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    2N3859 Price and Stock

    onsemi 2N3859A

    TRANS NPN 60V 0.5A TO-92-3
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    ROHM Semiconductor 2N3859

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    Bristol Electronics 2N3859 8,000
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    Quest Components 2N3859 6,400
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    National Semiconductor Corporation 2N3859A

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    Bristol Electronics 2N3859A 2,962
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    Others 2N3859

    TRANSISTOR,BJT,NPN,30V V(BR)CEO,100MA I(C),TO-98
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    Quest Components 2N3859 24
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    Fairchild Semiconductor Corporation 2N3859A_NL

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    NexGen Digital 2N3859A_NL 2,500
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    2N3859 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3859 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 30 MinV, TO-92, 3-Pin Scan PDF
    2N3859 Allegro MicroSystems Bipolar transistor Scan PDF
    2N3859 Central Semiconductor NPN EPOXY - LOW NOISE LEVEL AMPLIFIER / NPN EPOXY - RF/IF OSCILLATOR Scan PDF
    2N3859 Central Semiconductor Low Noise Level Amp / Oscillator / Switching Transistors Scan PDF
    2N3859 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3859 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3859 Diode Transistor NPN TO-111 / TO-59 Transistors Scan PDF
    2N3859 Diode Transistor Transistor Short Form Data Scan PDF
    2N3859 General Electric Semiconductor Data Book 1971 Scan PDF
    2N3859 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N3859 General Electric Planar epitaxial passivated NPN Silicon Transistor. 30V, 100mA. Scan PDF
    2N3859 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3859 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3859 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3859 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3859 Unknown Vintage Transistor Datasheets Scan PDF
    2N3859 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3859 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3859 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3859 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N3859 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3859A

    Abstract: MPS6521 PN930 TIS97
    Text: This Material NPN Transistors cr NPN Low Level Amplifiers continued Ü1 a fc-j b-1 Copyrighted UJ V Device No. Case Style a CD PN930 o -E TO-92 (92) CBO V y ceo V EBO (V) Min (V) Min (V) Min 45 45 5 *CBO (nA) @ “ Max ' ' 10 By Its Respective tr ru 2N3859A


    OCR Scan     		PN930 2N3859A MPS6521 TIS97 Hz-10 PDF

    2N3859

    Abstract: 2N3860 2N3859A 2N3659 2N3858 E1307 2N3868 BA 4213 2N3658 2N3858-60
    Text: SOLI» STATE ÜÏ D E | 3Ö7S0Ö1 D G l T ^ n - Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2 N 3 858,2N 3859 and 2N3860 are planar epitaxlal passivated NPN silicon transistors designed primarily for


    OCR Scan     		2N3858-60, 2N3858A, 2N3859A 2N3858 2N3859 2N3860 2N3858 2N3659 2N3858A 2N3859A E1307 2N3868 BA 4213 2N3658 2N3858-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3859A . TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum RatinQS


    OCR Scan     		2N3859A PN100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		2N3859A 300mA. PN100 PDF

    2N3859A

    Abstract: npn general purpose amplifier PN100
    Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N3859A PN100 2N3859A npn general purpose amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3859 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3859 Freq90M PDF

    2N3859A

    Abstract: 2N3859 F63TNR PN100 PN2222N CBVK741B019
    Text: 2N3859A E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N3859A PN100 2N3859A 2N3859 F63TNR PN2222N CBVK741B019 PDF

    2N5219

    Abstract: T0-92B 2N4286 2N4291 2N4289
    Text: Low Level and General Purpose Amplifiers M A X IM U M R A T IN G S TYPE NO. PO LA ­ R IT Y CASE H KE Pd Ic VcEO mW (mA) (V) min max le V CE max le (mA) (V) (V) (mA) 2 4.5 4.5 4.5 4.5 0.125 0.125 10 10 - 2N3859 2N3860 2N3900 2N3901 N N N N TO-92B TO-92B


    OCR Scan     		2N3859 2N3860 2N3900 2N3901 2N3903 2N3904 2N3905 2N3906 2N3946 2N3947 2N5219 T0-92B 2N4286 2N4291 2N4289 PDF

    2N3859A

    Abstract: PN100
    Text: 2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base


    Original     		2N3859A 300mA. PN100 2N3859A PDF

    2N3859A

    Abstract: No abstract text available
    Text: J*i L J I S 1 IméF * Discrete POW ER & Signal Technologies * I www»pw# SEMICONDUCTOR 2N3859A NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.


    OCR Scan     		2N3859A PN100 2N3859A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3859A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)18 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3859A Freq90M PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n2222 to-92

    Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
    Text: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135


    OCR Scan     		bSD1130 0D37772 MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 2n2222 to-92 2N4970 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219 PDF

    bc856 to 92

    Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
    Text: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ


    OCR Scan     		BC546 BC846 O-236* 2N4036 8C556 T0-92 BC856 TN4036 bc856 to 92 bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 2N3859A NATIONAL SEMICONDUCTOR T0-237 PDF

    n3860

    Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


    OCR Scan     		2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292 PDF

    2N3563

    Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
    Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15


    OCR Scan     		D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 PDF

    SC141 triac

    Abstract: SC142 DIAC st4 st4 diac SC151 SC1418 DIAC st2 SC1418* TRIAC triac SC140 DIAC GE ST2
    Text: Bi-Directional Triode Thyristor Power Pac Triacs 6 A to 15 A R M S U p t o 6 0 0 V o lts Is o la te d a n d N o n -Is o la te d T a b A triac is a solid state silicon AC switch which may be gate triggered from an OFF-State to an ON-State for either polarity of applied voltage.


    OCR Scan     		SC136 2N4992 SC141 triac SC142 DIAC st4 st4 diac SC151 SC1418 DIAC st2 SC1418* TRIAC triac SC140 DIAC GE ST2 PDF

    2N2999

    Abstract: No abstract text available
    Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D -7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)


    OCR Scan     		O-111/TO-59 0to10A 2n2892 2n2893 2n3859 n3748 2n3749 2n3750 2n3751 2n3752 2N2999 PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N3565

    Abstract: 2N3692
    Text: Low Level and General Purpose Amplifiers TY PE POLA ­ NO. RITY CASE M A XIM UM RATINGS HFE Pd IC VCEO mW (mA) 00 min max (T Cob N.F. IC VCE V CE(sat) max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 120+ 12 12 12 10 10 - 120+ 120+ 120+ 120+ - 10


    OCR Scan     		2N2924 2N2925 2N2926 2N3390 2N3391 2N3391A 2N3392 2N3393 2N3394 2N3395 2N3565 2N3692 PDF

    2N2999

    Abstract: 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853
    Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D-7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)


    OCR Scan     		O-111/TO-59 0to10A 2n2892 2N2893 2N3859 2N3748 2N3749 2N3750 2N3751 2N3752 2N2999 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF