: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ	PDF
Contextual Info: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	NX5315	PDF

Catalog Datasheet

Type

Document Tags

PDF

A1276

Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These

Original

NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon

PDF

NX5315

Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ
Contextual Info: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:

Original

NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ

PDF

Contextual Info: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:

Original

NX5315

PDF