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    Samtec Inc IDSD-33-D-25.00-G

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    D33D25 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D33D25 General Electric Semiconductor Data Book 1971 Scan PDF
    D33D25 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D33D25 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    D33D25 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    D33D25 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D33D25 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D33D25 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D33D25 Sprague Semiconductor Data Book 1977 Scan PDF
    D33D25C Unknown Semiconductor Master Cross Reference Guide Scan PDF
    D33D25J1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    D33D25J1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    D33D25-J1 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    D33D25-J1 Sprague Semiconductor Data Book 1977 Scan PDF

    D33D25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp 2N3906 beta

    Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
    Text: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION


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    PDF 2N3395 2N3396 2N3397 2N3398 2N2926 2N4401 2N4402 2N4403 MPS2713 MPS2714 pnp 2N3906 beta 2n4058 N3904 to-92hs D29E2-J1

    D33D30

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V C E (S A T ) M in.-Max. @ IC , V C E (V> (V) Max. l c . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A lc/10 D33D30 2N5305 2N5306

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5418 2N5305 2N5306

    2N4425

    Abstract: 2N5305 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    TRANSISTOR 1003

    Abstract: MPSU45 MPSA43C MPSD01C D16P1C D33D21C MPSD02C MPSD03C MPSD04C MPSD05C
    Text: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type DC Current Gain IcBO VcE sat f lc Max. ^(BR)CBO V(BR)CEO V(BR)EBO Max. @vCB hFE ^FE (aic @vCE Max. c Min. @lc Cot,1 V NF1 (mA) (V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (p H (ns) (dB)


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    PDF MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C D33D26C D33D27C D33D29C D33D30C TRANSISTOR 1003 MPSU45 D16P1C D33D21C

    2N6008

    Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6008 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014

    d33025

    Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N6000 2n3391 2N6006 2N6002 GET3014 GET3638 2n2926

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015

    SL 100 NPN Transistor base emitter collector

    Abstract: D29E6 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A lc/10 SL 100 NPN Transistor base emitter collector D29E6 2N5305

    2N4256

    Abstract: 2N4425 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2N5172
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D29E1/D33D21 2N5305 2N5306 2N5172

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    D29E6

    Abstract: D33D24 D33D25
    Text: Silicon Transistors D33D24-27 D29E4-7 D29E4J1-7J1 I D33D24J1-27J1 The PNP D29E4-7 series and the NPN D33D24-27 series are silicon, planar, passivated, epitaxial trans­ istor intended for general purpose applications. These complementary pairs are especially suited for the


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    PDF D29E4-7 D33D24-27 D29E4J1-7J1 D33D24J1-27J1 D33D24-27 lc/10 029E7â D29E6 D33D24 D33D25

    2N5232

    Abstract: 2N3858 2N3858A 2N3859 2N3859A 2N3860 D29F1 D29F2 D29F3 D29F4
    Text: PNP SILICON SIGNAL MEDIUM CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES V c E iia t VcEO Type hf-F S i — 5V — 2mA D29F1 60-120 D29F2 100-200 D29F3 150-300 D29F4 250-500 D29F5 60-120 D29F6 100-200 D29F7 150-300 (O) — 10 V M in. (V) ici) — 10mA


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    PDF D29F1 D29F2 D29F3 2N3858, 2N3858A, 2N3859, 2N3859A, 2N3860, 2N5232. D29F4 2N5232 2N3858 2N3858A 2N3859 2N3859A 2N3860

    COMPLEMENTARY PNP-NPN TRANSISTORS

    Abstract: 2NG076 2N5354 2N5355 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2
    Text: SILICON SIGNAL SWITCHING & AM PLIFIER COM PLEM ENTARY PNP-NPN PAIRS NPN Type PNP V (mA) Min. Max. @ 50mA, 2.5mA Max. (V) @ 1V, 50mA Ccb @ 10V, 1MHz Typical (Pf) ft Typical (MHz) Package Outline No. Specification Sheet Ne. 25 360 500 40 120 0.250 5.0 250


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    PDF 2N5354 2N5418 2N5355 2N5419 2N5356 2N5420 500mA COMPLEMENTARY PNP-NPN TRANSISTORS 2NG076 2N5354 2N5355 2N5356 D29E1 D29E2

    COMPLEMENTARY PNP-NPN TRANSISTORS

    Abstract: 2N5354 2N5355 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2 D33D21
    Text: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2 N 5354 V c E fSATJ lllFE V Pt < 25°C ~(mW) (mA) Min. Max. @ 50mA, 2.5mA Max. (V) VcEO @ 1V, 50m A lc ’ Ccb @ 10V, 1M H z Typical (Pf) ft Typical (MHz) Package Outline No.


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    PDF 2N5354 2N5418 2N5355 2N5419 2N5356 2N5420 500mA D33D26 D29E7 D33D27 COMPLEMENTARY PNP-NPN TRANSISTORS 2N5354 2N5355 2N5356 D29E1 D29E2 D33D21

    d33025* specification

    Abstract: 2N5309 2N5998 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025* specification 2N5309 2N5998 2N6006 2N6000 2N6002 GET3014 GET3638

    2n6004

    Abstract: 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2n6004 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025

    2NS35

    Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2NS35 D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014

    2N3856

    Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3856 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TRANSISTOR 1003

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C


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    PDF G0G35t MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C MPSD06C MPSL01C MPSU45C TRANSISTOR 1003