NX5501EK Search Results

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

NX5501

Contextual Info: NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85°C

NX5501

Abstract: NX5501EH NX5501EK PX10160E
Contextual Info: DATA SHEET LASER DIODE NX5501 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • FTTH (Fiber To The Home)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NX5501

Abstract: NX5501EH NX5501EH-AZ NX5501EK NX5501EK-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85°C